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公开(公告)号：US10029919B2
公开(公告)日：2018-07-24
申请号：US14698615
申请日：2015-04-28
发明人： Hung-Sheng Chou , Yu-Min Yang , Wen-Huai Yu , Sung Lin Hsu , Wen-Ching Hsu , Chung-Wen Lan , Yu-Ting Wong
摘要： Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-Σ grain boundary from about 60 to about 75 and a percentage of Σ3 grain boundary from about 12 to about 25.
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公开(公告)号：US09982334B2
公开(公告)日：2018-05-29
申请号：US14375154
申请日：2013-01-31
发明人： Hiroshi Takamura , Ryo Suzuki
CPC分类号： C23C14/3414 , C01B33/02 , C23C14/16 , H01J37/3426 , H01J2237/339
摘要： Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 μm or more for samples of 100×100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90° C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.
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公开(公告)号：US09947918B2
公开(公告)日：2018-04-17
申请号：US15147567
申请日：2016-05-05
IPC分类号： H01M4/38 , H01M4/134 , H01M4/62 , C01B33/02 , C25F3/12 , H01M4/1395 , H01M10/0525 , H01M4/36 , H01M10/052 , H01M4/02
CPC分类号： H01M4/134 , C01B33/02 , C01P2004/61 , C01P2006/16 , C25F3/12 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/621 , H01M4/622 , H01M4/626 , H01M10/052 , H01M10/0525 , H01M2004/021 , H01M2004/027
摘要： Embodiments of the present disclosure pertain to porous silicon particulates and anode materials that contain them. In some embodiments, each of the porous silicon particulates include a plurality of macropores, mesopores and micropores such that the micropores and mesopores are within the macropores. The porous silicon particulates also contain: a coating associated with the porous silicon particulates; and a binding material associated with the porous silicon particulates. The binding material can include binders, carbon materials, polymers, metals, additives, carbohydrates, and combinations thereof.
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44.发明申请公开(公告)号：US20180021981A1
公开(公告)日：2018-01-25
申请号：US15653388
申请日：2017-07-18
发明人： Po-Nien Lai , Shin-Lee Liu , Huang-Chih Lu
CPC分类号： B28D5/007 , B23Q11/1069 , C01B33/02 , C10N2240/401
摘要： Disclosed herein is a method for recovering silicon particles and abrasive grains from a wasted abrasive slurry. The method includes providing a wasted abrasive slurry that contains silicon particles, abrasive grains and a water-soluble glycol, and mixing the wasted abrasive slurry with a metal chloride solution, so as to obtain a micelle layer and a slurry layer, the micelle layer including the water-soluble glycol, and the slurry layer including the silicon particles and the abrasive grains.
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公开(公告)号：US20170341943A1
公开(公告)日：2017-11-30
申请号：US15537968
申请日：2015-12-09
发明人： Shuichi Miyao , Shigeyoshi Netsu , Junichi Okada
IPC分类号： C01B33/02 , C30B29/06 , C01B33/035 , C30B13/30 , G01N23/207 , G01N23/20
CPC分类号： C01B33/02 , C01B33/035 , C30B13/00 , C30B13/30 , C30B29/06 , C30B35/007 , G01N23/20 , G01N23/207
摘要： For evaluating a polycrystalline silicon rod to be used as a raw material for production of FZ Si single crystals, novel evaluation values (values of characteristics×amount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a Siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics.
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公开(公告)号：US09828250B2
公开(公告)日：2017-11-28
申请号：US13394009
申请日：2010-09-17
申请人： Manabu Kondou , Reiji Yoshimura
发明人： Manabu Kondou , Reiji Yoshimura
CPC分类号： C01B33/02 , B01J19/02 , B01J2219/0245 , Y10T29/49826 , Y10T29/49964 , Y10T428/1359 , Y10T428/24008 , Y10T428/31678
摘要： [Problems] To provide a method of preventing the polysilicon from being contaminated with metals by providing a resin cover on the surface of a metal substrate that comes in contact with the polysilicon, wherein the metal surfaces are reliably prevented from being exposed that is caused by the wear of the cover.[Means for Solution] A method of preventing the polysilicon from being contaminated with metals caused by the contact of the polysilicon with a metal substrate by providing a resin cover on the surface of the metal substrate, wherein the resin cover 3 comprises two kinds of resin sheets 3a and 3b overlapped one upon the other.
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47.发明授权公开(公告)号：US09815041B2
公开(公告)日：2017-11-14
申请号：US14785150
申请日：2014-04-16
发明人： Wenwu Jiang , Hongfu Jiang , Feng Wu , Zhenwu Zhong , Wenlong Chen
IPC分类号： B01J8/00 , B01J8/18 , B01J8/24 , B01J8/42 , B01J19/00 , B01J19/02 , B01J19/24 , C01B33/00 , C01B33/02 , C01B33/021 , C01B33/027 , C01B33/03
CPC分类号： B01J8/24 , B01J8/1827 , B01J8/1836 , B01J8/42 , B01J19/02 , B01J2208/00433 , B01J2208/00469 , B01J2208/00893 , B01J2208/00902 , B01J2219/0209 , B01J2219/0218 , B01J2219/0227 , B01J2219/0263 , B01J2219/0286 , C01B33/03
摘要： The present invention relates to a fluidized bed reactor, comprising a reaction tube, a distributor and a heating device, the reaction tube and the distributor at the bottom of the reaction tube composing a closed space, the distributor comprising a gas inlet and a product outlet, and the reaction tube comprising a tail gas outlet and a seed inlet at the top or upper part respectively, characterized in that the reaction tube comprises a reaction inner tube and a reaction outer tube, and the heating device is an induction heating device placed within a hollow cavity formed between the external wall of the reaction inner tube and the internal wall of the reaction outer tube, wherein the hollow cavity is filled with hydrogen, nitrogen or inert gas for protection, and is able to maintain a pressure of about 0.01 to about 5 MPa; and also to a process of producing high purity granular polysilicon using the reactor. The fluidized bed reactor according to the present invention uses induction heating to heat directly the silicon particles inside the reaction chamber, such that the temperature of the reaction tube is lower than that inside the reaction chamber, which accordingly avoids deposition on the tube wall and results in more uniform heating, and thus is useful for large diameter fluidized bed reactors with much increased output for a single reactor.
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公开(公告)号：US20170317348A1
公开(公告)日：2017-11-02
申请号：US15654745
申请日：2017-07-20
IPC分类号： H01M4/38 , H01M4/134 , C01B33/02 , H01M10/0525
CPC分类号： H01M4/386 , C01B33/02 , H01M4/134 , H01M4/38 , H01M10/0525
摘要： A negative electrode active material for nonaqueous secondary batteries is disclosed. The active material contains a silicon solid solution having one or more than one of a group 3 semimetal or metal element, a group 4 semimetal or metal element except silicon, and a group 5 nonmetal or semimetal element incorporated in silicon as a solute element. The solute element is present more on the crystal grain boundaries of the silicon solid solution than inside the grains.
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公开(公告)号：US20170210630A1
公开(公告)日：2017-07-27
申请号：US15327693
申请日：2015-07-28
发明人： Shuichi MIYAO , Shigeyoshi NETSU
IPC分类号： C01B33/035 , G01N23/225 , G01N23/207 , C01B33/02 , G01N23/203
CPC分类号： C01B33/035 , C01B33/02 , C01P2002/60 , G01N23/203 , G01N23/207 , G01N23/225
摘要： In the present invention, when polycrystalline silicon bar is manufactured by the Siemens method, polycrystalline silicon is deposited, for example, under the conditions that during performing the deposition reaction of polycrystalline silicon, the reaction temperature is set to fall within a range from 1100° C. to 1150° C. and the internal pressure of the furnace is controlled to fall within a range from 0.45 to 0.9 MPa. By controlling the internal pressure of the furnace so as to fall within such a range, it is possible to obtain a polycrystalline silicon bar having an average value of the crystal grain sizes of 6 μm or less, based on the crystal grain sizes evaluated by the EBSD method in arbitrary portions.
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公开(公告)号：US09647263B2
公开(公告)日：2017-05-09
申请号：US13820234
申请日：2011-09-02
申请人： Mino Green
发明人： Mino Green
IPC分类号： H01M4/36 , B82Y30/00 , C01B33/02 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M4/48 , H01M4/58 , H01M4/62 , H01M10/0568 , H01M4/64 , H01M4/04 , H01M4/505 , H01M4/525 , H01M4/587 , H01M10/0525 , H01M10/054 , H01M4/02
CPC分类号： H01M4/364 , B82Y30/00 , C01B33/02 , H01M4/0402 , H01M4/0404 , H01M4/134 , H01M4/1395 , H01M4/362 , H01M4/38 , H01M4/386 , H01M4/387 , H01M4/483 , H01M4/505 , H01M4/525 , H01M4/58 , H01M4/5815 , H01M4/587 , H01M4/621 , H01M4/623 , H01M4/625 , H01M4/64 , H01M10/0525 , H01M10/054 , H01M10/0568 , H01M2004/021 , H01M2004/027 , Y02E60/122 , Y02P70/54
摘要： A composition for use in a lithium ion battery includes a plurality of elongate elements and a plurality of particles. The elongate elements and particles each include a metal or semi-metal selected from one or more of the group including silicon, tin, germanium, aluminum or mixtures thereof. The composition may include additional ingredients such as a binder, a conductive material and a further electro-active material, such as graphite. The compositions can be used for the fabrication of electrodes, preferably anodes in the manufacture of lithium ion batteries and optionally batteries based on magnesium ions or sodium ions. The composition is able to intercalate and release lithium during the charging and discharging cycles respectively of a battery into which it has been incorporated. Methods of fabricating the composition and electrodes including the composition are included as well as electrodes thus prepared and devices including such electrodes.
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