公开(公告)号：US07429040B2

公开(公告)日：2008-09-30

申请号：US11183837

申请日：2005-07-19

Applicant: Daisuke Ueda ,  Akira Kosugi ,  Shigeru Okazaki ,  Takanori Kanda ,  Kenichi Hosoi

Inventor： Daisuke Ueda ,  Akira Kosugi ,  Shigeru Okazaki ,  Takanori Kanda ,  Kenichi Hosoi

IPC: B65H3/52

CPC classification number: B65H3/5261 ,  B65H3/0623 ,  B65H3/0669 ,  B65H2515/40 ,  B65H2220/01

Abstract: A feeding apparatus including a feeding roller for conveying a sheet, a separation roller for conveying the sheet in a reverse direction, a transmission mechanism for transmitting the rotational force to the feeding roller, a limited force reverse transmission mechanism for transmitting the rotational force to the separation roller through a torque limiter, a forced reverse transmission mechanism for directly transmitting the rotational force to the separation roller, a temperature detector and a controller, wherein the controller controls the separation roller to receive rotational force through the forced reverse transmission mechanism after the limited force reverse transmission mechanism transmits the rotational force to the separation roller, then allows the limited force reverse transmission mechanism to transmit the rotational force to the separation roller, or to rotate the feeding via the transmission mechanism and the limited force transmission mechanism to transmit the rotational force to the separation roller.

公开(公告)号：US20080128619A1

公开(公告)日：2008-06-05

申请号：US10589619

申请日：2004-02-16

Applicant: Shinji Yoshida ,  Daisuke Ueda

Inventor： Shinji Yoshida ,  Daisuke Ueda

IPC: G01J1/02

CPC classification number: H01C7/045 ,  G01J5/20 ,  H01C7/06 ,  H01L27/16 ,  H01L31/09 ,  H01L37/00 ,  H01L41/094 ,  H04N5/33

Abstract: To provide an infrared imaging device having a higher temperature resolution that includes a plurality of pixel cells (1a-1d) arranged one-dimensionally or two-dimensionally, in which each pixel cell includes a thermal resistor composed of a strongly-correlated electron material.

Abstract translation: 为了提供具有更高温度分辨率的红外成像装置，其包括一维或二维排列的多个像素单元（1a-1d），其中每个像素单元包括由强相关电子 材料。

公开(公告)号：US07375407B2

公开(公告)日：2008-05-20

申请号：US11271833

申请日：2005-11-14

Applicant: Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

Inventor： Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC: H01L29/47

CPC classification number: H01L29/66143 ,  H01L29/872

Abstract: A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.

Abstract translation: 肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。 彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。

公开(公告)号：US20080112448A1

公开(公告)日：2008-05-15

申请号：US11979877

申请日：2007-11-09

Applicant: Tetsuzo UEDA ,  Daisuke UEDA

Inventor： Tetsuzo UEDA ,  Daisuke UEDA

IPC: H01S5/323

CPC classification number: H01S5/32341 ,  H01S5/021 ,  H01S5/2201

Abstract: A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers being made of group III nitride. The semiconductor has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleaved facet, the cleaved facet forming a facet mirror.

Abstract translation: 氮化物半导体激光二极管包括：由主表面的平面取向为{100}面的由硅制成的衬底; 以及半导体，其包括形成在所述基板上并包括有源层的多个半导体层，所述多个半导体层中的每一个由III族氮化物制成。 半导体具有平行于{011}平面的平面，该平面是作为切割面的硅的平面取向，切割面形成小平面镜。

公开(公告)号：US20080029701A1

公开(公告)日：2008-02-07

申请号：US11774088

申请日：2007-07-06

Applicant: Kazutoshi ONOZAWA ,  Daisuke UEDA

Inventor： Kazutoshi ONOZAWA ,  Daisuke UEDA

IPC: H01L31/12 ,  B60Q1/04

CPC classification number: B60Q1/0023 ,  G01S7/4811 ,  G01S7/4918 ,  G01S7/493 ,  G01S7/499 ,  G01S17/89 ,  G01S17/936 ,  H01L27/14643 ,  H01L27/148

Abstract: The invention provides a night-vision imaging apparatus including: a light emission unit that emits infrared light; a solid-state imaging device that converts the infrared light into a first signal; a light-emission control unit that allows the light emission unit to emit the infrared light which is modulated according to a temporally pseudo-random first modulation; and an extraction unit that extracts, according to the first modulation, a signal corresponding to the infrared light emitted by the light emission unit from the first signal.

Abstract translation: 本发明提供了一种夜视成像装置，包括：发射红外光的发光单元; 将所述红外光转换为第一信号的固态成像装置; 发光控制单元，其允许发光单元发射根据时间上伪随机的第一调制被调制的红外光; 以及提取单元，根据第一调制，从第一信号中提取与由发光单元发射的红外光相对应的信号。

公开(公告)号：US20070257595A1

公开(公告)日：2007-11-08

申请号：US11620076

申请日：2007-01-05

Applicant: Yutaka Hirose ,  Daisuke Ueda

Inventor： Yutaka Hirose ,  Daisuke Ueda

IPC: H01J99/00

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T29/49002

Abstract: Provided is an electron emitting device which can achieve high electron emission efficiency even in the case where excitation energy is low. The device includes a carbon nanotube layer which is formed on an SiC substrate and is made up of plural carbon nanotubes vertically oriented with respect to a surface of the SiC substrate; an MgO layer which is formed on and touches the carbon nanotube layer; an ohmic electrode which is connected to the carbon nanotube layer; an electrode which is facing the MgO layer with an air-gap between the MgO layer and the electrode; and a voltage source which applies a voltage between the electrode and the ohmic electrode.

Abstract translation: 提供了即使在激发能量低的情况下也能够实现高电子发射效率的电子发射器件。 该装置包括碳纳米管层，其形成在SiC衬底上并且由相对于SiC衬底的表面垂直取向的多个碳纳米管构成; 形成在碳纳米管层上并与其接触的MgO层; 连接到碳纳米管层的欧姆电极; 在MgO层和电极之间具有气隙的面向MgO层的电极; 以及在电极和欧姆电极之间施加电压的电压源。

公开(公告)号：US20070170463A1

公开(公告)日：2007-07-26

申请号：US11647218

申请日：2006-12-29

Applicant: Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

Inventor： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC: H01L31/00

CPC classification number: H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

Abstract: A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

Abstract translation: 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

公开(公告)号：US20070026676A1

公开(公告)日：2007-02-01

申请号：US11194419

申请日：2005-08-01

Applicant: Ming Li ,  Xinbing Liu ,  Hiroyuki Sakai ,  Masaaki Nishijima ,  Daisuke Ueda

Inventor： Ming Li ,  Xinbing Liu ,  Hiroyuki Sakai ,  Masaaki Nishijima ,  Daisuke Ueda

IPC: H01L21/302

CPC classification number: B23K26/0624 ,  B23K26/40 ,  B23K2103/50

Abstract: A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire substrate such that each focused pulse of laser light ablates a volume of the sapphire substrate having a depth less than the substrate thickness. The beam spot of the focused laser light pulses is scanned over a via portion of the first surface of the sapphire substrate. The sapphire substrate is moved in a direction substantially normal to the first surface to control the volume of the sapphire substrate ablated by each pulse of laser light to be substantially constant. The pulsing and scanning steps are repeated until the via is formed extending from the first surface to the second surface of the sapphire substrate.

Abstract translation: 一种在具有包括超快脉冲激光源的激光加工系统的蓝宝石衬底中形成通孔的方法。 提供蓝宝石衬底。 激光的脉冲基本上聚焦到蓝宝石衬底的第一表面上的束斑上，使得每个聚焦的激光脉冲消除了具有小于衬底厚度的深度的蓝宝石衬底的体积。 聚焦激光脉冲的束斑在蓝宝石衬底的第一表面的通孔部分上扫描。 蓝宝石衬底沿着基本上垂直于第一表面的方向移动，以控制由每个激光脉冲消融的蓝宝石衬底的体积基本恒定。 重复脉冲和扫描步骤，直到形成从蓝宝石衬底的第一表面延伸到第二表面的通孔。

公开(公告)号：US07133431B2

公开(公告)日：2006-11-07

申请号：US10629670

申请日：2003-07-30

Applicant: Kazutoshi Onozawa ,  Tetsuzo Ueda ,  Daisuke Ueda

Inventor： Kazutoshi Onozawa ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC: H01S5/00

CPC classification number: H01S5/02252 ,  G11B7/1275 ,  G11B7/22 ,  G11B2007/0006 ,  H01L24/95 ,  H01L2224/95085 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/10329 ,  H01L2924/10349 ,  H01L2924/12042 ,  H01L2924/14 ,  H01S5/02236 ,  H01S5/4031 ,  H01L2924/00

Abstract: A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser chip in the form of a function block, which emits an infrared laser beam. Disposed in the second recessed portion is a second semiconductor laser chip in the form of a function block, which emits a red laser beam.

Abstract translation: 半导体激光器件包括由例如硅制成并且在其主表面中形成有彼此间隔一定距离的第一和第二凹部的衬底。 设置在第一凹部中的是发射红外激光束的功能块形式的第一半导体激光器芯片。 设置在第二凹部中的是发射红色激光束的功能块形式的第二半导体激光器芯片。

公开(公告)号：US20060203860A1

公开(公告)日：2006-09-14

申请号：US11352948

申请日：2006-02-13

Applicant: Kenichi Inoue ,  Kazuhiko Yamanaka ,  Kazutoshi Onozawa ,  Daisuke Ueda

Inventor： Kenichi Inoue ,  Kazuhiko Yamanaka ,  Kazutoshi Onozawa ,  Daisuke Ueda

IPC: H01S3/10

CPC classification number: H01S5/02292 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/02248 ,  H01S5/4012 ,  H01S5/4087

Abstract: A laser module includes a substrate 1, a first laser element 2 placed on the substrate 1, a second laser element 3 placed with an output surface opposed to the first laser element 2 on the substrate 1, and a mirror 7 placed between the first laser element 2 and the second laser element 3. The mirror 7 has a reflective surface capable of reflecting output light from the first laser element 2 or the second laser element 3 in a predetermined direction, and is placed so as to move or rotate between a first position capable of reflecting the output light from the first laser element 2 and a second position capable of reflecting the output light from the second laser element 3. Thus, a laser module can be provided in which high precision, low cost, and miniaturization can be realized.

Abstract translation: 激光模块包括基板1，放置在基板1上的第一激光元件2，在基板1上设置有与第一激光元件2相对的输出面的第二激光元件3，以及配置在第一激光器 元件2和第二激光元件3。 反射镜7具有反射表面，该反射表面能够沿预定方向反射来自第一激光元件2或第二激光元件3的输出光，并且能够在能够反射来自第一激光元件2或第二激光元件3的输出光的第一位置之间移动或旋转 第一激光元件2和能够反射来自第二激光元件3的输出光的第二位置。 因此，可以提供可以实现高精度，低成本和小型化的激光模块。