Method and apparatus for determining a fingerprint of a performance parameter

    公开(公告)号:US10649342B2

    公开(公告)日:2020-05-12

    申请号:US16308835

    申请日:2017-06-22

    Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.

    EUV cleaning systems and methods thereof for an extreme ultraviolet light source

    公开(公告)号:US10606180B2

    公开(公告)日:2020-03-31

    申请号:US15453884

    申请日:2017-03-08

    Abstract: Methods and apparatus for in-situ incline cleaning an element disposed in a EUV generating chamber are disclosed. A capillary-based hydrogen radical generator is employed to form hydrogen radicals from hydrogen gas. The capillary-based hydrogen radical generator is resistively heated during operation and is oriented such that hydrogen radicals catalytically generated from the hydrogen gas are directed to a surface of the element to clean the surface.

    METROLOGY SENSOR, LITHOGRAPHIC APPARATUS AND METHOD FOR MANUFACTURING DEVICES

    公开(公告)号:US20200089135A1

    公开(公告)日:2020-03-19

    申请号:US16470905

    申请日:2017-11-15

    Abstract: Disclosed is a metrology sensor system, such as a position sensor. The system comprises an optical collection system configured to collect diffracted or scattered radiation from a metrology mark on a substrate, said collected radiation comprising at least one parameter-sensitive signal and noise signal which is not parameter-sensitive, a processing system operable to process the collected radiation; and a module housing. An optical guide is provided for guiding the at least one parameter-sensitive signal, separated from the noise signal, from the processing system to a detection system outside of the housing. A detector detects the separated at least one parameter-sensitive signal. An obscuration for blocking zeroth order radiation and/or a demagnifying optical system may be provided between the optical guide and the detector.

    Metrology Apparatus and Method for Determining a Characteristic of One or More Structures on a Substrate

    公开(公告)号:US20200081340A1

    公开(公告)日:2020-03-12

    申请号:US16556709

    申请日:2019-08-30

    Inventor: Nitesh PANDEY

    Abstract: Disclosed is a method and associated inspection apparatus for measuring a characteristic of interest relating to a structure on a substrate. The inspection apparatus uses measurement radiation comprising a plurality of wavelengths. The method comprises performing a plurality of measurement acquisitions of said structure, each measurement acquisition being performed using measurement radiation comprising a different subset of the plurality of wavelengths, to obtain a plurality of multiplexed measurement signals. The plurality of multiplexed measurement signals are subsequently de-multiplexed into signal components according to each of said plurality of wavelengths, to obtain a plurality of de-multiplexed measurement signals which are separated according to wavelength.

    TIME-DEPENDENT DEFECT INSPECTION APPARATUS
    500.
    发明申请

    公开(公告)号:US20200075287A1

    公开(公告)日:2020-03-05

    申请号:US16552991

    申请日:2019-08-27

    Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

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