摘要:
A high performance demodulator able to realize a further wide band property, low distortion characteristics, and low power consumption in comparison with a conventional multi-port demodulator and having a small fluctuation in characteristics with respect to temperature fluctuations and aging and comprising a five-port junction circuit 101 receiving a received signal Sr and a local signal Slo generated at a local signal generation circuit 102, generating three signals having a phase difference, detecting signal levels (amplitude components) of these signals to obtain three power detection signals (baseband signals) P1, P2, and P3; a first multiplier 103 for multiplying the power detection signal P1 output from a first power detector of the five-port junction circuit 101 by a coefficient A1 (=(κ21/κ11)2) for canceling square components of an interference signal and a local signal; a second multiplier 104 for multiplying the power detection signal P1 output from the first power detector by a coefficient A2 (=(κ31/κ11)2) for canceling square components of an interference signal and a local signal; a first subtractor 105 for subtracting a multiplication result of the first multiplier 103 from the power detection signal P2 output from a second power detector of the five-port junction circuit 101; a second subtractor 106 for subtracting the multiplication result of the second multiplier 104 from the power detection signal P3 output from a third power detector of the five-port junction circuit 101; and a multi-port signal-to-IQ signal conversion circuit 109 for converting the result to an In-phase signal I and a quadrature signal Q as demodulated signals based on the output signals of the first subtractor 105 and the second subtractor 106.
摘要:
In a high-frequency amplifier circuit, a power detector detects input power, an A/D converter converts the detection output into a digital signal, and then a digital LPF averages the digital signal to obtain data of the average value of input power level. Control data corresponding to the data of the average value is supplied as a control voltage from a DC-to-DC converter controlling memory to a DC-to-DC converter via a D/A means. Thus, a low output voltage vdd is supplied from the DC-to-DC converter to a power amplifier as circuit supply voltage of the power amplifier at the times of medium and low output power to control unnecessary current consumption by the power amplifier and thereby increase efficiency of the power amplifier at the times of medium and low output power.
摘要:
A high performance power detector not only suited for monolithic structures, small in size, low in cost, and suitabed for broadband high frequency operations, but also excellent in the linearity of the detection characteristic, having a small fluctuation of detection characteristic relative to the bias fluctuation, having a small fluctuation of detection characteristic relative to the FET threshold voltage fluctuation, and in addition having a small DC offset wherein an additional circuit is unnecessary even if the latter stage circuit has a balance input, and a demodulator using the same.
摘要:
A RF receiver for modulated RF signals based on a N-port junction (1) providing LO/RF isolation is proposed. N thereby is an integer larger than two, such that the N-port junction (1) can be preferably a three port, four port, five port and six port junction. The N-port junction (1) supplied with a first RF signal at a first input (2) and with a second RF signal originating from a local oscillator (2) at a second input (3). An isolation block (13) comprising an active circuitry (22) is comprised in the N-port junction for isolating the second input (3) from the first input (1). Thereby can be ensured that the LO signals are significantly attenuated at the RF port (2).
摘要:
The present invention relates to a simple method for preparing a quinolinone derivative, which is effective as a medicine, e.g., as an agent for treating allergic diseases and the like; novel amide derivatives effective as an intermediate in the method, novel quinolinone derivatives obtained according to the method; and an anti-allergic agent containing a quinolinone derivative and/or physiological salt of the same as the active ingredients. The quinolinone derivative is expressed by the following general formula (II); and the method is characterized in that an amide derivative, expressed by the following general formula (I), is reacted with a basic agent, followed by intramolecular ring formation: General Formula (I) [wherein, R1 represents a hydrogen atom, an alkyl group, an alkyl group containing a hydroxyl group, an alkenyl group, or an aryl group; R2 represents an alkyl group, an alkenyl group, an aryl group, or an aralkyl group; R3 represents a reactive carboxyl group; and R4 to R7 represent, respectively and independently, a hydrogen atom, a hydroxyl group, an alkyl group, an alkoxy group, an alkenyl group, an alkenyloxy group, an aryl group, an aryloxy group, an aralkyloxy group, a R8R9N group (wherein, R8 and R9 represent, respectively and independently, a hydrogen atom, an alkyl group, an alkenyl group, an aralkyl group, or an acyl group), a nitro group, or a R10OOC group (wherein, R10 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, or an aralkyl group)]. General Formula (II) [wherein, R1, R2 and R4 to R7 represent, respectively, the same constituents as described in general formula (I)].
摘要:
The present invention offers 7-aminoquinolinone derivatives, physiologically acceptable salts thereof, anti-allergic agents having as an active ingredient a 7-aminoquinolinone derivative or physiologically acceptable salt thereof, and 7-nitroquinolinone derivatives, wherein the 7-aminoquinolinone derivative is expressed by the following general formula (I): ##STR1## wherein R.sub.1 is a hydrogen atom or an alkyl group;R.sub.2 and R.sub.3 are mutually different groups, each of which is selected from among hydrogen atoms, acyl groups, alkyl groups or alkenyl groups; andR.sub.4 and R.sub.5 are mutually different or identical groups, each of which is selected from among hydrogen atoms, acyl groups, alkyl groups, alkenyl groups or aralkyl groups; and physiologically acceptable salts thereof.
摘要:
A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.
摘要:
There are provided novel compounds of the formulae I and II: ##STR1## and their physiologically acceptable salts. The compounds according to the present invention and their physiologically acceptable salts exhibit an antiallergic activity and are useful for treating allergic diseases.
摘要:
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
摘要:
An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.