Abstract:
The invention herein pertains to a method for reducing adhesion of marine organisms to a substrate and an article that is a substrate having thereon a solid coating of a fluorinated polyurethane elastomer. The elastomer is tough and has antifouling and release properties in reference to marine organisms. The method includes the steps of providing a liquid mixture of the fluorinated polyurethane elastomer, applying the elastomer mixture to said substrate, and curing the elastomer mixture to a solid coating of the fluorinated polyurethane elastomer, the elastomer having surface energy (which is a function of fluorine content) of 15-30 milli J/m2, Young's modulus of elasticity of 2-15 MPa, and fluorine content of 3-25%.
Abstract translation:本发明涉及一种降低海洋生物体与基材的附着力的方法和作为其上具有含氟聚氨酯弹性体的固体涂层的基材的制品。 弹性体是坚韧的并且具有关于海洋生物的防污和释放性质。 该方法包括以下步骤:提供氟化聚氨酯弹性体的液体混合物,将弹性体混合物施加到所述基底,并将弹性体混合物固化成氟化聚氨酯弹性体的固体涂层,弹性体具有表面能(其为 氟含量)为15-30毫J / m 2,杨氏弹性模量为2-15MPa,氟含量为3-25%。
Abstract:
The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
Abstract:
An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.
Abstract:
A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water after attaching electrical contacts to the crystal surface.
Abstract translation:公开了一种CdZnTe(CZT)晶体,其具有天然CdO介电涂层以减少表面漏电流,从而提高使用CZT晶体的检测器的分辨率。 提供用于形成电介质涂层的两步法,其包括用常规溴/甲醇蚀刻处理的溶液蚀刻CZT晶体的表面,并用10w / o NH4F和10w的溶液钝化CZT晶体表面 / o H2O2在水中,将电触点连接到晶体表面。
Abstract:
The present invention relates to a method of coating polymer film that includes the steps of extruding a cast sheet; stretching the sheet in a machine direction; applying a UV-curable coating to the sheet in-line; stretching the sheet in a transverse direction in a tenter; and exposing the coated sheet to UV radiation in-line.
Abstract:
Ethylene copolymer elastomer compositions, acrylate rubber compositions, nitrile rubber compositions, fluoroelastomer compositions, and chlorinated elastomer compositions are provided which are curable by exposure to UV radiation. The compositions are particularly suited for production of elastomeric seals using hot melt equipment and a gasketing in place technique.
Abstract:
Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.
Abstract:
The present invention discloses a color-modifying method, which comprises the provision of a metal oxide thin film (14) based on Ni and/or Cr. The method is characterized in that, when coloring the metal oxide film (14), exposing the metal oxide thin film to ozone, and when bleaching the metal oxide film, exposing the metal oxide film to UV radiation (18). A lamination process or a deposition of another thin film may follow the exposure. Preferably, exposing the metal oxide thin film (14) to ultraviolet radiation (18) in an oxygen-containing atmosphere (20) provides the ozone exposure and exposing the metal oxide thin film to ultraviolet radiation (18) in an oxygen-free atmosphere (20) provides the ultraviolet exposure.
Abstract:
Ethylene copolymer elastomer compositions, acrylate rubber compositions, nitrile rubber compositions, fluoroelastomer compositions, and chlorinated elastomer compositions are provided which are curable by exposure to UV radiation. The compositions are particularly suited for production of elastomeric seals using hot melt equipment and a gasketing in place technique.
Abstract:
An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.