公开(公告)号：US20110012495A1

公开(公告)日：2011-01-20

申请号：US12837914

申请日：2010-07-16

申请人： Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

发明人： Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

IPC分类号： H01J61/52 ,  H01J33/04

CPC分类号： G21K5/00 ,  H01J5/18 ,  H01J33/04 ,  H01J2237/164 ,  Y10T156/10

摘要： An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.

摘要翻译： 出口窗口可以包括出口窗口箔片和支撑出口窗口箔片的支撑格栅。 支撑格栅可以具有第一和第二格栅，每个栅格具有相互对准的第一和第二格栅部分，并且彼此热隔离。 第一和第二格栅部分可以各自具有一系列孔，其被对准以允许梁通过其到达并通过出射窗箔。 第二格栅部分可以接触出口窗箔。 第一格栅部分可以掩蔽第二格栅部分和出射窗箔，以防止由射束撞击第一格栅部分引起的热量。

公开(公告)号：US20100155026A1

公开(公告)日：2010-06-24

申请号：US12339235

申请日：2008-12-19

申请人： Steven R. Walther

发明人： Steven R. Walther

IPC分类号： F28D15/00

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/002 ,  H01J2237/2001

摘要： A workpiece cooling system and method are disclosed. Transferring heat away from a workpiece, such as a semiconductor wafer during ion implantation, is essential. Typically this heat is transferred to the workpiece support, or platen. In one embodiment, the desired operating temperature is determined. Based on this, a gas having a vapor pressure within a desired range, such as 10-50 torr, is selected. This range is required to be sufficiently low so as to be less than the clamping force. This condensible gas is used to fill the volume between the workpiece and the workpiece support. Heat transfer occurs based on adsorption and desorption, thereby offering improved transfer properties than traditionally employed gases, such as helium, hydrogen, nitrogen, argon and air.

摘要翻译： 公开了一种工件冷却系统和方法。 在离子注入期间将热量从工件（例如半导体晶片）传出是至关重要的。 通常，这种热量传递到工件支撑件或压板。 在一个实施例中，确定期望的操作温度。 基于此，选择蒸气压在所需范围内的气体，例如10-50乇。 该范围要求足够低以便小于夹紧力。 该可冷凝气体用于填充工件和工件支架之间的体积。 基于吸附和解吸发生热传递，从而提供比传统使用的气体（例如氦气，氢气，氮气，氩气和空气）更好的转移性能。

公开(公告)号：US07615748B2

公开(公告)日：2009-11-10

申请号：US11860696

申请日：2007-09-25

申请人： Steven R. Walther ,  Harold M. Persing

发明人： Steven R. Walther ,  Harold M. Persing

IPC分类号： G01J5/10

CPC分类号： H01L21/67253

摘要： A workpiece processing system includes a platen configured to support a workpiece, a source configured to provide an electromagnetic wave proximate a front surface of the workpiece, and a detector. The detector is configured to receive at least a portion of the electromagnetic wave and provide a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts. A method of detecting an outgassing rate is also provided. The method includes providing an electromagnetic wave proximate a front surface of a workpiece, receiving at least a portion of the electromagnetic wave, and providing a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts.

摘要翻译： 工件处理系统包括被配置为支撑工件的压板，被配置为提供靠近工件前表面的电磁波的源和检测器。 检测器被配置为接收电磁波的至少一部分并且提供表示来自除气副产物的工件的除气速率的检测信号。 还提供了一种检测排气速率的方法。 该方法包括在工件的前表面附近提供电磁波，接收电磁波的至少一部分，以及提供代表来自除气副产物的工件的除气速率的检测信号。

公开(公告)号：US20080076194A1

公开(公告)日：2008-03-27

申请号：US11525878

申请日：2006-09-23

申请人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

发明人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

IPC分类号： H01L21/425

CPC分类号： H01J37/3171 ,  H01J2237/2001

摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

公开(公告)号：US20080067434A1

公开(公告)日：2008-03-20

申请号：US11441633

申请日：2006-05-26

申请人： Steven R. Walther ,  Sandeep Mehta

发明人： Steven R. Walther ,  Sandeep Mehta

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/3026 ,  H01J37/3172 ,  H01J2237/30461 ,  H01J2237/30472 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/3171

摘要： A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

摘要翻译： 一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制 离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。 光束可以是扫描光束或带状光束。 还提供了离子注入机。

公开(公告)号：US20070200075A1

公开(公告)日：2007-08-30

申请号：US11361765

申请日：2006-02-24

申请人： Steven R. Walther ,  Morgan Evans

发明人： Steven R. Walther ,  Morgan Evans

IPC分类号： H01J37/317

CPC分类号： H01J37/026 ,  H01J2237/0044 ,  H01J2237/31703

摘要： An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.

摘要翻译： 离子束监测系统包括电荷中和系统和传感器。 电荷中和系统被配置为提供补偿电流以控制晶片前表面上的电荷。 传感器被配置为感测补偿电流并且响应于补偿电流提供传感器信号，其中传感器信号代表离子束的束电流。 电荷中和系统可以包括配置成向离子束提供补偿电流的等离子体喷射枪。

公开(公告)号：US06716727B2

公开(公告)日：2004-04-06

申请号：US10007530

申请日：2001-10-26

申请人： Steven R. Walther

发明人： Steven R. Walther

IPC分类号： H01L21425

CPC分类号： H01J37/32412 ,  H01J37/3171 ,  H01L21/2236 ,  H01L21/26513

摘要： Methods and apparatus are provided for plasma doping and ion implantation in an integrated processing system. The apparatus includes a process chamber, a beamline ion implant module for generating an ion beam and directing the ion beam into the process chamber, a plasma doping module including a plasma doping chamber that is accessible from the process chamber, and a wafer positioner. The positioner positions a semiconductor wafer in the path of the ion beam in a beamline implant mode and positions the semiconductor wafer in the plasma doping chamber in a plasma doping mode.

摘要翻译： 在集成处理系统中提供等离子体掺杂和离子注入的方法和装置。 该装置包括处理室，用于产生离子束并将离子束引入处理室的束线离子注入模块，包括可从处理室接近的等离子体掺杂室的等离子体掺杂模块和晶片定位器。 定位器将半导体晶片以束线注入模式定位在离子束的路径中，并且以等离子体掺杂模式将半导体晶片定位在等离子体掺杂室中。

公开(公告)号：US06686598B1

公开(公告)日：2004-02-03

申请号：US09653505

申请日：2000-09-01

申请人： Steven R. Walther

发明人： Steven R. Walther

IPC分类号： H01J3720

CPC分类号： H01L21/68721

摘要： The invention provides a wafer clamping apparatus and method for use in semiconductor processing. The apparatus includes a clamping component that holds a backside of the wafer to a supporting surface and cools the wafer to prevent overheating. The clamping component is a chemical compound, such as H2O, that covers at least a section of the supporting surface and can adhere the backside of the wafer to the supporting surface. The component undergoes one or more phase-changes (e.g., liquid to solid, solid to liquid, etc.) to facilitate various operations throughout the process. The phase-changes ensure that the wafer may be easily loaded onto and released from the supporting structure at the beginning and end of the process, respectively, while being securely held and cooled during the process. The wafer clamp is suitable for use in a number of semiconductor processes, including ion implantation, and is particularly useful in processes that require wafer cooling such as ion implantation processes that have high implant energies, long implant times, high implant doses, or combinations thereof.

摘要翻译： 本发明提供一种用于半导体处理的晶片夹紧装置和方法。 该装置包括夹持部件，该夹紧部件将晶片的背面保持在支撑表面上并冷却晶片以防止过热。 夹紧部件是覆盖支撑表面的至少一部分的化合物，例如H 2 O，并且可以将晶片的背面粘附到支撑表面。 组分经历一个或多个相变（例如，液体至固体，固体与液体等），以促进整个过程中的各种操作。 相位改变确保了晶片可以在工艺开始和结束时分别容易地负载到支撑结构上并从支撑结构释放，同时在该过程中被牢固地保持和冷却。 晶片夹适用于许多半导体工艺，包括离子注入，并且特别适用于需要晶片冷却的工艺，例如具有高注入能量，长注入时间，高注入剂量或其组合的离子注入工艺 。

公开(公告)号：US5198677A

公开(公告)日：1993-03-30

申请号：US774912

申请日：1991-10-11

申请人： Ka-Ngo Leung ,  Wulf B. Kunkel ,  Steven R. Walther

发明人： Ka-Ngo Leung ,  Wulf B. Kunkel ,  Steven R. Walther

IPC分类号： H01J27/14

CPC分类号： H01J27/14 ,  H01J2237/08 ,  H01J2237/31701

摘要： A method of generating a high purity (at least 98%) N.sup.+ ion beam using a multicusp ion source (10) having a chamber (11) formed by a cylindrical chamber wall (12) surrounded by a plurality of magnets (13), a filament (57) centrally disposed in said chamber, a plasma electrode (36) having an extraction orifice (41) at one end of the chamber, a magnetic filter having two parallel magnets (21, 22) spaced from said plasma electrode (36) and dividing the chamber (11) into arc discharge and extraction regions. The method includes ionizing nitrogen gas in the arc discharge region of the chamber (11), maintaining the chamber wall (12) at a positive voltage relative to the filament (57) and at a magnitude for an optimum percentage of N.sup.+ ions in the extracted ion beams, disposing a hot liner (45) within the chamber and near the chamber wall (12) to limit recombination of N.sup.+ ions into the N.sub.2.sup.+ ions, spacing the magnets (21, 22) of the magnetic filter from each other for optimum percentage of N.sup.3 ions in the extracted ion beams, and maintaining a relatively low pressure downstream of the extraction orifice and of a magnitude (preferably within the range of 3-8.times.10.sup.-4 torr) for an optimum percentage of N.sup.+ ions in the extracted ion beam.

摘要翻译： 使用具有由多个磁体（13）包围的圆柱形室壁（12）形成的室（11）的多重离子源（10）产生高纯度（至少98％）的N +离子束的方法， 中心设置在所述室中的灯丝（57），具有在所述室的一端处的提取孔（41）的等离子体电极（36），具有与所述等离子体电极（36）间隔开的两个平行磁体（21,22）的磁性过滤器， 并将室（11）分割成电弧放电和提取区域。 该方法包括在室（11）的电弧放电区域中离子化氮气，将室壁（12）保持在相对于灯丝（57）的正电压并且处于提取的N +离子的最佳百分比的量级 离子束，在室内和室壁附近设置热衬里（45）以限制N +离子复合到N 2 +离子中，使磁性过滤器的磁体（21,22）彼此间隔，以获得最佳百分比 在提取的离子束中保持N 3离子，并且在提取孔的下游保持相对较低的压力，并且在提取的离子束中的N +离子的最佳百分比（优选在3-8×10 -4乇的范围内）。