Abstract:
A method for detecting a null current condition in a PWM driven inductor connected between a voltage source node and a second circuit node of a line for outputting current to a load includes generating a derivative signal by time differentiating a voltage on the second node. The method further includes monitoring an instant when the derivative signal becomes negative, and signaling verification of the null current condition each time the derivative signal becomes negative.
Abstract:
A method of estimating a global motion vector representative of the motion of a first digital image with respect to a second digital image, the first and the second image forming part of a sequence of images and being made up of, respectively, a first and a second pixel matrix. The method estimates the global motion vector on the basis of the estimate of at least one motion vector of at least one region of the first image representative of the motion of the at least one region from the first image to the second image and comprising phases of: subdividing the at least one region of the first image into a plurality of pixel blocks, assigning to each block of the plurality a respective weighting coefficient calculated on the basis of a respective inhomogeneity measure, and estimating the at least one motion vector of said at least one region on the basis of the weighting coefficients assigned to each block of the at least one region.
Abstract:
An assembly structure for an electronic integrated power circuit, which circuit is fabricated on a semiconductor die having a plurality of contact pads associated with said integrated circuit and connected electrically to respective leads of said structure, wherein a shield element is coupled thermally to said die by a layer of an adhesive material.
Abstract:
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
Abstract:
A method of self-calibrating a modulator includes at least one integrator likely to incur a phase error may include reading a pulse response of the modulator, calculating a phase error parameter of the at least one integrator, and calibrating the phase error parameter. In addition, the calibration may provide a count of pulse response samples above suitable threshold values, as well as a change in the value of a capacitor associated with the integrator based upon the sample count.
Abstract:
A power supply circuit structure is useful with a row decoder for reading/writing data from/into memory cells of an integrated electrically programmable/erasable non-volatile memory device incorporating an array of multilevel memory cells. Advantageously, multiple supply voltages to the row decoder and a switching circuit for transferring the voltages over hierarchic-mode enabled conduction paths are provided.
Abstract:
A process for the fabrication of devices that integrate protected microstructures, comprising the following steps: forming, in a body of semiconductor material, at least one microstructure having at least one first portion and one second portion which are relatively mobile with respect to one another and are separated from one another by at least one gap region, which is accessible through a face of the body; and sealing the gap. The sealing step includes depositing on the face of the body a layer of protective material, in such a way as to close the gap region, the protective layer being such as to enable relative motion between the first portion and the second portion of the microstructure.
Abstract:
A method and a circuit are for regulating the source terminal voltage of a non-volatile memory cell during the cell programming and/or reading phases. The method includes a phase of locally regulating the voltage value and includes comparing the source current of the cell array with a reference current. A fraction of the source current is converted to a voltage and compared with a voltage generated from a memory cell acting as a reference and being programmed to the distribution with the highest current levels. The comparison may be used for controlling a current generator to inject, into the source terminal, the current necessary to keep the predetermined voltage thereof at a constant value.
Abstract:
A binary encoding circuit is for converting at least first and second binary input signals into an output code that includes at least first and second binary output signals. The circuit may include at least one first selection circuit and at least one second selection circuit that are interconnected and comprise transistors that can be activated/deactivated, i.e. made to conduct/not conduct, according to the binary input signals. The circuit makes it possible to generate a binary code that represents the binary number of the binary input signals that are simultaneously asserted. The encoding circuit can act as a static counter, for example.
Abstract:
An image-detecting device including: a body housing a sensor; a first supporting element, rigidly coupled with the body and defining a seat; and an objective including at least one optical unit having an optical axis. The seat forms a guide portion engaging directly and slidably an alignment portion formed by said optical unit to keep the optical axis orthogonal to the sensor.