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    Single crystalline base thin film
    41.
    发明申请
    Single crystalline base thin film 审中-公开
    单晶基底薄膜

    公开(公告)号：US20060009362A1

    公开(公告)日：2006-01-12

    申请号：US10526896

    申请日：2003-10-29

    申请人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

    发明人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2461

    摘要： The invention relates to a technique for forming a single crystalline thin film of good quality on an underlayer. Such a technique is suitably applicable to provision of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. The single crystalline thin film formed on a substratum is made of a substance different from that of the substratum. A specific atomic layer contained in common in the substratum and the thin film is shared at an interface between the substratum and the thin film. In a region as adjacent to the interface as 100 or fewer unit cells of the thin film apart from the interface, a ratio of crystalline region having grown with an orientation of ±2 degrees or less deviation angle on the basis of a crystal orientation of the substratum is 50% or more.

    摘要翻译： 本发明涉及一种在底层上形成质量好的单晶薄膜的技术。 这种技术适用于提供可用于超导线材，超导装置等的氧化物高温超导体薄膜。 在基底上形成的单晶薄膜由与底层不同的物质制成。 在基底和薄膜中共同包含的特定原子层在基底和薄膜之间的界面处共享。 在与接口相邻的区域中，与界面相比，薄膜的单元电池为100个或更少，根据晶体取向为±2度以下的取向生长的结晶区域的比例 基质为50％以上。

    Rare-earth-Ba-Cu-O superconductors and methods of making same
    44.
    发明申请
    Rare-earth-Ba-Cu-O superconductors and methods of making same 有权
    稀土 - Ba-Cu-O超导体及其制造方法

    公开(公告)号：US20050007227A1

    公开(公告)日：2005-01-13

    申请号：US10616719

    申请日：2003-07-10

    申请人： Hee-Gyoun Lee ,  Yijie Li ,  Venkat Selvamanickam

    发明人： Hee-Gyoun Lee ,  Yijie Li ,  Venkat Selvamanickam

    IPC分类号： H01F1/00 ,  H01L39/14 ,  H01L39/24

    CPC分类号： H01L39/143 ,  H01L39/2461

    摘要： Rare-earth-Ba—Cu—O superconductors having improved critical current density are described, as are methods of making same. These superconductors comprise a drop in Jc of less than a factor of about 7 at a temperature of between about 30K to about 77K, and at a magnetic field of about 1 Tesla, when the magnetic field is applied normal to the surface of the superconductor, as compared to a Jc in the presence of no magnetic field. These superconductors, when a magnetic field is applied perpendicular to the HTS surface have a peak Jc that is about 50-90%, and when a magnetic field is applied in any orientation with respect to the HTS surface have a Jc value that is at least about 50%, of the peak Jc that exists when the magnetic field is applied parallel to the surface of the superconductor.

    摘要翻译： 描述了具有改善的临界电流密度的稀土-BA-Cu-O超导体，以及制备它们的方法。 当磁场垂直于超导体的表面施加时，这些超导体在约30K至约77K之间的温度和约1特斯拉的磁场下包含小于7的小于约7的Jc， 与没有磁场的Jc相比。 当垂直于HTS表面施加磁场时，这些超导体具有约50-90％的峰值Jc，并且当相对于HTS表面以任何取向施加磁场时，Jc值至少为 当平行于超导体的表面施加磁场时存在的峰值Jc的约50％。

    Oxide high-temperature superconductor and its production method
    45.
    发明申请
    Oxide high-temperature superconductor and its production method 失效
    氧化物高温超导体及其制备方法

    公开(公告)号：US20040254078A1

    公开(公告)日：2004-12-16

    申请号：US10487415

    申请日：2004-02-23

    发明人： Sundaresan Athinarayanan ,  Hideo Ihara ,  Yoshiko Ihara ,  Hideyo Ihara ,  Hidetaka Ihara ,  Gen-ei Ihara ,  Chiaki Ihara

    IPC分类号： H01B001/00

    CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2458 ,  Y10S505/782 ,  Y10S505/783

    摘要： Disclosed is an oxide high temperature superconductor having a crystalline substrate of low dielectric constant formed thereon with a thin film of the oxide high temperature superconductor that is high in crystallographic integrity and excels in crystallographic orientation as well as a method of making such an oxide high temperature superconductor. In fabricating an oxide high temperature superconductor containing Ba as a constituent element and having such a substrate formed thereon with a thin film of the oxide high temperature superconductor, a first buffer layer composed of CeO3 is formed on a sapphire R (1, null1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, null1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr is formed on the first buffer layer made of CeO3 to allow the oxide high temperature superconductor thin film to be formed on the second buffer layer. Thus, if the first buffer layer for reducing the lattice mismatch between the sapphire R (1, null1, 0, 2) face substrate and the oxide high temperature superconductor thin film is liable to an interfacial reaction with Ba from the oxide high temperature superconductor thin film, the second buffer layer prevents the interfacial reaction, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels on both crystallographic integrity and crystallographic orientation.

    摘要翻译： 公开了一种氧化物高温超导体，其具有在其上形成的具有高结晶学完整性和优异的晶体取向的氧化物高温超导体的薄膜的低介电常数的结晶衬底，以及制造这种氧化物高温 超导体。 在制造含有Ba作为构成元素的氧化物高温超导体并且在其上形成有氧化物高温超导体的薄膜的基板上，在蓝宝石R（1，-1，...）上形成由CeO 3构成的第一缓冲层， 0，2）面板，用于减少蓝宝石R（1，-1,0,2）面基板和氧化物高温超导体薄膜之间的晶格失配，以及由这种氧化物高温超导体构成的第二缓冲层， 在由CeO 3制成的第一缓冲层上形成Ba被Sr取代的Ba，以在第二缓冲层上形成氧化物高温超导体薄膜。 因此，如果用于降低蓝宝石R（1，-1,0,2）面对衬底和氧化物高温超导体薄膜之间的晶格失配的第一缓冲层易于与来自氧化物高温超导体的Ba的界面反应 薄膜，第二缓冲层防止界面反应，从而允许在结晶学完整性和晶体取向上均优异的氧化物高温超导体薄膜的外延生长。

    METHOD OF PRODUCING BIAXIALLY TEXTURED BUFFER LAYERS AND RELATED ARTICLES, DEVICES AND SYSTEMS
    46.
    发明申请
    METHOD OF PRODUCING BIAXIALLY TEXTURED BUFFER LAYERS AND RELATED ARTICLES, DEVICES AND SYSTEMS 有权
    生产双色纹理缓冲层的方法及相关文章，设备和系统

    公开(公告)号：US20040248743A1

    公开(公告)日：2004-12-09

    申请号：US10457184

    申请日：2003-06-09

    申请人： University of Florida ,  SuperPower, Inc.

    发明人： David P. Norton ,  Venkat Selvamanickam

    IPC分类号： B32B001/00 ,  H01F006/00 ,  H01B012/00 ,  H01L039/00

    CPC分类号： H01L39/2461 ,  C30B25/18 ,  C30B29/22 ,  Y10S428/93

    摘要： A superconductor article includes a substrate and a first buffer film disposed on the substrate. The first buffer film has a uniaxial crystal texture characterized (i) texture in a first crystallographic direction that extends out-of-plane of the first buffer film with no significant texture in a second direction that extends in-plane of the first buffer film, or (ii) texture in a first crystallographic direction that extends in-plane of the first buffer film with no significant texture in a second direction that extends out-of-plane of the first buffer film. A second buffer film is disposed on the first buffer film, the second buffer film having a biaxial crystal texture. A superconductor layer can be disposed on the second buffer film. Ion-beam assisted deposition (IBAD) can be used to deposit the second buffer film.

    摘要翻译： 超导体制品包括衬底和设置在衬底上的第一缓冲膜。 第一缓冲膜具有单轴晶体结构，其特征在于（i）沿着在第一缓冲膜的平面内延伸的第二方向上没有显着纹理的第一缓冲膜的平面外延伸的第一结晶方向的纹理， 或（ii）在第一缓冲膜的平面内延伸的第一结晶方向上的纹理，在第一缓冲膜的平面外延伸的第二方向上没有显着纹理。 第二缓冲膜设置在第一缓冲膜上，第二缓冲膜具有双轴晶体结构。 超导体层可以设置在第二缓冲膜上。 离子束辅助沉积（IBAD）可用于沉积第二缓冲膜。

    Particle beam biaxial orientation of a substrate for epitaxial crystal growth
    47.
    发明授权
    Particle beam biaxial orientation of a substrate for epitaxial crystal growth 失效
    用于外延晶体生长的衬底的粒子束双轴取向

    公开(公告)号：US06821338B2

    公开(公告)日：2004-11-23

    申请号：US09739391

    申请日：2000-12-15

    申请人： Ronald P. Reade ,  Paul H. Berdahl ,  Richard E. Russo

    发明人： Ronald P. Reade ,  Paul H. Berdahl ,  Richard E. Russo

    IPC分类号： C30B106

    CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B33/04

    摘要： The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.

    摘要翻译： 本发明提供了一种通过使所述结构与倾斜粒子束接触而增加预先形成的非单晶结构的所需双轴取向程度的方法，从而在结构中形成具有增加的所需双轴取向的成核面。 该方法还可以包括使用成核表面外延生长晶体结构以促进外延生长的步骤。 本发明还提供一种晶体结构，其包含通过使预先形成的非单晶结构与倾斜粒子束，0至10个相邻取向透射层和结晶活性层接触而形成的成核表面。 在该结构中，活性层与成核面对准。

    Conductive and robust nitride buffer layers on biaxially textured substrates
    48.
    发明授权
    Conductive and robust nitride buffer layers on biaxially textured substrates 有权
    在双轴纹理化衬底上的导电和坚固的氮化物缓冲层

    公开(公告)号：US06784139B1

    公开(公告)日：2004-08-31

    申请号：US09895866

    申请日：2001-06-29

    申请人： Sambasivan Sankar ,  Amit Goyal ,  Scott A. Barnett ,  Ilwon Kim ,  Donald M. Kroeger

    发明人： Sambasivan Sankar ,  Amit Goyal ,  Scott A. Barnett ,  Ilwon Kim ,  Donald M. Kroeger

    IPC分类号： H01B1200

    CPC分类号： H01L39/2461

    摘要： The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

    摘要翻译： 本发明涉及在诸如金属和合金的双轴纹理化衬底上外延沉积的外延，导电和机械坚固的立方氮化物缓冲层。 本发明包括具有氮化物外延层的双轴织构化衬底。 本发明还公开了一种使用高速沉积方法形成这种外延层以及不使用形成气体的方法。 本发明还包括在双轴织构氮化物层上的氧化物外延层。 在一些实施例中，制品还包括可以是超导性质的电磁装置。

    BUFFER LAYERS AND ARTICLES FOR ELECTRONIC DEVICES
    49.
    发明申请
    BUFFER LAYERS AND ARTICLES FOR ELECTRONIC DEVICES 失效
    缓冲层和电子设备文章

    公开(公告)号：US20040121191A1

    公开(公告)日：2004-06-24

    申请号：US10324883

    申请日：2002-12-19

    发明人： Mariappan P. Paranthaman ,  Tolga Aytug ,  David K. Christen ,  Roeland Feenstra ,  Amit Goyal

    IPC分类号： B32B009/00

    CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/225 ,  C30B29/24

    摘要： Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1nullxAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

    摘要翻译： 用于在用于制造超导和其它电子制品的双轴织构和非纹理的金属和金属氧化物基底上沉积缓冲层的材料包括RMnO3，R1-xAxMnO3及其组合; 其中R包括选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Th，Dy，Ho，Er，Tm，Yb，Lu和Y中的元素，A包括选自 由Be，Mg，Ca，Sr，Ba和Ra组成的组。