Abstract:
The present invention provides a charged particle beam device which can effectively restrain misalignment of an optical axis even if a position of an anode is changed. The present invention is a charged particle beam device comprising a cathode provided with a charged particle source which emits a charged particle, an anode which applies an electric field to the emitted charged particle, a charged particle beam deflector which deflects an orbit of a charged particle beam having passed the anode, and a charged particle beam detector which detects the charged particle beam from a sample to which the charged particle is irradiated, wherein a distance changing mechanism which changes a distance between the cathode and the anode, corresponding to a charged particle amount emitted from the charged particle source and a deflection amount control mechanism which detects a condition of the deflector under which the charged particle dose detected from the sample scanned by deflecting the charged particle beam in the changed distance becomes a desired size and controls deflection of the deflector at sample measurement on the basis of the condition are provided.
Abstract:
As a method of manufacturing an electron emitter having a pair of element electrodes formed on a substrate, a conductive film connected to both of the element electrodes, and an electron emission section formed in part of the conductive film, the method includes discharging a droplet of a function liquid containing a material for forming the conductive film onto a discharge surface of the substrate by a droplet device to adhere a liquid-state object to at least part of an area in which the conductive film is to be formed, drying the liquid-state object so as to make the liquid-state object become the conductive film, and forming an electron emission section in the conductive film by applying an current between the pair of element electrodes, wherein if accompanied by the drying to form the conduct film, the discharging the liquid-state object in a shape having a constricted part for forming a latent image section that has a relatively thin film thickness in a portion for forming the electron emitter.
Abstract:
An electron beam source comprises a source surface illuminated with a photon beam of adjustable intensity. The photon beam assists emission of electrons from the source surface due to a photo effect. An electric extraction field further assists in electron emission. Further, a heater is provided for further assisting in electron emission by a thermionic effect. An electron beam current is measured, and the intensity of the photon beam is adjusted based on the measured electron beam current.
Abstract:
An S/N ratio of a probe current is measured while a filament current is changed, and the filament current in which the S/N ratio is maximal is determined.
Abstract:
A method for detecting electron beam filament wear in an electron beam source, the method comprising the steps of: enlarging a beam spot emanating from the electron beam source on a work table to a predetermined minimum size, capturing an image of the beam spot on the work table by a camera, comparing the captured image of the beam spot with a reference image, and detecting filament wear if the captured image is deviating more than a predetermined value from the reference image.
Abstract:
An ElectroMagnetic-Mechanical Pulser (“EMMP”) generates electron pulses at a continuously tunable rate between 100 MHz and 20-50 GHz, with energies up to 0.5 MeV, duty cycles up to 20%, and pulse widths between 100 fs and 10 ps. A dielectric-filled Traveling Wave Transmission Stripline (“TWTS”) that is terminated by an impedance-matching load such as a 50 ohm load imposes a transverse modulation on a continuous electron beam. The dielectric is configured such that the phase velocity of RF propagated through the TWTS matches a desired electron energy, which can be between 100 and 500 keV, thereby transferring electromagnetic energy to the electrons. The beam is then chopped into pulses by an adjustable aperture. Pulse dispersion arising from the modulation is minimized by a suppressing section that includes a mirror demodulating TWTS, so that the spatial and temporal coherence of the pulses is substantially identical to the input beam.
Abstract:
An electrode for use in an ion implantation system includes a body portion and a penetration portion. The penetration portion includes penetration holes which are closely and regularly arranged. The penetration holes have the shape of a circle or a regular polygon with at least four sides. The electrode has an increased aperture ratio which, in turn, increases the density of the ion beam, thereby improving the efficiency of the ion implantation process.
Abstract:
An ion beam manipulator including a suppression electrode, a ground electrode connected to the suppression electrode in a parallel, spaced-apart relationship therewith by three electrically insulating connectors, the connectors being spaced 120 degrees apart from one another around a circumference of the suppression electrode and the ground electrode, a plurality of linkages extending from the electrically insulating connectors, at least one of the linkages including a pair of parallel support arms connected at a first end to a corresponding one of the electrically insulating connecters by a first pair of universal joints and connected at a second end to a bracket by a second pair of universal joints, and a drive shaft extending from the bracket, the drive shaft coupled to an actuator configured to extend and retract the drive shaft along a longitudinal axis of the drive shaft.
Abstract:
The state of an emitter can be determined by measurements of how the current changes with the extraction voltage. A field factor β function is determined by series of relatively simple measurements of charged particles emitted at different conditions. The field factor can then be used to determine derived characteristics of the emission that, in the prior art, were difficult to determine without removing the source from the focusing column and mounting it in a specialized apparatus. The relations are determined by the source configuration and have been found to be independent of the emitter shape, and so emission character can be determined as the emitter shape changes over time, without having to determine the emitter shape and without having to redefine the relation between the field factor and the series of relatively simple measurements, and the relationships between the field factor and other emission parameters.
Abstract:
The invention relates to a Method of protecting a direct electron detector (151) in a TEM. The invention involves predicting the current density on the detector before setting new beam parameters, such as changes to the excitation of condenser lenses (104), projector lenses (106) and/or beam energy. The prediction is made using an optical model or a Look-Up-Table. When the predicted exposure of the detector is less than a predetermined value, the desired changes are made, otherwise a warning message is generated and changes to the settings are postponed.