公开(公告)号：US08183610B2

公开(公告)日：2012-05-22

申请号：US12549163

申请日：2009-08-27

申请人： Yoshinori Kumura

发明人： Yoshinori Kumura

IPC分类号： H01L27/115

CPC分类号： H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a nonvolatile memory including: a cell transistor including: a gate electrode and first and second diffusion layers; a second insulating film covering the cell transistor; first and second plugs penetrating the second insulating film to reach the first and second diffusion layers, respectively; a ferroelectric capacitor having a ferroelectric film and first and second electrodes, the first electrode contacting with the first plug; a first conductive spacer contacting with the second plug and including the same material as the first electrode; a third insulating film covering side faces of the first electrode, the ferroelectric film and the first conductive spacer; and a first wiring that is continuously formed with the second electrode and connected to the first conductive spacer and that includes the same material as the second electrode.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性存储器，包括：单元晶体管，包括：栅极电极和第一和第二扩散层; 覆盖单元晶体管的第二绝缘膜; 分别穿过第二绝缘膜的第一和第二插塞到达第一和第二扩散层; 具有铁电体膜的铁电电容器和第一和第二电极，所述第一电极与所述第一插塞接触; 与所述第二插头接触并且包括与所述第一电极相同的材料的第一导电间隔件; 覆盖第一电极，铁电体膜和第一导电间隔物的侧面的第三绝缘膜; 以及第一布线，其与第二电极连续地形成并且连接到第一导电间隔物并且包括与第二电极相同的材料。

公开(公告)号：US20100129938A1

公开(公告)日：2010-05-27

申请号：US12692712

申请日：2010-01-25

申请人： Yoshinori Kumura ,  Yoshiro Shimojo

发明人： Yoshinori Kumura ,  Yoshiro Shimojo

IPC分类号： H01L21/77

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55

摘要： A semiconductor device includes: a semiconductor substrate and a transistor formed on the semiconductor substrate. The semiconductor device also includes: a first interlayer insulation film formed on the semiconductor substrate including the upper portion of the transistor, a first contact formed to be connected through the first interlayer insulation film to the transistor, a ferroelectric capacitor formed to be connected to the first contact, a second interlayer insulation film formed on the first interlayer insulation film, and a second contact formed to connect the ferroelectric capacitor to a wiring through the second interlayer insulation film. The contact surfaces between the second contact and the ferroelectric capacitor have the same planar shape.

摘要翻译： 半导体器件包括：半导体衬底和形成在半导体衬底上的晶体管。 半导体器件还包括：形成在包括晶体管的上部的半导体衬底上的第一层间绝缘膜，形成为通过第一层间绝缘膜连接到晶体管的第一接触，形成为连接到晶体管的铁电电容器 第一接触，形成在第一层间绝缘膜上的第二层间绝缘膜，以及形成为将铁电电容器连接到通过第二层间绝缘膜的布线的第二接触。 第二触点和铁电电容器之间的接触表面具有相同的平面形状。

公开(公告)号：US20060231876A1

公开(公告)日：2006-10-19

申请号：US11107750

申请日：2005-04-18

申请人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

发明人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

IPC分类号： H01L29/00

CPC分类号： H01L28/55 ,  H01L28/65

摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 perovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a side wall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or more.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底和电容器，其设置在半导体衬底之上并且被构造为使得电介质膜夹在下电极和上电极之间，电介质膜由 包含作为A位元素的Pb，Ba和Sr中的至少一种和Zr，Ti，Ta，Nb，Mg，W，Fe中的至少一种的ABO 3钙钛矿型氧化物，和 Co作为B位元素，其中当从上方或膜厚方向观察时，电容器的侧壁的曲率半径为250 [nm]以下，并且具有半径为 曲率为{250 [nm] xpi / 6 [rad]}以上。

公开(公告)号：US20060022241A1

公开(公告)日：2006-02-02

申请号：US10958468

申请日：2004-10-06

申请人： Yoshiro Shimojo ,  Yoshinori Kumura ,  Iwao Kunishima

发明人： Yoshiro Shimojo ,  Yoshinori Kumura ,  Iwao Kunishima

IPC分类号： H01L29/94 ,  H01L21/8242

CPC分类号： G06K13/0875 ,  G06K7/0043 ,  G06K13/06 ,  G06K13/0887 ,  G06K13/0893 ,  H01L21/76831 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5223 ,  H01L27/10808 ,  H01L27/10888 ,  H01L27/11507 ,  H01L2924/0002 ,  H01L2924/00

摘要： A transistor is formed in a surface region of a semiconductor substrate. A capacitor is formed above the transistor, and has a first electrode, a second electrode, and a dielectric film formed between the first and second electrodes. A first contact is formed on a side surface portion of the capacitor so as to be close to at least a portion of the capacitor, and connected to one of source/drain regions. A side insulating film is formed, in contact with at least the capacitor, on the sidewalls of the first contact.

摘要翻译： 晶体管形成在半导体衬底的表面区域中。 在晶体管的上方形成电容器，并具有形成在第一和第二电极之间的第一电极，第二电极和电介质膜。 第一触点形成在电容器的侧表面部分上，以便接近电容器的至少一部分，并且连接到源/漏区之一。 在第一触点的侧壁上形成与至少电容器接触的侧绝缘膜。

公开(公告)号：US06967367B2

公开(公告)日：2005-11-22

申请号：US10805208

申请日：2004-03-22

申请人： Yoshinori Kumura ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Iwao Kunishima

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/65

摘要： A ferro-electric memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate, and a first ferro-electric capacitor electrically connected to the first transistor and formed of a first capacitor material layer having a first lower electrode, a first ferro-electric film, and a first upper electrode, the first ferro-electric capacitor being thicker at its central portion than at its ends.

摘要翻译： 铁电存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管和与第一晶体管电连接并由第一电容器材料层形成的第一铁电电容器，第一电容器材料层具有第一下电极，第一铁 第一上电极和第一上电极，其第一铁电电容器的中央部比其端部厚。

公开(公告)号：US09691457B2

公开(公告)日：2017-06-27

申请号：US14981627

申请日：2015-12-28

申请人： Yoshinori Kumura

发明人： Yoshinori Kumura

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC分类号： G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetic memory device includes a magnetoresistive effect element, and a first layer provided on the magnetoresistive effect element, wherein the first layer includes an upper conductive layer, and a predetermined metal containing conductive layer provided between the magnetoresistive effect element and the upper conductive layer and containing a predetermined metal selected from Pt, Ir, Pd and Au.

公开(公告)号：US20140284737A1

公开(公告)日：2014-09-25

申请号：US14018215

申请日：2013-09-04

申请人： Yoshinori Kumura

发明人： Yoshinori Kumura

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/08 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/228 ,  H01L27/2472 ,  H01L43/02 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a contact plug provided on the substrate. The contact plug includes a first contact plug, and a second contact plug provided on the first contact plug and having a smaller diameter than that of the first contact plug. The magnetic memory further includes a magnetoresistive element provided on the second contact plug. The diameter of the second contact plug is smaller than that of the magnetoresistive element.

摘要翻译： 根据一个实施例，公开了一种磁存储器。 磁性存储器包括衬底和设置在衬底上的接触插塞。 所述接触插塞包括第一接触插塞和设置在所述第一接触插塞上并且具有比所述第一接触插塞小的直径的第二接触插塞。 磁存储器还包括设置在第二接触插塞上的磁阻元件。 第二接触插塞的直径小于磁阻元件的直径。

公开(公告)号：US07504680B2

公开(公告)日：2009-03-17

申请号：US11107750

申请日：2005-04-18

申请人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

发明人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L28/55 ,  H01L28/65

摘要： A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 perovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a sidewall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or less.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底和电容器，其设置在半导体衬底之上并且被构造为使得电介质膜夹在下电极和上电极之间，电介质膜由 包含作为A位元素的Pb，Ba和Sr中的至少一种和作为B位元素的Zr，Ti，Ta，Nb，Mg，W，Fe和Co中的至少一种的ABO 3钙钛矿型氧化物， 其中，当从上方或者膜厚方向观察时，电容器的侧壁的曲率半径为250 [nm]以下，曲率半径的弧长为{250 [nm]×ppi / 6 [rad]}以下。

公开(公告)号：US20050205919A1

公开(公告)日：2005-09-22

申请号：US10930803

申请日：2004-09-01

申请人： Toru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo

发明人： Toru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo

IPC分类号： H01L27/105 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/115 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A ferro-electric memory device includes a first ferro-electric capacitor which is selectively formed on a first insulating film and has a first lower electrode, a first ferro-electric film, and a first upper electrode, a first hydrogen barrier film which has first to third portions, the first portion being formed on the first insulating film, the second portion covering the side surfaces of the first lower electrode, first ferro-electric film, and first upper electrode, and the third portion being formed on the upper surface of the first upper electrode, a first interlayer formed on the second portion, and a second hydrogen barrier film which has fourth to sixth portions, the fourth portion having a first contact portion which comes into contact with at least part of the first portion, the fifth portion being formed on the first interlayer, and the sixth portion being formed on the third portion.

摘要翻译： 铁电存储器件包括：第一铁电电容器，其选择性地形成在第一绝缘膜上并具有第一下电极，第一铁电膜和第一上电极;第一氢阻挡膜，其具有第一 至第三部分，第一部分形成在第一绝缘膜上，第二部分覆盖第一下电极，第一铁电膜和第一上电极的侧表面，第三部分形成在第一绝缘膜的上表面上 所述第一上电极，形成在所述第二部分上的第一中间层和具有第四至第六部分的第二氢阻挡膜，所述第四部分具有与所述第一部分的至少一部分接触的第一接触部分， 部分形成在第一中间层上，第六部分形成在第三部分上。

公开(公告)号：US20050167716A1

公开(公告)日：2005-08-04

申请号：US10805208

申请日：2004-03-22

申请人： Yoshinori Kumura ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Iwao Kunishima

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/65

摘要： A ferro-electric memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate, and a first ferro-electric capacitor electrically connected to the first transistor and formed of a first capacitor material layer having a first lower electrode, a first ferro- electric film, and a first upper electrode, the first ferro-electric capacitor being thicker at its central portion than at its ends.

摘要翻译： 铁电存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管和与第一晶体管电连接并由第一电容器材料层形成的第一铁电电容器，第一电容器材料层具有第一下电极，第一铁 - 电膜和第一上电极，所述第一铁电电容器在其中心部分比在其端部处更厚。