公开(公告)号：US20100159674A1

公开(公告)日：2010-06-24

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/20

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺，以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US07927988B2

公开(公告)日：2011-04-19

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/425

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US20100144075A1

公开(公告)日：2010-06-10

申请号：US12491443

申请日：2009-06-25

Applicant: In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L33/00

CPC classification number: G02B6/136 ,  G02B6/132

Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

Abstract translation: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。

公开(公告)号：US08017420B2

公开(公告)日：2011-09-13

申请号：US12491443

申请日：2009-06-25

Applicant: In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/00

CPC classification number: G02B6/136 ,  G02B6/132

Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

Abstract translation: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。

公开(公告)号：US20100301448A1

公开(公告)日：2010-12-02

申请号：US12847974

申请日：2010-07-30

Applicant: O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

IPC: H01L27/12

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US08183633B2

公开(公告)日：2012-05-22

申请号：US12847974

申请日：2010-07-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L27/12

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US07790567B2

公开(公告)日：2010-09-07

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US20090153864A1

公开(公告)日：2009-06-18

申请号：US12111864

申请日：2008-04-29

Applicant: In-Gyoo KIM ,  Gyung-Ock Kim

Inventor： In-Gyoo KIM ,  Gyung-Ock Kim

IPC: G01N21/00

CPC classification number: G01N21/3504

Abstract: Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.

Abstract translation: 提供了一种使用该装置的气体感测装置和气体感测方法。 气体感测装置包括检测室，光源，光传感器，气体源和控制器。 光源设置在检测室的一端，光检测器设置在检测室的另一端。 气体源向检测室提供气体。 控制器控制光源和光传感器。 光源包括提供激光的激光和在检测室中反射和扫描激光的光扫描器。 控制器包括电连接到光传感器的相敏检测器。

公开(公告)号：US07738104B2

公开(公告)日：2010-06-15

申请号：US12111864

申请日：2008-04-29

Applicant: In-Gyoo Kim ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  Gyung-Ock Kim

IPC: G01N21/00 ,  G01J5/02

CPC classification number: G01N21/3504

Abstract: Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.

Abstract translation: 提供了一种使用该装置的气体感测装置和气体感测方法。 气体感测装置包括检测室，光源，光传感器，气体源和控制器。 光源设置在检测室的一端，光检测器设置在检测室的另一端。 气体源向检测室提供气体。 控制器控制光源和光传感器。 光源包括提供激光的激光和在检测室中反射和扫描激光的光扫描器。 控制器包括电连接到光传感器的相敏检测器。

公开(公告)号：US07693384B2

公开(公告)日：2010-04-06

申请号：US12111884

申请日：2008-04-29

Applicant: Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

Inventor： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC: G02B6/10

CPC classification number: G02B6/12007

Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

Abstract translation: 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。