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    Magnetic barrier for plasma in chamber exhaust
    1.
    发明授权
    Magnetic barrier for plasma in chamber exhaust 失效
    室内排气等离子体的磁屏障

    公开(公告)号：US06863835B1

    公开(公告)日：2005-03-08

    申请号：US09557990

    申请日：2000-04-25

    申请人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

    发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

    IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B44C1/22 ,  C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.

    摘要翻译： 一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。 腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。 由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内 从到达排气泵。 磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。 因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。 或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

    Magnetic barrier for plasma in chamber exhaust
    2.
    发明授权
    Magnetic barrier for plasma in chamber exhaust 有权
    室内排气等离子体的磁屏障

    公开(公告)号：US06773544B2

    公开(公告)日：2004-08-10

    申请号：US09775173

    申请日：2001-01-31

    申请人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

    发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

    IPC分类号： H01L21302

    CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

    摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

    摘要翻译： 本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。 能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出 过程区域。 一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。 磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

    Double slit-valve doors for plasma processing
    5.
    发明授权
    Double slit-valve doors for plasma processing 失效
    用于等离子体处理的双切口阀门

    公开(公告)号：US06647918B1

    公开(公告)日：2003-11-18

    申请号：US09711191

    申请日：2000-11-13

    申请人： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

    发明人： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

    IPC分类号： C23C1600

    CPC分类号： H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

    摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

    摘要翻译： 在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。 内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性 通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。 内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道 门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

    Double slit-valve doors for plasma processing
    6.
    发明授权
    Double slit-valve doors for plasma processing 有权

    公开(公告)号：US07147719B2

    公开(公告)日：2006-12-12

    申请号：US10602491

    申请日：2003-06-23

    申请人： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

    发明人： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

    摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

    Double slit-valve doors for plasma processing
    7.
    发明授权
    Double slit-valve doors for plasma processing 失效
    用于等离子体处理的双缝阀门

    公开(公告)号：US06192827B1

    公开(公告)日：2001-02-27

    申请号：US09111251

    申请日：1998-07-03

    申请人： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

    发明人： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

    IPC分类号： C23C1601

    CPC分类号： H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

    摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

    摘要翻译： 在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。 内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性 通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。 内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道 门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

    Configurable single substrate wet-dry integrated cluster cleaner
    8.
    发明授权
    Configurable single substrate wet-dry integrated cluster cleaner 失效
    可配置单衬底湿干一体化清洁剂

    公开(公告)号：US06899111B2

    公开(公告)日：2005-05-31

    申请号：US09999751

    申请日：2001-10-31

    申请人： Paul E. Luscher ,  James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

    发明人： Paul E. Luscher ,  James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

    IPC分类号： B08B3/04 ,  H01L21/00 ,  B08B3/00

    CPC分类号： H01L21/67051 ,  B08B3/04 ,  H01L21/67028 ,  Y10S134/902 ,  Y10S438/905

    摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.

    摘要翻译： 本发明提供一种清洗基板的方法和装置。 清洁室限定适于在其中容纳衬底的处理腔。 在一个实施例中，清洁室包括具有限定在其中的处理空腔的室主体。 衬底被布置在处理空腔中，而不通过伯努利效应和/或衬底上方和/或下方的流体垫接触其它腔室部件。 流体相对于基底的径向线以一定角度流入处理空腔，以在清洁和干燥过程中引导和/或控制基底的旋转。