公开(公告)号：US12072372B2

公开(公告)日：2024-08-27

申请号：US17903344

申请日：2022-09-06

Applicant: STMicroelectronics S.r.l.

Inventor： Matteo Brivio ,  Nicola De Campo ,  Matteo Venturelli

IPC: G01R31/28

CPC classification number: G01R31/2834

Abstract: A system, method, and device to test an electronic circuit are disclosed having a stage to supply a driving signal to a load comprising a pull-up switch and a pull-down switch and a pre-driver stage including pre-driver circuits. The electronic circuit including circuits for testing the pre-driver stage under the control of an automatic testing equipment (ATE) to operate a built-in self-test sequence including test commands for the pre-driver stage under the control of an external test signal issued by the ATE. The system includes a time measuring circuit to measure duration of signals at the output of the stage coupled to a pass-fail check circuit, and to evaluate if the duration of signals at the output of the stage to determine whether the output satisfies a pass criterion.

公开(公告)号：US20240271935A1

公开(公告)日：2024-08-15

申请号：US18160723

申请日：2023-01-27

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Alessandro MAGNANI ,  Matteo QUARTIROLI ,  Alessandra Maria RIZZO PIAZZA RONCORONI ,  Paolo ROSINGANA

IPC: G01C19/5776

CPC classification number: G01C19/5776 ,  G06F7/544 ,  H04R1/10 ,  H04R2460/13

Abstract: A device includes one or more inertial sensors and fusion circuitry coupled to the one or more inertial sensors. The inertial sensors, in operation, generate inertial sensor data with respect to a plurality of axes of movement. The fusion circuitry, in a polar fusion mode of operation, applies a plurality of polar rotation operations to the generated inertial sensor data to rotate the generated inertial sensor data onto an axis of the plurality of axes of movement. A fused data signal is generated based on a result of the plurality of polar rotation operations. The plurality of inertial sensors may include bone-conduction sensors.

公开(公告)号：US20240266459A1

公开(公告)日：2024-08-08

申请号：US18608301

申请日：2024-03-18

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Valeria CINNERA MARTINO

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/1075 ,  H01L27/1443 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US20240266259A1

公开(公告)日：2024-08-08

申请号：US18637906

申请日：2024-04-17

Applicant: STMicroelectronics S.r.l.

Inventor： Mauro MAZZOLA ,  Matteo DE SANTA

IPC: H01L23/495 ,  H01L21/50 ,  H01L23/00

CPC classification number: H01L23/4951 ,  H01L21/50 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/74

Abstract: In providing electrical wire-like connections between at least one semiconductor die arranged on a semiconductor die mounting area of a substrate and an array of electrically-conductive leads in the substrate, pressure force is applied to the electrically-conductive leads in the substrate during bonding the wire-like connections to the electrically-conductive leads. Such a pressure force is applied to the electrically-conductive leads in the substrate via a pair of mutually co-operating force transmitting surfaces. These surfaces include a first convex surface engaging a second concave surface.

公开(公告)号：US12057474B2

公开(公告)日：2024-08-06

申请号：US17325932

申请日：2021-05-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonino Schillaci ,  Paola Maria Ponzio ,  Roberto Cammarata

IPC: H03F3/195 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H03F3/217

CPC classification number: H01L29/0634 ,  H01L29/66712 ,  H01L29/7811 ,  H03F3/2176 ,  H03F2200/451

Abstract: A semiconductor MOS device having an epitaxial layer with a first conductivity type formed by a drain region and by a drift region. The drift region accommodates a plurality of first columns with a second conductivity type and a plurality of second columns with the first conductivity type, the first and second columns alternating with each other and extending on the drain region. Insulated gate regions are each arranged on top of a respective second column; body regions having the second conductivity type extend above and at a distance from a respective first column, thus improving the output capacitance Cds of the device, for use in high efficiency RF applications.

公开(公告)号：US12057180B2

公开(公告)日：2024-08-06

申请号：US17934102

申请日：2022-09-21

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Rousset) SAS

Inventor： Francesco La Rosa ,  Antonino Conte ,  Francois Maugain

IPC: G11C16/00 ,  G11C16/14 ,  G11C16/26 ,  G11C16/34 ,  H10B41/30 ,  H10B41/40

CPC classification number: G11C16/3445 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3459 ,  G11C16/349 ,  H10B41/30 ,  H10B41/40

Abstract: In an embodiment a non-volatile memory device includes a memory array having a plurality of memory cells, a control unit operatively coupled to the memory array, a biasing stage controllable by the control unit and configured to apply a biasing configuration to the memory cells to perform a memory operation and a reading stage coupled to the memory array and controllable by the control unit, the reading stage configured to verify whether the memory operation has been successful based on a verify level, wherein the control unit is configured to adaptively modify a value of the verify level based on an ageing of the memory cells.

公开(公告)号：US12051731B2

公开(公告)日：2024-07-30

申请号：US17698986

申请日：2022-03-18

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Patrick Fiorenza ,  Fabrizio Roccaforte ,  Mario Giuseppe Saggio

IPC: H01L29/16 ,  H01L27/06 ,  H01L29/423 ,  H01L29/872

CPC classification number: H01L29/4234 ,  H01L27/0629 ,  H01L29/1608 ,  H01L29/872

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.

公开(公告)号：US20240249955A1

公开(公告)日：2024-07-25

申请号：US18624589

申请日：2024-04-02

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo CREMA

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L21/4842 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49575

Abstract: An multi-die semiconductor device disclosed herein includes a metallic leadframe with a central die pad encircled by electrically-conductive leads. Mounted on the die pad are two semiconductor dice, each with dedicated bonding pads on the surfaces facing away from the die pad. A layer of laser-activatable material is precisely molded over the dice and the leadframe. This layer forms a network of laser-activated lines: the first subset establishes electrical connections between the dice bonding pads and the leadframe leads, while the second subset interconnects the bonding pads of the first die to those of the second. There are two distinct metallic layers; the lower one, directly on the laser-activated lines, is formed of electroless-plated material, and the upper one, enhancing the structure, is formed of electroplated material, thus providing robust and reliable interconnections within the device.

公开(公告)号：US20240231510A9

公开(公告)日：2024-07-11

申请号：US18048360

申请日：2022-10-20

Applicant: STMicroelectronics S.r.l.

Inventor： Stefano Paolo Rivolta ,  Federico Rizzardini

IPC: G06F3/0346 ,  G06F3/0354

CPC classification number: G06F3/0346 ,  G06F3/03547

Abstract: A method includes receiving electrostatic sensor data in a processor of an electronic device from an electrostatic sensor mounted behind a touchscreen of the electronic device and using the electrostatic sensor data to determine when the touchscreen is being used. Based on whether or not the touchscreen is being used, an on-table detection (OTD) algorithm is selected from a plurality of available OTD algorithms. In one or more examples, the OTD algorithm may also be selected based on the current device mode of the electronic device, which may be determined from a lid angle, a screen angle, and a keyboard angle of the electronic device. The selected OTD algorithm is run to determine whether or not the electronic device is located on a stationary or stable surface.

公开(公告)号：US20240230596A9

公开(公告)日：2024-07-11

申请号：US18489737

申请日：2023-10-18

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Domenico GIUSTI ,  Marco DEL SARTO ,  Fabio QUAGLIA ,  Enri DUQI

IPC: G01N29/04 ,  G01N29/24

CPC classification number: G01N29/04 ,  G01N29/2406 ,  G01N29/2437 ,  G01N2291/0231 ,  G01N2291/0289 ,  G01N2291/106

Abstract: An integrated electronic system is provided with a package formed by a support base and a coating region arranged on the support base and having at least a first system die, including semiconductor material, coupled to the support base and arranged in the coating region. The integrated electronic system also has, within the package, a monitoring system configured to determine the onset of defects within the coating region, through the emission of acoustic detection waves and the acquisition of corresponding received acoustic waves, whose characteristics are affected by, and therefore are indicative of, the aforementioned defects.