公开(公告)号：US08920618B2

公开(公告)日：2014-12-30

申请号：US13339648

申请日：2011-12-29

申请人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

发明人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

IPC分类号： C23C14/54

CPC分类号： C23C14/044 ,  C23C14/3464

摘要： Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

摘要翻译： 公开了用于将沉积层沉积到基底上的高沉积速率溅射的装置和方法。 设备通常包括处理室; 设置在处理室内的一个或多个溅射源，其中每个溅射源包括溅射靶; 设置在所述处理室内的衬底支撑件; 位于所述溅射源和所述衬底之间的屏蔽罩，所述屏蔽件包括位于每个溅射源下方的孔; 以及连接到所述基板支撑件的输送系统，其能够定位所述基板，使得所述基板上的多个位置隔离区域中的一个可以通过位于每个所述溅射源下方的所述孔暴露于溅射材料; 其中溅射靶和衬底之间的间距小于100mm。 该装置能够在衬底上的位置分离区域上实现高沉积速率溅射。

公开(公告)号：US20130167773A1

公开(公告)日：2013-07-04

申请号：US13339648

申请日：2011-12-29

申请人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

发明人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

IPC分类号： C23C14/34

CPC分类号： C23C14/044 ,  C23C14/3464

摘要： Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

摘要翻译： 公开了用于将沉积层沉积到基底上的高沉积速率溅射的装置和方法。 设备通常包括处理室; 设置在处理室内的一个或多个溅射源，其中每个溅射源包括溅射靶; 设置在所述处理室内的衬底支撑件; 位于所述溅射源和所述衬底之间的屏蔽罩，所述屏蔽件包括位于每个溅射源下方的孔; 以及连接到所述基板支撑件的输送系统，其能够定位所述基板，使得所述基板上的多个位置隔离区域中的一个可以通过位于每个所述溅射源下方的所述孔暴露于溅射材料; 其中溅射靶和衬底之间的间距小于100mm。 该装置能够在衬底上的位置分离区域上实现高沉积速率溅射。

公开(公告)号：US20130101749A1

公开(公告)日：2013-04-25

申请号：US13281299

申请日：2011-10-25

申请人： Hong Sheng Yang ,  Chi-I Lang

发明人： Hong Sheng Yang ,  Chi-I Lang

IPC分类号： C23C14/35

CPC分类号： C23C14/351 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458

摘要： In one aspect of the invention, a process chamber is provided. The process chamber includes a plurality of sputter guns with a target and a main magnet affixed to one end of each of the sputter guns. A substrate support is disposed at a distance from the plurality of sputter guns. An auxiliary magnet is disposed near the substrate. The auxiliary magnet surrounds an outer peripheral surface of the substrate support. In alternative embodiments the magnet may be disposed in a plate or holder disposed below or above the substrate support. In additional embodiments, the auxiliary magnet may be embedded within the substrate support. Furthermore, the auxiliary magnet can either be permanent magnets or electromagnets. A method of performing a deposition process is also included.

摘要翻译： 在本发明的一个方面，提供一种处理室。 处理室包括多个具有目标物体的溅射枪和固定在每个溅射枪的一端的主磁体。 衬底支撑件设置在距离多个溅射枪一定距离处。 辅助磁铁设置在基板附近。 辅助磁体围绕基板支撑件的外周表面。 在替代实施例中，磁体可以设置在设置在基板支撑件下方或上方的板或保持器中。 在另外的实施例中，辅助磁体可以嵌入衬底支撑件内。 此外，辅助磁体可以是永磁体或电磁体。 还包括执行沉积工艺的方法。

公开(公告)号：US09175382B2

公开(公告)日：2015-11-03

申请号：US13281316

申请日：2011-10-25

申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

公开(公告)号：US20130101750A1

公开(公告)日：2013-04-25

申请号：US13281316

申请日：2011-10-25

申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

IPC分类号： C23C14/34

CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

公开(公告)号：US20120258255A1

公开(公告)日：2012-10-11

申请号：US13081042

申请日：2011-04-06

申请人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

发明人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

IPC分类号： C23C14/00

CPC分类号： C23C14/34 ,  C23C14/54 ,  C23C14/548 ,  H01J37/3447

摘要： The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

摘要翻译： 本公开内容包括用于控制具有共溅射物理气相沉积的膜组合物的方法。 在一个实施方案中，该方法包括：将第一和第二PVD枪定位在衬底上方，选择具有第一和第二组物理特性的第一和第二准直器，将第一和第二准直器定位在第一和第二PVD枪和衬底之间，溅射 在施加第一功率和第二功率时，来自第一和第二PVD枪的至少一种材料通过第一和第二准直器，其中第一PVD枪具有来自第一准直器的第一沉积速率，而第二PVD 枪在第二功率下具有来自第二准直器的第二沉积速率。

公开(公告)号：US08906207B2

公开(公告)日：2014-12-09

申请号：US13081042

申请日：2011-04-06

申请人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

发明人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

IPC分类号： C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/34 ,  C23C14/54 ,  C23C14/548 ,  H01J37/3447

摘要： The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

摘要翻译： 本公开内容包括用于控制具有共溅射物理气相沉积的膜组合物的方法。 在一个实施方案中，该方法包括：将第一和第二PVD枪定位在衬底上方，选择具有第一和第二组物理特性的第一和第二准直器，将第一和第二准直器定位在第一和第二PVD枪和衬底之间，溅射 在施加第一功率和第二功率时，来自第一和第二PVD枪的至少一种材料通过第一和第二准直器，其中第一PVD枪具有来自第一准直器的第一沉积速率，而第二PVD 枪在第二功率下具有来自第二准直器的第二沉积速率。

公开(公告)号：US08779407B2

公开(公告)日：2014-07-15

申请号：US13367662

申请日：2012-02-07

申请人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

发明人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

IPC分类号： H01L29/02

CPC分类号： C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

公开(公告)号：US20130270104A1

公开(公告)日：2013-10-17

申请号：US13444100

申请日：2012-04-11

申请人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

发明人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

IPC分类号： C23C14/35

CPC分类号： C23C14/042 ,  C23C14/352 ,  C23C14/548

摘要： Embodiments of the present invention provide methods and apparatuses using sputtering from a mosaic sputtering target for depositing layers onto a substrate, and provide the capability of depositing layers onto site isolated regions of the substrate in a combinatorial manner. A sputtering source is provided including a sputtering target comprising a first region having a first composition, and a second region having a second composition. A selection mechanism is capable of selecting a composition of emitted material from the sputtering source that can range from 0% to 100% of the first composition and from 0% to 100% of the second composition. The selection mechanism can comprise a movable magnetron or a moveable aperture.

摘要翻译： 本发明的实施方案提供了使用来自马赛克溅射靶的溅射的方法和装置，用于将层沉积到衬底上，并提供以组合方式将层沉积到衬底的位置隔离区上的能力。 提供溅射源，其包括溅射靶，其包括具有第一组成的第一区域和具有第二组成的第二区域。 选择机构能够从溅射源选择发射材料的组成，该组成可以在第一组分的0％至100％和第二组合物的0％至100％的范围内。 选择机构可以包括可移动磁控管或可移动孔。

公开(公告)号：US08974649B2

公开(公告)日：2015-03-10

申请号：US13316882

申请日：2011-12-12

申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽可以通过低通滤波器进一步连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。