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    Combinatorial Processing Using High Deposition Rate Sputtering
    51.
    发明申请
    Combinatorial Processing Using High Deposition Rate Sputtering 有权
    使用高沉积速率溅射的组合处理

    公开(公告)号：US20130167773A1

    公开(公告)日：2013-07-04

    申请号：US13339648

    申请日：2011-12-29

    Applicant: Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

    Inventor： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

    IPC: C23C14/34

    CPC classification number: C23C14/044 ,  C23C14/3464

    Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

    Abstract translation: 公开了用于将沉积层沉积到基底上的高沉积速率溅射的装置和方法。 设备通常包括处理室; 设置在处理室内的一个或多个溅射源，其中每个溅射源包括溅射靶; 设置在所述处理室内的衬底支撑件; 位于所述溅射源和所述衬底之间的屏蔽罩，所述屏蔽件包括位于每个溅射源下方的孔; 以及连接到所述基板支撑件的输送系统，其能够定位所述基板，使得所述基板上的多个位置隔离区域中的一个可以通过位于每个所述溅射源下方的所述孔暴露于溅射材料; 其中溅射靶和衬底之间的间距小于100mm。 该装置能够在衬底上的位置分离区域上实现高沉积速率溅射。

    Method and system of improved uniformity testing
    53.
    发明授权
    Method and system of improved uniformity testing 失效

    公开(公告)号：US08370096B2

    公开(公告)日：2013-02-05

    申请号：US12957354

    申请日：2010-11-30

    Applicant: Charlene Chen ,  Tony P. Chiang ,  Chi-I Lang ,  Yun Wang

    Inventor： Charlene Chen ,  Tony P. Chiang ,  Chi-I Lang ,  Yun Wang

    IPC: G06F19/00

    CPC classification number: H01L22/20 ,  G01N21/59 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L22/12 ,  H01L29/1606

    Abstract: A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

    SYSTEM AND METHOD FOR INCREASING PRODUCTIVITY OF ORGANIC LIGHT EMITTING DIODE MATERIAL SCREENING
    54.
    发明申请
    SYSTEM AND METHOD FOR INCREASING PRODUCTIVITY OF ORGANIC LIGHT EMITTING DIODE MATERIAL SCREENING 有权
    有机发光二极管材料筛选生产率的系统和方法

    公开(公告)号：US20130023066A1

    公开(公告)日：2013-01-24

    申请号：US13624102

    申请日：2012-09-21

    Applicant: Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

    Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

    IPC: H01L21/66

    CPC classification number: H01L51/0031 ,  H01L51/56

    Abstract: A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

    Abstract translation: 提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试 所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试 衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

    Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers
    58.
    发明授权
    Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers 失效
    用于选择性沉积钴基封端/阻挡层的集中化学镀溶液

    公开(公告)号：US07658790B1

    公开(公告)日：2010-02-09

    申请号：US11773316

    申请日：2007-07-03

    Applicant: Alexander Gorer ,  Tony Chiang ,  Chi-I Lang

    Inventor： Alexander Gorer ,  Tony Chiang ,  Chi-I Lang

    IPC: C23C18/34

    CPC classification number: C23C18/34 ,  C23C18/50

    Abstract: An electroless solution for deposition of a cobalt-based alloy on a substrate is provided. The electroless solution may be formed by mixing first and second solutions, with the first and second solutions being prepared from concentrated precursors. In one embodiment, the first solution contains a cobalt (Co) ion source and a complexing and deposition selectivity agent. In one embodiment, the cobalt concentration in the first solution is at least 90 millimoles per liter. The second solution contains a reducing agent. In one embodiment, the reducing agent is dimethylamineborane (DMAB) having a concentration of at least 10 grams per liter. In other embodiments, the first solution also contains a tungsten (W) ion source, and either the first or second solution also contains a phosphorous (P) ion source.

    Abstract translation: 提供了一种用于在基底上沉积钴基合金的无电溶液。 化学溶液可以通过混合第一和第二溶液形成，第一和第二溶液由浓缩的前体制备。 在一个实施方案中，第一溶液含有钴（Co）离子源和络合和沉积选择剂。 在一个实施方案中，第一溶液中的钴浓度为至少90毫摩尔/升。 第二种溶液含有还原剂。 在一个实施方案中，还原剂是浓度为至少10克/升的二甲胺硼烷（DMAB）。 在其它实施方案中，第一溶液还含有钨（W）离子源，并且第一或第二溶液也含有磷（P）离子源。

    Pulsed bias having high pulse frequency for filling gaps with dielectric material
    59.
    发明授权
    Pulsed bias having high pulse frequency for filling gaps with dielectric material 有权
    具有高脉冲频率的脉冲偏压，用于填充与电介质材料的间隙

    公开(公告)号：US07514375B1

    公开(公告)日：2009-04-07

    申请号：US11500799

    申请日：2006-08-08

    Applicant: Sunil Shanker ,  Chi-I Lang

    Inventor： Sunil Shanker ,  Chi-I Lang

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/31608 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76837

    Abstract: During bottom filling of high aspect ratio gaps and trenches in an integrated circuit substrate using HDP-CVD, a pulsed HF bias is applied to the substrate. In some embodiments, pulsed HF bias is applied to the substrate during etching operations. The pulsed bias typically has a pulse frequency in a range of about from 500 Hz to 20 kHz and a duty cycle in a range of about from 0.1 to 0.95.

    Abstract translation: 在使用HDP-CVD的集成电路衬底中的高纵横比间隙和沟槽的底部填充期间，将脉冲HF偏压施加到衬底。 在一些实施例中，在蚀刻操作期间将脉冲HF偏压施加到衬底。 脉冲偏压通常具有在约500Hz至20kHz的范围内的脉冲频率和约0.1至0.95的范围内的占空比。

    METHODS FOR PROCESSING A SUBSTRATE HAVING A BACKSIDE LAYER
    60.
    发明申请
    METHODS FOR PROCESSING A SUBSTRATE HAVING A BACKSIDE LAYER 审中-公开
    用于处理具有背层的基板的方法

    公开(公告)号：US20090075095A1

    公开(公告)日：2009-03-19

    申请号：US12208865

    申请日：2008-09-11

    Applicant: Igor Ivanov ,  Tony Chiang ,  Chi-I Lang

    Inventor： Igor Ivanov ,  Tony Chiang ,  Chi-I Lang

    IPC: B32B27/30 ,  B32B9/00 ,  B44C1/22 ,  B05D1/18 ,  C25D5/02

    CPC classification number: C25D5/028 ,  C25D5/34 ,  C25D7/12 ,  H01L21/6835 ,  Y10T428/31855

    Abstract: Methods for processing a substrate utilizing a backside layer are presented including: receiving a substrate, the substrate including a front side and a backside; forming the backside layer on the backside of the substrate; and performing at least one processing operation on the front side of the substrate, wherein the backside layer protects the backside of the substrate during the performing the at least one processing operation. In some embodiments, methods further include cross-linking the backside layer such that the backside layer is stabilized. In some embodiments, methods further include: functionalizing the backside layer, where the functionalizing alters a chemical characteristic of the backside layer, and where the functionalizing includes a functional group such as: a hydroxyl group, an amino group, a mercapto group, a fluorine group, a chlorine group, an alkene group, an aryle group, and a carboxy group.

    Abstract translation: 提供了利用背面层处理衬底的方法，包括：接收衬底，所述衬底包括正面和背面; 在衬底的背面形成背面层; 以及在所述基板的前侧执行至少一个处理操作，其中所述背面层在执行所述至少一个处理操作期间保护所述基板的背面。 在一些实施方案中，方法还包括交联背面层，使得背侧层是稳定的。 在一些实施方案中，方法还包括：功能化背面层，其中官能化改变背面层的化学特性，并且官能化包括官能团如羟基，氨基，巯基，氟 基团，氯基团，烯烃基团，芳基基团和羧基基团。

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