公开(公告)号：US20230193071A1

公开(公告)日：2023-06-22

申请号：US18079883

申请日：2022-12-13

Applicant: KCTECH CO., LTD.

Inventor： Jin Seok YEOM ,  Seok Jo KIM

IPC: C09D143/04 ,  C09D7/61 ,  C09D7/20

CPC classification number: C09D143/04 ,  C09D7/61 ,  C09D7/20

Abstract: A surface treatment agent for an organic-inorganic hybrid composition is provided. The surface treatment agent includes a compound represented by one of the following Chemical Formulae 1 to 3.




In Chemical Formulae 1 to 3, R1 to R3 each include at least one of hydrogen (H), a saturated or unsaturated linear or branched C1 to C20 alkyl group, a silane group, a hydroxyl group, and an alkoxysilane group, and R4 includes H or a hydroxyl group.

公开(公告)号：US11597055B2

公开(公告)日：2023-03-07

申请号：US16400554

申请日：2019-05-01

Applicant: KCTECH CO., LTD.

Inventor： Jun Ho Son ,  Sung Ho Shin

IPC: B24B37/04 ,  B24B37/30 ,  B24B37/32 ,  B24B37/005

Abstract: Provided are a membrane and carrier head using the membrane for polishing apparatus. The membrane comprises a first fixing flap extending inwards from the upper part of a side portion, a second fixing flap extending upwards from the upper part of the side portion, wherein the second fixing flap has a first inclined part, a second inclined part and a third extending part of extending upwards whereby a compensation force generated by the inclined parts realize the constant pressing force to the edge of a substrate during a polishing process.

公开(公告)号：US20230065885A1

公开(公告)日：2023-03-02

申请号：US17671259

申请日：2022-02-14

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung CHAE ,  Seung Eun LEE ,  Geun Sik YUN

IPC: B25J9/04 ,  B25J11/00 ,  B65G61/00

Abstract: A substrate cleaning line and a substrate cleaning system including the same are disclosed. The substrate cleaning line may include a chamber portion including a plurality of cleaning chambers to clean a substrate, and a first return robot to load, unload, or transfer the substrate from or to the plurality of cleaning chambers, wherein the cleaning chambers may be stacked on each other in a vertical direction.

公开(公告)号：US20230061965A1

公开(公告)日：2023-03-02

申请号：US17671053

申请日：2022-02-14

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung Chae ,  Seung Eun Lee ,  Geun Sik Yun

IPC: H01L21/677 ,  B08B13/00 ,  B25J15/00 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

公开(公告)号：US20230025469A1

公开(公告)日：2023-01-26

申请号：US17863489

申请日：2022-07-13

Applicant: KCTECH CO., LTD.

Inventor： Jeong Gyu LEE ,  Hyo Jun Jang ,  Jun Ha Hwang

IPC: H01L21/321 ,  C01F17/235

Abstract: Provided is a new cerium-based particle and a polishing slurry composition including the same. The new cerium-based particle may include a self-assembly of fine particles and an organic material.

公开(公告)号：US11384255B2

公开(公告)日：2022-07-12

申请号：US16954350

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Hae Won Yang ,  Jun Ha Hwang ,  Jung Yoon Kim ,  Kwang Soo Park

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20220195243A1

公开(公告)日：2022-06-23

申请号：US17552932

申请日：2021-12-16

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  Yun Su KIM

IPC: C09G1/02

Abstract: A polishing slurry composition is provided. The polishing slurry composition includes polishing particles, a first polishing inhibitor containing a hydrophobic amino acid, and a second polishing inhibitor containing a cyclic polymer, and the first polishing inhibitor and the second polishing inhibitor are different.

公开(公告)号：US11279851B2

公开(公告)日：2022-03-22

申请号：US16426906

申请日：2019-05-30

Applicant: KCTECH CO., LTD.

Inventor： Hyungoo Kong ,  Jinsook Hwang ,  Sangmi Lee ,  Inseol Hwang ,  Nara Shin

IPC: C09G1/02 ,  H01L21/321

Abstract: Provided is a polishing slurry composition including colloidal silica abrasive particles, a metal oxide monomolecular complexing agent, an oxidizer, and a pH adjusting agent, a water-soluble polymer, or both.

公开(公告)号：US20220064488A1

公开(公告)日：2022-03-03

申请号：US17415704

申请日：2019-11-04

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Jung Yoon KIM ,  Hae Won YANG ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

公开(公告)号：US20210163785A1

公开(公告)日：2021-06-03

申请号：US16954338

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02 ,  H01L21/762 ,  H01L21/3105 ,  C08L77/00 ,  C08G73/02

Abstract: The present invention relates to a polishing slurry composition for an STI process and, more particularly, to a polishing slurry composition for an STI process, the composition comprising: a polishing solution including polishing particles; and an additive solution containing a polysilicon film polishing barrier inclusive of a polymer having an amide bond.