Robust nontoxic antifouling elastomers
    41.
    发明授权
    Robust nontoxic antifouling elastomers 失效
    坚固无毒的防污弹性体

    公开(公告)号:US06733838B2

    公开(公告)日:2004-05-11

    申请号:US10396392

    申请日:2003-03-26

    Abstract: The invention herein pertains to a method for reducing adhesion of marine organisms to a substrate and an article that is a substrate having thereon a solid coating of a fluorinated polyurethane elastomer. The elastomer is tough and has antifouling and release properties in reference to marine organisms. The method includes the steps of providing a liquid mixture of the fluorinated polyurethane elastomer, applying the elastomer mixture to said substrate, and curing the elastomer mixture to a solid coating of the fluorinated polyurethane elastomer, the elastomer having surface energy (which is a function of fluorine content) of 15-30 milli J/m2, Young's modulus of elasticity of 2-15 MPa, and fluorine content of 3-25%.

    Abstract translation: 本发明涉及一种降低海洋生物体与基材的附着力的方法和作为其上具有含氟聚氨酯弹性体的固体涂层的基材的制品。 弹性体是坚韧的并且具有关于海洋生物的防污和释放性质。 该方法包括以下步骤:提供氟化聚氨酯弹性体的液体混合物,将弹性体混合物施加到所述基底,并将弹性体混合物固化成氟化聚氨酯弹性体的固体涂层,弹性体具有表面能(其为 氟含量)为15-30毫J / m 2,杨氏弹性模量为2-15MPa,氟含量为3-25%。

    Method for constructing a film on a semiconductor wafer
    42.
    发明授权
    Method for constructing a film on a semiconductor wafer 失效
    在半导体晶片上构造膜的方法

    公开(公告)号:US06699530B2

    公开(公告)日:2004-03-02

    申请号:US08808246

    申请日:1997-02-28

    Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

    Abstract translation: 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来,将材料层退火。 一旦退火完成,材料可能被氧化。 或者,一旦退火完成,材料可能暴露于硅气体。 沉积,退火和氧化或硅气体暴露都可以在相同的室中进行,而不需要从腔室中移除晶片,直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室,喷头,晶片支架和射频信号装置。 淋浴头将气体供应到处理室中,而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架,用于向喷头提供第一rf信号,并将第二rf信号耦合到晶片支架。

    Ionizing radiation detector
    44.
    发明授权
    Ionizing radiation detector 失效
    电离辐射探测器

    公开(公告)号:US06649915B2

    公开(公告)日:2003-11-18

    申请号:US10325995

    申请日:2002-12-19

    CPC classification number: H01L31/02966 G01T1/2002 H01L31/1032 H01L31/1832

    Abstract: A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water after attaching electrical contacts to the crystal surface.

    Abstract translation: 公开了一种CdZnTe(CZT)晶体,其具有天然CdO介电涂层以减少表面漏电流,从而提高使用CZT晶体的检测器的分辨率。 提供用于形成电介质涂层的两步法,其包括用常规溴/甲醇蚀刻处理的溶液蚀刻CZT晶体的表面,并用10w / o NH4F和10w的溶液钝化CZT晶体表面 / o H2O2在水中,将电触点连接到晶体表面。

    Color-modifying treatment of thin films
    48.
    发明授权
    Color-modifying treatment of thin films 有权
    薄膜的改色处理

    公开(公告)号:US06500287B1

    公开(公告)日:2002-12-31

    申请号:US09686747

    申请日:2000-10-12

    Abstract: The present invention discloses a color-modifying method, which comprises the provision of a metal oxide thin film (14) based on Ni and/or Cr. The method is characterized in that, when coloring the metal oxide film (14), exposing the metal oxide thin film to ozone, and when bleaching the metal oxide film, exposing the metal oxide film to UV radiation (18). A lamination process or a deposition of another thin film may follow the exposure. Preferably, exposing the metal oxide thin film (14) to ultraviolet radiation (18) in an oxygen-containing atmosphere (20) provides the ozone exposure and exposing the metal oxide thin film to ultraviolet radiation (18) in an oxygen-free atmosphere (20) provides the ultraviolet exposure.

    Abstract translation: 本发明公开了一种颜色修正方法,其包括提供基于Ni和/或Cr的金属氧化物薄膜(14)。 该方法的特征在于,当着色金属氧化物膜(14)时,将金属氧化物薄膜暴露于臭氧,并且当漂白金属氧化物膜时,将金属氧化物膜暴露于UV辐射(18)。 曝光后可以进行层压工艺或另一薄膜的沉积。 优选地,在含氧气氛(20)中将金属氧化物薄膜(14)暴露于紫外线辐射(18)提供臭氧暴露并在无氧气氛中将金属氧化物薄膜暴露于紫外线辐射(18) 20)提供紫外线曝光。

    Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
    50.
    发明授权
    Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology 有权
    使用远程等离子体源清洗技术的氮化硅沉积中白色粉末还原的装置和方法

    公开(公告)号:US06468601B1

    公开(公告)日:2002-10-22

    申请号:US09523538

    申请日:2000-03-10

    CPC classification number: C23C16/4405

    Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

    Abstract translation: 用于在用于沉积氮化硅的处理室中减少白色粉末的生产的装置和方法。 该方法的步骤包括加热处理室壁的至少一部分; 提供覆盖所述处理室的壁的主要部分的衬垫; 提供连接到处理室内部的远程室; 导致远程室中的清洁气体的等离子体; 并将清洁气体的等离子体的一部分流入处理室。 该装置包括具有壁的沉积室; 用于加热壁的装置,热耦合到壁的装置; 覆盖壁的大部分的衬垫; 设置在室外的远程室; 活化源,其适于将能量输送到所述远程室中; 用于将前体气体从远程气体供给流入远程室的第一导管,其中激活源被激活以形成反应性物质; 以及用于使反应物质从远程室流入沉积室的第二导管。

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