公开(公告)号：US08388202B2

公开(公告)日：2013-03-05

申请号：US12901486

申请日：2010-10-08

申请人： Masafumi Ohno ,  Ryotaro Owada ,  Norikatsu Myojin ,  Mitsuo Yamada ,  Yasushi Kita ,  Satoshi Sakai

发明人： Masafumi Ohno ,  Ryotaro Owada ,  Norikatsu Myojin ,  Mitsuo Yamada ,  Yasushi Kita ,  Satoshi Sakai

IPC分类号： F21V5/00 ,  F21V7/00

CPC分类号： F21S41/24 ,  F21S41/125 ,  F21S41/143 ,  F21S41/147 ,  F21S41/155 ,  F21V7/0091 ,  F21Y2115/10

摘要： A vehicle light can include an optical system for controlling a light distribution pattern, and the optical system is a light guide (being a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low bean light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line. Among the light beams, perpendicularly incident light beams not subjected to refraction can be projected toward the bright-dark boundary line while obliquely incident light beams being subjected to refraction can be corrected to be directed in a lower angular direction than the bright-dark boundary line to be mixed with the other light beams emitted from other light emitting points of the LED light source, thereby preventing the color shading of illumination light.

摘要翻译： 车灯可以包括用于控制配光图案的光学系统，并且光学系统是光导（是具有内部反射面的透镜体）。 车灯可以投射具有低光分布图案的照明光。 车辆灯可以包括LED光源和用作光导的透镜体。 透镜体可以包括光入射表面，反射表面和光出射表面。 LED光源可以具有最后端发光点，光束从该发光点发射以形成明暗的边界线。 在这些光束中，不会受到折射的垂直入射光束可以投射到明暗边界线上，而被折射的倾斜入射光束可以被校正为比明暗边界线更低的角度方向 与从LED光源的其他发光点发射的其他光束混合，从而防止照明光的着色。

公开(公告)号：US20130049156A1

公开(公告)日：2013-02-28

申请号：US13547452

申请日：2012-07-12

申请人： Tomoyasu FURUKAWA ,  Satoshi Sakai ,  Yusuke Nonaka ,  Shinya Sugino

发明人： Tomoyasu FURUKAWA ,  Satoshi Sakai ,  Yusuke Nonaka ,  Shinya Sugino

IPC分类号： H01L31/12

CPC分类号： H01L27/14689 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14645

摘要： In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.

摘要翻译： 在弱内部电场的区域中，在比光电二极管更深的区域产生的光电荷被横向扩散，从而通过流入相邻像素的光电子等（串扰）降低灵敏度。 在光电二极管形成部分中，在像素区域和外围电路区域之间设置抗串扰层。 像素与像素之间或像素区域与外围电路区域之间的串扰减小，以提高光敏性。

公开(公告)号：US20120135561A1

公开(公告)日：2012-05-31

申请号：US13388297

申请日：2010-05-07

申请人： Hiroomi Miyahara ,  Saneyuki Goya ,  Satoshi Sakai ,  Tatsuyuki Nishimiya

发明人： Hiroomi Miyahara ,  Saneyuki Goya ,  Satoshi Sakai ,  Tatsuyuki Nishimiya

IPC分类号： H01L31/18

CPC分类号： C23C16/24 ,  C23C16/4402 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.

摘要翻译： 目的在于获得在光电转换层中具有晶体硅i层的高效光电转换元件。 公开了一种光电转换装置的制造方法，其包括在基板上形成具有主要由晶体硅形成的i层的光电转换层的步骤。 该方法包括根据i层的拉曼比确定i层中的杂质浓度的上限的步骤; 并且形成i层，使其具有等于或小于确定的杂质浓度的上限的值。 或者，根据i层的拉曼比来确定成膜气氛中的杂质浓度的上限，同时在控制杂质 - 气体浓度的同时形成i层，使其具有相等的值 达到或小于确定的上限。

公开(公告)号：US20110241486A1

公开(公告)日：2011-10-06

申请号：US13065892

申请日：2011-03-31

申请人： Akihiro Iino ,  Yukio Akiyama ,  Satoshi Sakai ,  Takuo Oosaki ,  Masakazu Hirabayashi ,  Masatomo Moriko

发明人： Akihiro Iino ,  Yukio Akiyama ,  Satoshi Sakai ,  Takuo Oosaki ,  Masakazu Hirabayashi ,  Masatomo Moriko

IPC分类号： H02N2/12

CPC分类号： H02N2/12 ,  G04C3/12 ,  H02N2/166

摘要： An ultrasonic motor which exhibits stable performances by suppressing irregularities of magnitudes of two standing waves excited by a piezoelectric element is provided. The ultrasonic motor is provided with a piezoelectric element which includes: a plurality of divided electrodes which are mounted on one surface and are equidistantly arranged in the circumferential direction; an inner peripheral electrode which is arranged on an inner peripheral side of the divided electrodes; an outer peripheral electrode which is arranged on an outer peripheral side of the divided electrodes; a plurality of inner peripheral short-circuiting electrodes which are mounted on every other divided electrode out of the divided electrodes and on the inner peripheral electrode so as to make every other divided electrode short-circuited with the inner peripheral electrode in the radial direction of the piezoelectric element; a plurality of outer peripheral short-circuiting electrodes which are mounted on the divided electrodes which are not short-circuited with the inner peripheral electrodes out of the divided electrodes and on the outer peripheral electrode so as to make the divided electrodes which are not short-circuited with the inner peripheral electrode short-circuited with the outer peripheral electrode in the radial direction of the piezoelectric element.

摘要翻译： 提供了通过抑制由压电元件激发的两个驻波的大小的不规则性而表现出稳定的性能的超声波马达。 超声波马达设置有压电元件，该压电元件包括​​：多个分隔电极，其安装在一个表面上并沿圆周方向等距布置; 配置在分割电极的内周侧的内周电极; 外周电极，其设置在所述分割电极的外周侧; 多个内周短路电极，分别安装在分割电极之间的每隔一个分割电极和内周电极上，以使每隔一个分隔电极与内周电极沿径向方向短路 压电元件 多个外周短路电极，其安装在分割电极上，其与分隔电极之间的内周电极没有短路，并且在外周电极上，使得不短路的分割电极， 与外周电极在压电元件的径向方向上与外周电极短路的内周电极环绕。

公开(公告)号：US20110238364A1

公开(公告)日：2011-09-29

申请号：US13065668

申请日：2011-03-25

申请人： Satoshi Sakai ,  Kazuo Kato ,  Keisuke Tsubata ,  Yoshinori Sugai ,  Tomohiro Ihashi ,  Hisao Nakamura ,  Eriko Noguchi ,  Akira Takakura

发明人： Satoshi Sakai ,  Kazuo Kato ,  Keisuke Tsubata ,  Yoshinori Sugai ,  Tomohiro Ihashi ,  Hisao Nakamura ,  Eriko Noguchi ,  Akira Takakura

IPC分类号： G06F15/00

CPC分类号： G01C22/006

摘要： A calculation unit calculates a magnitude of acceleration in at least one of three separate directions and calculates a synthesized value indicating the magnitudes of the accelerations in the three directions based on the calculated magnitude of the acceleration and the acceleration in the direction separate from at least one of the directions.

摘要翻译： 计算单元计算三个独立方向中的至少一个方向的加速度的大小，并且基于计算出的加速度的大小和与至少一个方向分开的方向的加速度来计算指示三个方向上的加速度的大小的合成值 的方向。

公开(公告)号：US20110111551A1

公开(公告)日：2011-05-12

申请号：US13003936

申请日：2009-08-18

申请人： Kengo Yamaguchi ,  Satoshi Sakai ,  Yoshiaki Takeuchi

发明人： Kengo Yamaguchi ,  Satoshi Sakai ,  Yoshiaki Takeuchi

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0745 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.

摘要翻译： 提供一种通过快速形成具有良好覆盖率的n层实现高生产率和高转换效率的光电转换装置制造方法。 光电转换装置的制造方法包括通过等离子体CVD法在衬底上形成硅光电转换层的步骤。 在光电转换装置的制造方法中，形成光电转换层的步骤包括形成由晶体硅形成的i层的步骤，以及在i层上在条件下形成n层的步骤 氢稀释比为0至10（含）。

公开(公告)号：US20110037134A1

公开(公告)日：2011-02-17

申请号：US12842220

申请日：2010-07-23

申请人： Shinya SUGINO ,  Satoshi Sakai ,  Yusuke Nonaka ,  Tomohiro Saito ,  Tomoyasu Furukawa ,  Hiroyuki Hayashi

发明人： Shinya SUGINO ,  Satoshi Sakai ,  Yusuke Nonaka ,  Tomohiro Saito ,  Tomoyasu Furukawa ,  Hiroyuki Hayashi

IPC分类号： H01L31/0232 ,  H01L31/02

CPC分类号： H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.

摘要翻译： 在固态图像传感器装置中，通过布置布线配置来增强通过微透镜对光电二极管PD的光接收区域的光采集效率。 第一金属层和第二金属层中的每一个被布置成具有沿着光电二极管PD的光接收区域的轮廓形成的环状部分，其方式是光电二极管PD上的上部位置被第一 和第二金属层和第三金属层。

公开(公告)号：US20100177326A1

公开(公告)日：2010-07-15

申请号：US12517110

申请日：2007-10-31

申请人： Satoshi Sakai ,  Yoichiro Tsumura ,  Masami Iida ,  Kohei Kawazoe

发明人： Satoshi Sakai ,  Yoichiro Tsumura ,  Masami Iida ,  Kohei Kawazoe

IPC分类号： G01B11/06

CPC分类号： G01B11/06 ,  G01B11/0625 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： Objects are to reduce the burden on an operator and to improve fabrication efficiency. A transparent conductive film or a transparent optical film formed on a substrate W is irradiated with line illumination light by means of a line illumination device 3, line reflected light reflected at the transparent conductive film or the transparent optical film is detected with a camera, a color evaluation value of the detected reflected light is measured, and a film thickness corresponding to the measured color evaluation value is obtained using a film-thickness characteristic in which the color evaluation value is associated with the film thickness.

摘要翻译： 对象是减轻操作员的负担并提高制造效率。 利用线照明装置3照射在基板W上形成的透明导电膜或透明光学膜，利用照相机检测在透明导电膜或透明光学膜反射的线反射光， 测定检测出的反射光的颜色评价值，使用色彩评价值与膜厚相关联的膜厚特性，求出与测定色彩评价值对应的膜厚。

公开(公告)号：US20100093936A1

公开(公告)日：2010-04-15

申请号：US12520154

申请日：2007-12-19

申请人： Shyuji Kubota ,  Satoshi Sakai

发明人： Shyuji Kubota ,  Satoshi Sakai

IPC分类号： C08L77/00

CPC分类号： C08L77/00 ,  C08K3/013 ,  C08L23/26 ,  C08L51/06 ,  C08L2205/02 ,  E05B15/1635 ,  E05B17/0004 ,  E05C17/203 ,  C08L2666/20 ,  C08L2666/06 ,  C08L2666/02 ,  C08L2666/24

摘要： The invention provides a crystalline polyamide-type resin composition comprises (a) a crystalline polyamide resin composition comprising (i) 50 to 90% by weight of crystalline polyamide resin (A) having a relative viscosity in 96% sulfuric acid of not less than 3.5 and (ii) 50 to 10% by weight of a crystalline polyamide resin (B) having a melting point lower than the melting point of polyamide resin (A) by 20° C. or more and a relative viscosity dissolved in 96% sulfuric acid of not more than 3.6, and (b) 1 to 10 part(s) by weight of a modified polyolefin resin (C) having a reactive functional group being able to react with the terminal group and/or main-chain amide group of the polyamide resin. The invention also provides a door checker for automobiles prepared from the crystalline polyamide-type resin composition.

摘要翻译： 本发明提供一种结晶性聚酰胺型树脂组合物，其包含（a）结晶性聚酰胺树脂组合物，其包含（i）50〜90重量％的结晶性聚酰胺树脂（A），其相对粘度在96％以上的硫酸中不小于3.5 和（ii）50〜10重量％的熔点低于聚酰胺树脂（A）的熔点20℃以上的结晶性聚酰胺树脂（B）和溶解在96％硫酸中的相对粘度 为3.6以下，（b）1〜10重量份的具有反应性官能团的改性聚烯烃树脂（C）能够与末端基和/或主链酰胺基反应 聚酰胺树脂。 本发明还提供了一种由结晶聚酰胺型树脂组合物制备的汽车门检查器。

公开(公告)号：US07662696B2

公开(公告)日：2010-02-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。