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    Polycrystalline Silicon Sputtering Target
    1.
    发明申请
    Polycrystalline Silicon Sputtering Target 有权
    多晶硅溅射靶

    公开(公告)号：US20150001069A1

    公开(公告)日：2015-01-01

    申请号：US14375154

    申请日：2013-01-31

    Applicant: JX Nippon Mining & Metals Corporation

    Inventor： Hiroshi Takamura ,  Ryo Suzuki

    IPC: C23C14/34 ,  H01J37/34

    CPC classification number: C23C14/3414 ,  C01B33/02 ,  C23C14/16 ,  H01J37/3426 ,  H01J2237/339

    Abstract: Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 μm or more for samples of 100×100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90° C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.

    Abstract translation: 提供通过熔融法制造的多晶硅靶。 在多晶硅溅射靶中，从目标的任意面取出的100×100mm的样品的平均氮化物或碳化物粒子的平均量小于3。 还提供了一种制造多晶硅溅射靶的方法。 该方法的特征在于，通过用电子束熔化作为原料的硅并将熔融硅倒入加热至90℃或更高的坩埚中来生产硅锭，并将所得的锭加工成靶。 本发明着眼于通过熔融法制造的多晶硅，其目的在于提供一种通过减少氮化硅和碳化硅的存在而提供高品质的多晶硅溅射靶，并提供多晶硅溅射靶 通过设计生产过程具有很高的弯曲强度。

    LOW PRESSURE HIGH FREQUENCY PULSED PLASMA REACTOR FOR PRODUCING NANOPARTICLES
    2.
    发明申请
    LOW PRESSURE HIGH FREQUENCY PULSED PLASMA REACTOR FOR PRODUCING NANOPARTICLES 审中-公开
    低压高频脉冲等离子体反应器生产纳米二氧化碳

    公开(公告)号：US20130189446A1

    公开(公告)日：2013-07-25

    申请号：US13060722

    申请日：2009-09-01

    Applicant: James A. Casey ,  Vasgen Shamamian

    Inventor： James A. Casey ,  Vasgen Shamamian

    IPC: C23C16/24 ,  B01F13/00

    CPC classification number: C23C16/24 ,  B01F13/0001 ,  B01J2/04 ,  B82Y40/00 ,  H01J37/32082 ,  H01J2237/339 ,  Y10S977/891

    Abstract: The present invention provides a low-pressure very high frequency pulsed plasma reactor system for synthesis of nanoparticles. The system includes a chamber configured to receive at least one substrate and capable of being evacuated to a selected pressure. The system also includes a plasma source for generating a plasma from at least one precursor gas and a very high frequency radio frequency power source for providing continuous or pulsed radio frequency power to the plasma at a selected frequency. The frequency is selected based on a coupling efficiency between the pulsed radio frequency power and the plasma. Parameters of the VHF discharge and gas precursors are selected based on nanoparticle properties. The nanoparticle average size and particle size distribution are manipulated by controlling the residence time of the glow discharge (pulsing plasma) relative to the gas molecular residence time through the discharge and the mass flow rates of the nanoparticle precursor gas (or gases).

    Abstract translation: 本发明提供了一种用于合成纳米颗粒的低压超高频脉冲等离子体反应器系统。 该系统包括被配置为容纳至少一个基板并能够被抽空到选定压力的腔室。 该系统还包括用于从至少一个前体气体产生等离子体的等离子体源和用于以选定频率向等离子体提供连续或脉冲射频功率的非常高频率的射频电源。 基于脉冲射频功率和等离子体之间的耦合效率选择频率。 基于纳米颗粒性质选择VHF排放和气体前体的参数。 通过控制辉光放电（脉冲等离子体）相对于通过放电的气体分子停留时间和纳米颗粒前体气体（或气体）的质量流量的停留时间来操纵纳米颗粒平均尺寸和粒度分布。

    Polycrystalline silicon sputtering target
    5.
    发明授权
    Polycrystalline silicon sputtering target 有权

    公开(公告)号：US09982334B2

    公开(公告)日：2018-05-29

    申请号：US14375154

    申请日：2013-01-31

    Applicant: JX Nippon Mining & Metals Corporation

    Inventor： Hiroshi Takamura ,  Ryo Suzuki

    IPC: C23C14/34 ,  C01B33/02 ,  H01J37/34 ,  C23C14/16

    CPC classification number: C23C14/3414 ,  C01B33/02 ,  C23C14/16 ,  H01J37/3426 ,  H01J2237/339

    Abstract: Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 μm or more for samples of 100×100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90° C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.

    Method of synthesizing diamond
    8.
    发明授权
    Method of synthesizing diamond 失效
    金刚石合成方法

    公开(公告)号：US5993919A

    公开(公告)日：1999-11-30

    申请号：US984609

    申请日：1997-12-03

    Applicant: Takashi Tsuno ,  Takahiro Imai ,  Kentaro Yoshida ,  Yoshiaki Kumazawa

    Inventor： Takashi Tsuno ,  Takahiro Imai ,  Kentaro Yoshida ,  Yoshiaki Kumazawa

    IPC: C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B25/10 ,  H01J37/32 ,  B05D3/06

    CPC classification number: C30B25/105 ,  C23C16/02 ,  C23C16/27 ,  C23C16/271 ,  H01J37/3233 ,  H01J2237/339 ,  Y10S427/106

    Abstract: In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

    Abstract translation: 在含有碳成分的等离子体在基板上合成金刚石的方法中，将包含钨作为热电子发射材料的长丝布置在室中的基板的上方。 电极设置在与灯丝分离并特别在灯丝上方的位置。 长丝至少暂时通电，其电位相对高于衬底的电位，同时电极至少暂时提供比丝的电位更高的电位。 因此，在细丝和衬底之间产生等离子体，同时电子从细丝移动到电极，用于在细丝和电极之间产生等离子体，从而在衬底上形成金刚石核。 此后，电子发射丝和电极的各自的电位彼此相等，用于从金刚石的核生长金刚石膜。

    Plasma reactor for diamond synthesis
    10.
    发明授权
    Plasma reactor for diamond synthesis 失效
    用于金刚石合成的等离子体反应器

    公开(公告)号：US4940015A

    公开(公告)日：1990-07-10

    申请号：US379586

    申请日：1989-07-13

    Applicant: Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

    Inventor： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

    IPC: C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C30B25/10 ,  C30B29/04 ,  H01J37/32

    CPC classification number: C23C16/274 ,  C23C16/26 ,  C23C16/277 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32284 ,  H01J37/32733 ,  H01J2237/339

    Abstract: A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.

    Abstract translation: 用于金刚石合成的等离子体反应器包括微波发生器，连接到微波发生器的波导，设置在波导内的天线，以将沿波导传播的微波导向反应室的内部，设置在反应室的上壁上方的微波窗口 波导，由（a）气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室，（b）侧壁中的反应气体入口和气体出口，以及（c）基板 保持器设置在与微波窗口相对的反应室内，以便朝向和远离微波窗口移动，以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。 仅在反应室的中心部分产生等离子体，从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。 用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。

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