公开(公告)号：US10858378B2

公开(公告)日：2020-12-08

申请号：US15779653

申请日：2016-12-16

Applicant: Dow Silicones Corporation

Inventor： Xiaobing Zhou

IPC: C07F7/10 ,  C07F7/20 ,  C07F7/02 ,  C07F7/08 ,  C23C16/34

Abstract: The present invention provides processes for preparing silanylamines, such as disilanylamines and polysilanylamines, and compositions comprising the silanylamines. In one embodiment, the present invention provides processes for preparing a silanylamine compound, the processes comprising reacting a starting compound of general formula RR1N—(SixH2x+1) with an amine compound of general formula R2R3NH to produce the silanylamine compound of general formula R2mR3n—N(SixH2+1)3-m-n.

公开(公告)号：US10831100B2

公开(公告)日：2020-11-10

申请号：US15817864

申请日：2017-11-20

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Emad Aqad ,  James W. Thackeray

IPC: G03F7/004 ,  C07D333/76 ,  C07C309/12 ,  C07C65/05 ,  C07C25/02 ,  G03F7/26 ,  C07C323/03 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  C07C323/09 ,  C07C381/12 ,  G03F7/32

Abstract: A photoacid generator compound having formula (I): wherein, in formula (I), groups and variables are the same as described in the specification.

公开(公告)号：US10821433B2

公开(公告)日：2020-11-03

申请号：US16164175

申请日：2018-10-18

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Andrey Rudenko ,  Gerhard Pohlers

IPC: B01J45/00 ,  B01J41/14 ,  C07C67/56 ,  C07C41/36 ,  B01J41/05 ,  B01J47/12 ,  B01J47/016

Abstract: An ion exchange resin comprises a crosslinked resin and a salt covalently bonded to a carbon of the resin, wherein the salt comprises a first non-metallic cation and a first counteranion, wherein the first counteranion comprises a second non-metallic cation and a thiosulfate counteranion, and wherein the ion exchange resin is essentially free of metals. The ion exchange resin finds particular use in the removal of impurities from solutions that are useful in the manufacture of semiconductor devices.

公开(公告)号：US10719014B2

公开(公告)日：2020-07-21

申请号：US13926764

申请日：2013-06-25

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Chunyi Wu ,  Gerhard Pohlers ,  Gregory P. Prokopowicz ,  Mingqi Li ,  Cheng-Bai Xu

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/20 ,  G03F7/039 ,  C08F220/52 ,  C07C233/16 ,  C07C233/02 ,  C08F220/56 ,  C07C233/00 ,  C07C233/01 ,  C08F220/58

Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

公开(公告)号：US10711360B2

公开(公告)日：2020-07-14

申请号：US15974787

申请日：2018-05-09

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Michael Lipschutz

IPC: C25D3/18 ,  C08G73/02 ,  C25D3/12

Abstract: Nickel electroplating compositions containing copolymers of arginine and a bisepoxide enable the electroplating of nickel deposits which have uniform bright surfaces over wide current density ranges.

公开(公告)号：US10590556B2

公开(公告)日：2020-03-17

申请号：US15752625

申请日：2015-10-08

Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： Weijing Lu ,  Lingli Duan ,  Zukhra Niazimbetova ,  Chen Chen ,  Maria Rzeznik

IPC: C25D3/38 ,  C25D3/58 ,  C08G73/02 ,  C25D3/56 ,  C23C18/16 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H05K3/42

Abstract: A polymer composed of a reaction product of an amine and a quinone. The quinone is a Michael addition receptor. The polymer may be an additive for a copper electroplating bath. The polymer may function as a leveler and enable the copper electroplating bath to have high throwing power and provide copper deposits with reduced nodules.

公开(公告)号：US10512174B2

公开(公告)日：2019-12-17

申请号：US15384678

申请日：2016-12-20

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Nagarajan Jayaraju ,  Leon Barstad

IPC: C25D5/02 ,  H05K3/42 ,  C23C18/16 ,  C23C18/38 ,  C25D3/38 ,  C25D5/56 ,  C25D7/12 ,  H05K1/09 ,  H05K1/11 ,  H05K3/00

Abstract: Direct current plating methods inhibit void formation, reduce dimples and eliminate nodules. The method involves electroplating copper at a high current density followed by electroplating at a lower current density to fill through-holes.

公开(公告)号：US10481494B1

公开(公告)日：2019-11-19

申请号：US14635553

申请日：2015-03-02

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Vipul Jain ,  Owendi Ongayi ,  Suzanne Coley ,  Anthony Zampini

IPC: G03F7/09 ,  G03F7/11 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a component that comprises one or more parabanic acid moieties. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

公开(公告)号：US10377848B2

公开(公告)日：2019-08-13

申请号：US15092636

申请日：2016-04-07

Applicant: Rohm and Haas Electronic Materials LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

Inventor： Seon-Hwa Han ,  Sung Wook Cho ,  Hae-Kwang Pyun ,  Jung-June Lee ,  Shintaro Yamada

IPC: C08G61/12 ,  C08G61/02 ,  G03F7/40 ,  G03F7/36 ,  G03F7/30 ,  G03F7/09 ,  G03F7/075 ,  G03F7/11 ,  C09D165/00

Abstract: Polymeric reaction products of certain aromatic alcohols with certain diaryl-substituted aliphatic alcohols are useful as underlayers in semiconductor manufacturing processes.

公开(公告)号：US10340144B2

公开(公告)日：2019-07-02

申请号：US15404675

申请日：2017-01-12

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies, LLC

Inventor： Rachel A. Segalman ,  Peter Trefonas, III ,  Bhooshan C. Popere ,  Andrew T. Heitsch

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/22 ,  C09D153/00 ,  H01L21/3105 ,  H01L29/167 ,  H01L29/207

Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.