公开(公告)号：US20100178753A1

公开(公告)日：2010-07-15

申请号：US12728970

申请日：2010-03-22

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： H01L21/322

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.

摘要翻译： 一种硅晶片的制造方法，其特征在于，将从硅单晶锭切片的硅晶片退火，由此在硅晶片的第一表面和第二表面形成DZ层， 第一表面中的DZ层的一部分或第二表面中的DZ层的一部分。

公开(公告)号：US20100151692A1

公开(公告)日：2010-06-17

申请号：US12634899

申请日：2009-12-10

申请人： Toshiaki ONO ,  Yumi HOSHINO

发明人： Toshiaki ONO ,  Yumi HOSHINO

IPC分类号： H01L21/3205

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3225 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7847

摘要： A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).

摘要翻译： 一种制造外延晶片的方法，包括具有从单晶硅切割的表面的硅衬底和沉积在硅衬底的表面上的硅外延层的硅衬底，包括氧浓度控制热处理工艺，其中， 在外延生长后，在非氧化性气氛下进行外延层，使得硅外延层的表面的氧浓度为1.0×10 17〜12×10 17原子/ cm 3（ASTM F-121,1979）。

公开(公告)号：US07713838B2

公开(公告)日：2010-05-11

申请号：US10570669

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/322 ,  H01L21/3225 ,  H01L21/76254

摘要： Since a supporting wafer contains boron of 9×1018 atoms/cm3 or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamination in the active layer can be reduced. Moreover, the wafer strength is enhanced, thus preventing the wafer slipping. Since the wafer has no COP, micro voids are not detected in the LPD evaluation of the active layer, thereby improving the reliability of the evaluation. Such a bonded wafer can be manufactured at a low cast.

摘要翻译： 由于支撑晶片含有9×1018原子/ cm3以上的硼，因此在用于接合的热处理期间，有源层晶片中的一部​​分金属杂质和晶片中的金属杂质可被硼捕获。 结果，可以减少有源层中的金属污染。 此外，晶片强度提高，从而防止晶片滑动。 由于晶片没有COP，因此在有源层的LPD评价中未检测到微小空隙，从而提高了评价的可靠性。 这种接合晶片可以以低铸造制造。

公开(公告)号：US20100105191A1

公开(公告)日：2010-04-29

申请号：US12449200

申请日：2008-01-24

申请人： Yoshinori Hayamizu ,  Hiroyasu Kikuchi

发明人： Yoshinori Hayamizu ,  Hiroyasu Kikuchi

IPC分类号： H01L21/322

CPC分类号： C30B15/00 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225

摘要： The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region.

摘要翻译： 本发明提供了一种制造硅单晶晶片的方法，其中制造基于切克劳斯基法并且具有由N区形成的沿径向的整个平面的硅单晶晶片经受快速热退火 在氧化气氛中，除去在氧化气氛中快速热退火中形成的氧化膜，然后在这些气氛的氮化气氛，Ar气氛或混合气氛中进行快速热退火。 结果，可以提供可以廉价地制造其中在晶片表面层中形成DZ层的硅单晶晶片以提供优异的器件特性并且其中作为吸杂位置起作用的氧化物沉淀物的制造方法 在体区域中充分地形成。

公开(公告)号：US20100038757A1

公开(公告)日：2010-02-18

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36 ,  H01L21/26 ,  H01L21/322

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。

公开(公告)号：US20090293799A1

公开(公告)日：2009-12-03

申请号：US12453578

申请日：2009-05-15

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B15/00

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  H01L21/3225

摘要： A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

公开(公告)号：US20090280623A1

公开(公告)日：2009-11-12

申请号：US12436711

申请日：2009-05-06

申请人： Kazunari KURITA

发明人： Kazunari KURITA

IPC分类号： H01L21/268 ,  H01L21/322

CPC分类号： B23K26/0853 ,  B23K26/032 ,  B23K26/0613 ,  B23K26/0624 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/268 ,  H01L21/3225

摘要： A semiconductor wafer is produced by irradiating a laser beam to either face of a semiconductor wafer so as to fit a focusing position into a given depth position of the semiconductor wafer to generate a multiphoton absorption process only in a specific portion of the semiconductor wafer at the given depth position to thereby form a gettering sink.

摘要翻译： 通过将激光束照射到半导体晶片的任一面以便将聚焦位置适配到半导体晶片的给定深度位置来产生半导体晶片，以仅在半导体晶片的特定部分中产生多光子吸收处理 给定深度位置，从而形成吸气槽。

公开(公告)号：US20090261299A1

公开(公告)日：2009-10-22

申请号：US12404740

申请日：2009-03-16

申请人： Takashi WATANABE ,  Ryuji Takeda

发明人： Takashi WATANABE ,  Ryuji Takeda

IPC分类号： H01B1/04

CPC分类号： H01L21/3225 ,  C30B25/20 ,  C30B29/06 ,  C30B31/06 ,  C30B33/02 ,  C30B33/04 ,  H01L21/3221

摘要： A silicon wafer which has DZ layers formed on both sides thereof by heat treatment in an atmosphere of reducing gas (such as hydrogen) or rare gas (such as argon) with a specific temperature profile for heating, holding, and cooling, and which also has a gettering site of BMD in the bulk inside the DZ layer. A silicon wafer which has a silicon epitaxial layer formed on one side thereof. The DZ layer and the silicon epitaxial layer contain dissolved oxygen introduced into their surface parts, with the concentration and distribution of dissolved oxygen properly controlled. Introduction of oxygen into the surface part is accomplished by heat treatment and ensuing rapid cooling in an atmosphere of oxygen-containing gas.

摘要翻译： 通过在还原性气体（例如氢气）或稀有气体（例如氩气）的气氛中进行热处理，具有用于加热，保持和冷却的特定温度特性，在其两侧形成DZ层的硅晶片，并且还 在DZ层内有大量的BMD吸气点。 硅晶片，其一侧形成硅外延层。 DZ层和硅外延层含有引入其表面部分的溶解氧，适当控制溶解氧的浓度和分布。 将氧气引入表面部分是通过热处理实现的，并且随后在含氧气体的气氛中快速冷却。

公开(公告)号：US20090210166A1

公开(公告)日：2009-08-20

申请号：US10586445

申请日：2005-01-27

申请人： Kozo Nakamura ,  Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

发明人： Kozo Nakamura ,  Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

IPC分类号： G06F19/00

CPC分类号： C30B15/206 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.

摘要翻译： 通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率 在硅单晶中进行热处理的同时测定硅单晶。 此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

公开(公告)号：US20090209085A1

公开(公告)日：2009-08-20

申请号：US12308990

申请日：2007-06-08

申请人： Akihiko Tamura ,  Konomu Oki

发明人： Akihiko Tamura ,  Konomu Oki

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/3223 ,  H01L21/3225

摘要： The present invention provides a method for reusing a delaminated wafer, which is a method for applying reprocessing that is at least polishing to a delaminated wafer 17 byproduced when manufacturing an SOI wafer based on an ion implantation delamination method and thereby again reusing the delaminated wafer 17 as a bond wafer 21 in an SOI wafer manufacturing process, wherein, at least, a CZ wafer 11 used as the bond wafer is a low-defect wafer whose entire surface is formed of an N region, and an RTA treatment is carried out in the reprocessing with respect to the delaminated wafer 17 at a higher temperature than a temperature in formation of a thermal oxide film 12 performed with respect to the bond wafer in the SOI wafer manufacturing process. As a result, there can be provided the method for reusing a delaminated wafer which does not induce a bonding failure or a reduction in quality of an SOI layer even if the delaminated wafer byproduced when the CZ wafer having a large diameter of 200 mm or above is used as the bond wafer to fabricate the SOI wafer based on the ion implantation delamination method is repeatedly reused as the bond wafer.

摘要翻译： 本发明提供了一种重新使用分层晶片的方法，其是通过在基于离子注入分层方法制造SOI晶片时通过产生的至少抛光到再分散晶片17的再处理方法，从而再次使用分层晶片17 作为SOI晶片制造工艺中的接合晶片21，其中，至少用作接合晶片的CZ晶片11是整个表面由N区形成的低缺陷晶片，并且RTA处理在 相对于分解晶片17在相对于SOI晶片制造工艺中的接合晶片执行的热氧化膜12的形成温度以上的温度下的再处理。 其结果是，即使在大直径为200mm以上的CZ晶片发生剥离的晶片时，也可以提供不会引起SOI层的接合不良或质量降低的剥离晶片的再利用方法 用作接合晶片以制造SOI晶圆为基础的离子注入分层方法被反复重复使用作为接合晶片。