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    PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS
    52.
    发明申请
    PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS 审中-公开
    等离子体加工设备和用于调谐电机的衬套组件

    公开(公告)号：US20120018402A1

    公开(公告)日：2012-01-26

    申请号：US13184562

    申请日：2011-07-17

    Applicant: James D. Carducci ,  Zhigang Chen ,  Shahid Rauf ,  Kenneth S. Collins

    Inventor： James D. Carducci ,  Zhigang Chen ,  Shahid Rauf ,  Kenneth S. Collins

    IPC: C23F1/00 ,  B32B3/24 ,  C23C14/48 ,  B32B1/08 ,  C23F1/08 ,  H05H1/24

    CPC classification number: H01J37/32623 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32495 ,  H01L21/67069 ,  Y10T428/13

    Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

    Abstract translation: 本发明公开了一种等离子体处理装置，其包括室盖，室主体和支撑组件。 室主体限定用于容纳等离子体的处理容积，用于支撑室盖。 腔室主体包括室侧壁，底壁和衬套组件。 腔室侧壁和底壁限定用于容纳等离子体的处理体积。 设置在处理容积内的衬套组件包括形成在其上的两个或更多个槽，用于提供轴对称RF电流路径。 支撑组件支撑用于在室主体内进行加工的基板。 利用具有多个对称槽的衬套组件，本发明可以防止其电磁场为方位角不对称。

    RECONFIGURABLE MULTI-ZONE GAS DELIVERY HARDWARE FOR SUBSTRATE PROCESSING SHOWERHEADS
    53.
    发明申请
    RECONFIGURABLE MULTI-ZONE GAS DELIVERY HARDWARE FOR SUBSTRATE PROCESSING SHOWERHEADS 有权
    可重新配置的多区域气体输送硬件，用于基板加工淋浴

    公开(公告)号：US20110162800A1

    公开(公告)日：2011-07-07

    申请号：US12899062

    申请日：2010-10-06

    Applicant: Hamid Noorbakhsh ,  James D. Carducci

    Inventor： Hamid Noorbakhsh ,  James D. Carducci

    IPC: C23F1/08 ,  B05B15/00 ,  B23P17/00

    CPC classification number: C23C16/45565 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T29/49716

    Abstract: Reconfigurable showerheads used in process chambers for substrate processing are provided herein. In some embodiments, a reconfigurable showerhead may include a body having one or more plenums disposed therein; and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones. In some embodiments, a substrate processing system may include a process chamber having a reconfigurable showerhead coupled to a gas supply for providing one or more process gases to the process chamber, the reconfigurable showerhead including a body having one or more plenums disposed therein and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones.

    Abstract translation: 本文提供了用于基板处理的处理室中的可重新配置的喷头。 在一些实施例中，可重新配置的喷头可以包括具有设置在其中的一个或多个增压室的主体; 以及一个或多个插入件，其构造成设置在所述一个或多个增压室内，其中所述一个或多个插入件将所述可重新配置的喷头分成多个区域。 在一些实施例中，衬底处理系统可以包括处理室，其具有耦合到气体供应的可重新配置的喷头，用于向处理室提供一个或多个处理气体，所述可重新配置的喷头包括具有设置在其中的一个或多个增压室的主体， 更多的插入件被配置为设置在一个或多个增压室内，其中一个或多个插入件将可重新配置的喷头分成多个区域。

    APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES
    55.
    发明申请
    APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES 有权
    有效去除蚀刻基板上的卤素残留的装置

    公开(公告)号：US20100133255A1

    公开(公告)日：2010-06-03

    申请号：US12572786

    申请日：2009-10-02

    Applicant: Kenneth J. Bahng ,  Matthew F. Davis ,  Travis Morey ,  James D. Carducci

    Inventor： Kenneth J. Bahng ,  Matthew F. Davis ,  Travis Morey ,  James D. Carducci

    IPC: B08B7/00 ,  B32B1/00 ,  B32B3/06 ,  B08B5/04

    CPC classification number: H01L21/02071 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/68728 ,  H01L21/68785 ,  Y10T428/24008 ,  Y10T428/24628

    Abstract: An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

    Abstract translation: 提供了用于从基板除去挥发性残留物的装置。 在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。 用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突起，适合于将温度控制基座支撑在腔体的凸缘上， 从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

    GAS FLOW DIFFUSER
    58.
    发明申请
    GAS FLOW DIFFUSER 失效
    气体流动扩散器

    公开(公告)号：US20080230518A1

    公开(公告)日：2008-09-25

    申请号：US11689031

    申请日：2007-03-21

    Applicant: Paul Brillhart ,  Daniel J. Hoffman ,  James D. Carducci ,  Xiaoping Zhou ,  Matthew L. Miller

    Inventor： Paul Brillhart ,  Daniel J. Hoffman ,  James D. Carducci ,  Xiaoping Zhou ,  Matthew L. Miller

    IPC: H01L21/306 ,  C23F1/00 ,  F16L41/00

    CPC classification number: C23C16/45565 ,  C23C16/45502 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069 ,  Y10T137/85938

    Abstract: A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distribution assembly having an asymmetrical distribution of gas injection ports. In another embodiment, a method for vacuum processing a substrate is provided that includes disposing a substrate on a substrate support within in a processing chamber, flowing process gas into laterally into a space defined above a gas distribution plate positioned in the processing chamber over the substrate, and processing the substrate in the presence of the processing gas.

    Abstract translation: 提供了一种用于提供流入处理室的方法和装置。 在一个实施例中，提供真空处理室，其包括具有内部容积的室主体，设置在内部容积中的基板支撑件和具有气体注入端口的不对称分布的气体分配组件。 在另一个实施例中，提供了一种用于真空处理基板的方法，其包括将基板设置在处理室内的基板支撑件上，使处理气体横向流入位于位于处理室中的位于基板上的气体分配板上方的空间 在处理气体的存在下处理基板。

    Capacitively coupled plasma reactor with uniform radial distribution of plasma
    59.
    发明授权
    Capacitively coupled plasma reactor with uniform radial distribution of plasma 有权
    电容耦合等离子体反应器具有均匀的等离子体径向分布

    公开(公告)号：US06900596B2

    公开(公告)日：2005-05-31

    申请号：US10235988

    申请日：2002-09-04

    Applicant: Jang Gyoo Yang ,  Daniel J. Hoffman ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Melissa Hagen ,  Matthew L. Miller ,  Kang-Lie Chiang ,  Gerardo A. Delgadino

    Inventor： Robert B. Hagen

    IPC: H01J37/32 ,  H01J7/24

    CPC classification number: H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    Abstract: A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.

    Abstract translation: 用于处理半导体晶片的等离子体反应器包括限定腔室的侧壁和顶棚顶板，腔室内的工件支撑阴极具有面向天花板的工作表面，用于支撑半导体工件，用于将工艺气体引入到工作气体入口 室和具有偏置功率频率的RF偏置功率发生器。 在工作表面有一个偏置的馈电点，RF导体连接在RF偏置发电机和工作表面的偏置功率馈电点之间。 介质套管围绕RF导体的一部分，套筒具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供 一种提高工作表面等离子体离子密度均匀性的电抗。 根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF耦合环，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以增强 等离子体离子密度在工件周边附近。

    Magnetic barrier for plasma in chamber exhaust
    60.
    发明授权
    Magnetic barrier for plasma in chamber exhaust 失效
    室内排气等离子体的磁屏障

    公开(公告)号：US06863835B1

    公开(公告)日：2005-03-08

    申请号：US09557990

    申请日：2000-04-25

    Applicant: James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

    Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

    IPC: H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B44C1/22 ,  C23C16/00 ,  H01L21/306

    CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

    Abstract: A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.

    Abstract translation: 一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。 腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。 由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内 从到达排气泵。 磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。 因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。 或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

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