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    Test device for detecting sealing performance of one-way valve
    51.
    发明授权
    Test device for detecting sealing performance of one-way valve 有权

    公开(公告)号：US12104984B2

    公开(公告)日：2024-10-01

    申请号：US17751686

    申请日：2022-05-24

    申请人： Tsinghua University

    发明人： Fei Guo ,  Qiyao Chen ,  Chong Xiang ,  Yijie Huang ,  Ganlin Cheng ,  Fan Zhang ,  Xiaohong Jia

    IPC分类号： G01M3/28 ,  G01M3/36

    CPC分类号： G01M3/2876 ,  G01M3/36

    摘要： Embodiments of the present disclosure belong to the field of valve sealing, and in particular, relate to a test device for simulating sealing performance of a one-way valve. A box is provided with a gas inlet pipe and a gas outlet pipe, the gas inlet pipe is communicated with a gas source, a detection device is communicated with the gas outlet pipe, the detection device is used to detect detection gas input into the box by the gas source, a sleeve is connected to the gas inlet pipe, one end of the sleeve is communicated with the gas source, the other end of the sleeve has a gas outlet, one end of a fitting piece is used to block the gas outlet, and the other end of the fitting piece is connected to a driving member, which is used to drive the fitting piece to move and rotate.

    Well path drilling trajectory and control for geosteering
    52.
    发明授权
    Well path drilling trajectory and control for geosteering 有权

    公开(公告)号：US12104489B2

    公开(公告)日：2024-10-01

    申请号：US17619784

    申请日：2020-02-10

    申请人： Landmark Graphics Corporation

    发明人： Raja Vikram Raj Pandya ,  Srinath Madasu ,  Keshava Prasad Rangarajan ,  Shashi Dande ,  Yashas Malur Saidutta

    IPC分类号： E21B7/04 ,  E21B44/02

    CPC分类号： E21B7/04 ,  E21B44/02

    摘要： Geosteering can be used in a drilling operation to create a wellbore that is used to extract hydrocarbons from a defined zone within the subterranean formation. According to some aspects, generating paths for the wellbore may include using path-planning protocols and pure-pursuit protocols. The pure-pursuit protocol may be executed to output a plurality of candidate drilling paths. The output may also include control parameters for controlling the drill bit. A trajectory optimizer may determine a result of multi-objective functions for each candidate path. A cost function may represent a cost or loss associated with a candidate path. Additionally, the trajectory optimizer may perform an optimization protocol, such as Bayesian optimization, on the cost functions to determine which candidate path to select. The selected candidate path may correspond to new control parameters for controlling the drill bit to reach the target location.

    Self-regulating damper unit
    56.
    发明授权
    Self-regulating damper unit 有权

    公开(公告)号：US12103490B2

    公开(公告)日：2024-10-01

    申请号：US17999597

    申请日：2021-05-21

    申请人： Stabilus GmbH

    发明人： Lars Löhken ,  Raphael Piroth ,  Markus Müller ,  Ulrich Probst ,  Marcus Weber

    IPC分类号： B60R22/28

    CPC分类号： B60R22/28 ,  B60R2022/282 ,  B60R2022/288

    摘要： A self-regulating damper unit comprising a cylinder having a first working chamber and a second working chamber, a piston, a piston rod, and a through-hole between the first working chamber and the second working chamber. The damper unit also comprises a shiftable weight which modifies a passage cross-section of the through-hole. The shiftable weight is movably mounted such that retardation of the piston causes enlargement of the passage cross-section. A seat belt unit comprises a seat belt and the damper unit.

    Semiconductor structure and method for manufacturing same
    57.
    发明授权
    Semiconductor structure and method for manufacturing same 有权

    公开(公告)号：US12101924B2

    公开(公告)日：2024-09-24

    申请号：US17671019

    申请日：2022-02-14

    申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

    发明人： Deyuan Xiao

    IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H10B12/00

    CPC分类号： H10B12/09 ,  H01L29/66742 ,  H01L29/78642 ,  H10B12/0335 ,  H10B12/05 ,  H10B12/315 ,  H10B12/482 ,  H10B12/50

    摘要： A semiconductor structure and a method for manufacturing same. The semiconductor structure includes: a semiconductor base, including a logical device region and a memory region; a bit line located in the memory region and an electrical contact layer located in the logical device region, which are disposed in a same layer; a first semiconductor channel located on the bit line and a second semiconductor channel located on the electrical contact layer, which are disposed in a same layer; a word line and a gate disposed in a same layer; a capacitor structure, in contact with a second doped region of the first semiconductor channel; an electrical connection structure, in contact with the fourth doped region of the second semiconductor channel; and a dielectric layer, located between the bit line and the word line, and on a side of the word line away from the semiconductor base.