公开(公告)号：US20080063257A1

公开(公告)日：2008-03-13

申请号：US11931693

申请日：2007-10-31

申请人： Takashi HIROI ,  Masahiro Watanabe ,  Chie Shishido ,  Aritoshi Sugimoto ,  Maki Tanaka ,  Hiroshi Miyai ,  Asahiro Kuni ,  Yasuhiko Nara

发明人： Takashi HIROI ,  Masahiro Watanabe ,  Chie Shishido ,  Aritoshi Sugimoto ,  Maki Tanaka ,  Hiroshi Miyai ,  Asahiro Kuni ,  Yasuhiko Nara

IPC分类号： G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/956 ,  G01N2021/8854 ,  G01N2021/8861 ,  G01N2021/8864 ,  G01R31/311 ,  G03F1/86 ,  G06T1/0007 ,  G06T7/0002 ,  G06T7/001 ,  G06T2200/24 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/28

摘要： An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.

摘要翻译： 一种用于处理缺陷候选图像的装置，包括：用于拍摄样本的放大图像的成像器; 图像处理器，用于处理由成像器拍摄的图像以检测存在于样本上的缺陷候选，并将检测到的缺陷候选分类为多个缺陷类别中的一个; 存储器，用于存储包括缺陷候选图像和从图像处理器输出的分类缺陷类别数据的缺陷候选的信息; 以及显示单元，具有用于显示存储在存储器中的信息的显示屏幕，其中所述显示单元与存储在存储器中的缺陷类别数据一起显示缺陷候选的图像，并且显示的缺陷类别数据可在显示屏幕上变化， 并且存储器将存储的缺陷候选的缺陷类别数据改变为改变的缺陷类别数据。

公开(公告)号：US07026830B2

公开(公告)日：2006-04-11

申请号：US10379555

申请日：2003-03-06

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305 ,  G01R31/28

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.

摘要翻译： 使绝缘材料的图案能够在线检查。 通过抗蚀剂膜形成图案的图案化晶片40与SEM 3相对地放置在图案化晶片检查装置1的样本台21上。 从电子枪11发射大电流的电子束10，以高扫描速度扫描图案化晶片的图案一次。 通过二次电子检测器16检测来自图案化晶片的该扫描产生的二次电子，从而获得电子束图像。 使用该电子束图像，通过算术运算单元32和缺陷判定单元33对图案化晶片进行比较检查。由于可以通过仅扫描电子束一次来获得高对比度的电子束图像，因此图案化晶片 使用SEM的检查方法可以在IC制造方法中实现。

公开(公告)号：US20060043982A1

公开(公告)日：2006-03-02

申请号：US11269617

申请日：2005-11-09

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US20050041836A1

公开(公告)日：2005-02-24

申请号：US10841814

申请日：2004-05-10

申请人： Kazuo Takeda ,  Aritoshi Sugimoto ,  Takanori Ninomiya

发明人： Kazuo Takeda ,  Aritoshi Sugimoto ,  Takanori Ninomiya

IPC分类号： G06K7/10 ,  G06K17/00 ,  G06K19/06 ,  G06K19/073 ,  G06K19/14 ,  H01L23/544 ,  G06K9/00

CPC分类号： G06K19/07372 ,  G06K7/10544 ,  G06K19/06037 ,  G06K19/073 ,  G06K19/14 ,  H01L23/544 ,  H01L24/48 ,  H01L2223/54413 ,  H01L2223/5444 ,  H01L2223/5448 ,  H01L2223/54493 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor substrate has a peculiar crystal defect. Crystal defects in a fixed area of a substrate can be treated as data acquired by coding the distribution of the crystal defects. The coded data is utilized for certificate data of an IC card by identifying a semiconductor substrate itself.

摘要翻译： 半导体衬底具有特殊的晶体缺陷。 可以将衬底的固定区域中的晶体缺陷视为通过编码晶体缺陷的分布而获得的数据。 通过识别半导体衬底本身，将编码数据用于IC卡的证书数据。

公开(公告)号：US06573546B2

公开(公告)日：2003-06-03

申请号：US09922673

申请日：2001-08-07

申请人： Kiyonori Ohyu ,  Makoto Ohkura ,  Aritoshi Sugimoto ,  Yoshitaka Tadaki ,  Makoto Ogasawara ,  Masashi Horiguchi ,  Norio Hasegawa ,  Shinichi Fukada

发明人： Kiyonori Ohyu ,  Makoto Ohkura ,  Aritoshi Sugimoto ,  Yoshitaka Tadaki ,  Makoto Ogasawara ,  Masashi Horiguchi ,  Norio Hasegawa ,  Shinichi Fukada

IPC分类号： H01L27108

CPC分类号： H01L27/10897 ,  H01L27/10814 ,  H01L27/10894

摘要： A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the depletion layer of the sources and drains (n-type semiconductor regions) of the relief cells is widened to weaken the junction field.

公开(公告)号：US06559663B2

公开(公告)日：2003-05-06

申请号：US09983703

申请日：2001-10-25

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束的同时，在从照射电子束的时刻起经过规定时间后，照射电子束的部位检测到二次带电粒子，根据这样检测出形成图像 通过使用如此形成的图像来检查次级带电粒子信号和待检查的部分。

公开(公告)号：US06376854B2

公开(公告)日：2002-04-23

申请号：US09848422

申请日：2001-05-04

申请人： Chie Shishido ,  Takashi Hiroi ,  Haruo Yoda ,  Masahiro Watanabe ,  Asahiro Kuni ,  Maki Tanaka ,  Takanori Ninomiya ,  Hideaki Doi ,  Shunji Maeda ,  Mari Nozoe ,  Hiroyuki Shinoda ,  Atsuko Takafuji ,  Aritoshi Sugimoto ,  Yasutsugu Usami

发明人： Chie Shishido ,  Takashi Hiroi ,  Haruo Yoda ,  Masahiro Watanabe ,  Asahiro Kuni ,  Maki Tanaka ,  Takanori Ninomiya ,  Hideaki Doi ,  Shunji Maeda ,  Mari Nozoe ,  Hiroyuki Shinoda ,  Atsuko Takafuji ,  Aritoshi Sugimoto ,  Yasutsugu Usami

IPC分类号： G01N2188

CPC分类号： G01N21/95607

摘要： A method for inspecting a pattern formed on a substrate, includes the steps of moving a table along a first direction on which a substrate to be inspected is mounted, irradiating a converged electron beam on the substrate by scanning the converged electron beam along a second direction which is perpendicular to the first direction; detecting an electron radiated from the substrate by the irradiation of the converged electron beam in which the movement of the table and the scanning of the converged electron beam are synchronized; forming a digital image of the substrate from the detected electron; improving a quality of the digital image by filtering the digital image; and detecting a defect of a pattern formed on the substrate by using the improved quality digital image.

摘要翻译： 一种用于检查形成在基板上的图案的方法，包括以下步骤：沿着安装有待检查的基板的第一方向移动工作台，通过沿第二方向扫描会聚的电子束将会聚的电子束照射在基板上 其垂直于第一方向; 通过会聚电子束的照射来检测从基板辐射的电子，其中台的移动和会聚电子束的扫描同步; 从检测到的电子形成衬底的数字图像; 通过过滤数字图像来提高数字图像的质量; 以及通过使用改进的质量数字图像来检测在基板上形成的图案的缺陷。

公开(公告)号：US06365425B1

公开(公告)日：2002-04-02

申请号：US09604251

申请日：2000-06-27

申请人： Masami Ikota ,  Aritoshi Sugimoto ,  Hisato Nakamura

发明人： Masami Ikota ,  Aritoshi Sugimoto ,  Hisato Nakamura

IPC分类号： H01L2166

CPC分类号： G01N21/95607 ,  G01N21/9501

摘要： A method of manufacturing a semiconductor device includes fetching inspection chip information including information of a dust-particle/fault on an inspection chip by irradiating the inspection chip of a semiconductor wafer with an optical beam and by detecting the scattering/diffracting beam of the optical beam, fetching reference chip information as information of a reference chip without a dust-particle/fault, comparing the inspection chip information and the reference chip information to determine a dust-particle/fault, and determining whether the dust-particle/fault is located on a pattern or outside of the pattern by matching between the dust-particle/fault information and design pattern data as data of a prepared pattern. The dust-particle/fault is determined to be a fatal dust-particle/fault when the dust-particle fault is located on the pattern or to be a non-fatal dust-particle fault when the dust-particle/fault is located outside of the pattern.

摘要翻译： 半导体装置的制造方法包括通过用光束照射半导体晶片的检查芯片，并通过检测光束的散射/衍射光束来检测包括检查芯片上的尘埃/故障的信息的检查芯片信息 将参考芯片信息作为没有灰尘/故障的参考芯片的信息获取，比较检查芯片信息和参考芯片信息以确定灰尘/故障，并确定灰尘/故障是否位于 通过将灰尘/故障信息与设计图案数据之间的匹配作为准备的图案的数据来匹配图案或图案之外的图案。 尘埃粒子/故障位于模式之外时，灰尘/故障被确定为致命的灰尘/故障，或者当灰尘/故障位于外部时，是非致命的灰尘 - 颗粒故障 模式。

公开(公告)号：US06329826B1

公开(公告)日：2001-12-11

申请号：US09525341

申请日：2000-03-14

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。