公开(公告)号：US20120134014A1

公开(公告)日：2012-05-31

申请号：US13281463

申请日：2011-10-26

Applicant: Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

Inventor： Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

IPC: H01S5/20

CPC classification number: H01S5/141 ,  H01S3/07 ,  H01S3/08027 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/4062 ,  H01S2301/16

Abstract: Disclosed is a light generating device which comprises a first reflective semiconductor optical amplifier emitting a first light along a first direction, a second reflective semiconductor optical amplifier emitting the second light in a direction opposite to the first direction, an optical distributer reflecting a part of an incident light and to pass the remaining of the incident light, and an optical comb filter passing a wavelength component of a specific period.

Abstract translation: 公开了一种发光装置，其包括沿着第一方向发射第一光的第一反射半导体光学放大器，沿与第一方向相反的方向发射第二光的第二反射半导体光学放大器，反射部分的光分配器 入射光并使剩余的入射光通过，并且通过具有特定周期的波长分量的光梳状滤波器。

公开(公告)号：US08183633B2

公开(公告)日：2012-05-22

申请号：US12847974

申请日：2010-07-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L27/12

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US08165437B2

公开(公告)日：2012-04-24

申请号：US12684677

申请日：2010-01-08

Applicant: Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

Inventor： Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC: G02B6/34 ,  G02B6/42

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US08149503B2

公开(公告)日：2012-04-03

申请号：US12367431

申请日：2009-02-06

Applicant: Hyun Soo Kim ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Hyun Soo Kim ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

IPC: H01S3/131 ,  H04J14/02 ,  H04B10/17

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/509

Abstract: Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.

Abstract translation: 提供了一种半导体光放大器和使用其的光信号处理方法。 反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。 向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

公开(公告)号：US08044290B2

公开(公告)日：2011-10-25

申请号：US12250649

申请日：2008-10-14

Applicant: O-kyun Kwon ,  Young-Il Park

Inventor： O-kyun Kwon ,  Young-Il Park

IPC: G10H1/00

CPC classification number: G11B27/28 ,  G10H1/0008 ,  G10H2210/061 ,  G10H2240/131 ,  G11B20/10527 ,  G11B27/105 ,  G11B2020/10546 ,  G11B2020/10555 ,  G11B2020/10564

Abstract: A method and apparatus for reproducing a first part of music data having a plurality of repeated parts includes a method and an apparatus allowing a user to listen to more songs including the repeated parts by searching for a boundary between the first and second parts of the music data having the repeated parts via simple frequency analysis, marking information indicating the found boundary, and reproducing the music data until a part indicated by the marked information is reached. Accordingly, music reproduction satisfaction increases since an inconvenience of manipulating the apparatus for each song is lessened and more songs having different patterns are played.

Abstract translation: 用于再现具有多个重复部分的音乐数据的第一部分的方法和装置包括允许用户通过搜索音乐的第一和第二部分之间的边界来聆听包括重复部分的更多歌曲的方法和装置 通过简单的频率分析具有重复部分的数据，指示找到的边界的标记信息，以及再现音乐数据，直到达到由标记信息指示的部分。 因此，音乐再现满意度增加，因为操纵用于每首歌曲的装置的麻烦减轻，并且播放具有不同图案的更多歌曲。

公开(公告)号：US20110087871A1

公开(公告)日：2011-04-14

申请号：US12783263

申请日：2010-05-19

Applicant: O-kyun KWON ,  Se-an KWON ,  Seong-min KANG ,  Jae-seuk OH

Inventor： O-kyun KWON ,  Se-an KWON ,  Seong-min KANG ,  Jae-seuk OH

IPC: G06F9/24 ,  G06F1/32

CPC classification number: G06F1/3203 ,  G06F9/4418

Abstract: A method and apparatus for controlling a consumer electronics (CE) device, are provided. The method includes determining, when a touch is sensed, whether the touch corresponds to a booting request, and performing a booting operation when the touch is a booting request; and controlling the CE device to operate in a sleep mode when an operation start signal is not received until the booting operation is completed, and controlling the CE device to operate in a normal mode when an operation start signal is received before the booting operation is completed. The apparatus includes a touch sensing unit; which senses a touch to the CE device; a determining unit which determines whether the touch sensed by the touch sensing unit corresponds to a booting request; a booting unit, and a control unit controlling the CE device.

Abstract translation: 提供了一种用于控制消费电子（CE）设备的方法和装置。 该方法包括确定何时检测到触摸，触摸是否对应于引导请求，以及当触摸是引导请求时执行引导操作; 并且当开机操作完成之前，当没有接收到操作开始信号时，控制CE设备进入休眠模式，并且在引导操作完成之前接收到操作开始信号时，控制CE设备以正常模式工作 。 该装置包括触摸感测单元; 其感测到对CE设备的触摸; 确定单元，其确定由所述触摸感测单元感测的触摸是否对应于引导请求; 引导单元和控制CE设备的控制单元。

公开(公告)号：US07804875B2

公开(公告)日：2010-09-28

申请号：US11635938

申请日：2006-12-08

Applicant: Mi Ran Park ,  O Kyun Kwon

Inventor： Mi Ran Park ,  O Kyun Kwon

IPC: H01S5/026 ,  H01S5/183

CPC classification number: H01S5/02296 ,  H01S5/0264 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3095

Abstract: Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate. The predetermined distance is set so that light emitted by the VCSEL can be detected by the MPD.

Abstract translation: 提供了垂直腔表面发射激光器（VCSEL）模块，其提供VCSEL和监视光电二极管（MPD）之间的精确对准，用于有效地检测由VCSEL发射的光以及制造VCSEL模块的方法。 VCSEL模块包括：第一半导体层，第一半导体导电层，有源层，隧道结层和顺序地形成在具有第一和第二区域的衬底的第一区域上的第二半导体导电层; 设置在所述第一区域中的所述第二半导体导电层的一部分上的MPD; 以及VCSEL，其包括在第一区域中具有与第一镜像层，第一半导体层，有源层，隧道结层和第二半导体导电层相同形状的层，以及形成在第一区域的一部分上的第二镜层 第二半导体导电层，并顺序地形成在基板的第二区域上。 设定预定距离，使得能够通过MPD检测由VCSEL发出的光。

公开(公告)号：US07790567B2

公开(公告)日：2010-09-07

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US20100159674A1

公开(公告)日：2010-06-24

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/20

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺，以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US07680162B2

公开(公告)日：2010-03-16

申请号：US11951133

申请日：2007-12-05

Applicant: Mi-Ran Park ,  O-Kyun Kwon

Inventor： Mi-Ran Park ,  O-Kyun Kwon

IPC: H01S3/04

CPC classification number: H01S5/18308 ,  B82Y20/00 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/3095 ,  H01S5/34306 ,  H01S2301/18

Abstract: Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate, wherein a heat release layer is formed on side surfaces of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and the heat release layer has greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer.

Abstract translation: 提供了一种垂直腔表面发射装置。 表面发射器件包括顺序地堆叠在化合物半导体衬底上的具有长波长的光的下反射镜层，提供光学增益的有源层，用于限制电流的隧道结层和上镜面层，其中 通过使用蚀刻工艺在活性层，隧道结层和上镜面层中的至少一个的侧表面上形成放热层，并且散热层的热导率比活性层， 隧道结层和上镜面层。