摘要:
Two embodiments of a wordline boost clock circuit that can be used in high speed DRAM circuits are disclosed. The clock circuits require only one boost capacitor and discharge the wordlines faster, improving the DRAM access time. The basic feature of the clock circuit is in the floating gate structure of the nmos device which drives the load to negative during the boosting. In the first embodiment of the clock, the gate of a first device is connected to a first node through a second device. A second node, connected to a wordline, is discharged through the first and a third device when a third node is high with a fourth node low. After a sufficient discharge of the second node, the fourth node is pulled to VDD turning the second device on and a fourth device off. The first (NMOS) transistor has its gate and drain connected together and forms a diode. When a boost capacitor pulls the first node down to negative, the first device stays completely off because of its diode configuration and the second node is pulled to negative through the third device. In the second embodiment, a first device is connected between a boost capacitor and a second node. The load is discharged through a third device with a fourth device on but a first and second device off. After a sufficient discharge of the load, a fourth device is turned off but a second device is turned on, making the third device a diode. When a fifth node is pulled to ground, the second node is pulled down to negative with the first device on. In the second embodiment circuit, the load discharges through only one nmos device and consequently discharges faster than the circuit of the first embodiment.
摘要:
A mechanism is provided for reducing power consumed by a multi-core processor. Responsive to a number of properly functioning processor cores being more than a required number of processor cores in a multi-core processor, the power consumption measurement module determines a number of the properly functioning processor cores to disable. The power consumption measurement module initiates an equal amount of workload to be processed by each of the properly functioning processor cores. The power consumption measurement module determines power consumed by each of the properly functioning processor cores. The power consumption measurement module deactivates one or more of the properly functioning processor cores that have maximum power in order that the number of properly functioning processor cores deactivated is equal to the number of properly functioning processor cores to disable.
摘要:
Mechanisms for generating a worst case current waveform for testing of integrated circuit devices are provided. Architectural analysis of an integrated circuit device is first performed to determine an initial worst case power workload to be applied to the integrated circuit device. Thereafter, the derived worst case power workload is applied to a model and is simulated to generate a worst case current waveform that is input to an electrical model of the integrated circuit device to generate a worst case noise budget value. The worst case noise budget value is then compared to measured noise from application of the worst case power workload to a hardware implemented integrated circuit device. The worst case current waveform may be selected for future testing of integrated circuit devices or modifications to the simulation models may be performed and the process repeated based on the results of the comparison.
摘要:
A sense amplifier based flip-flop having built-in logic functions. The flip-flop includes a first and second input circuits configured to cause complementary first and second logic values to be provided on first and second logic nodes, respectively. The flip-flop further includes a sense circuit configured to sense and capture the first and second logic values on first and second capture nodes, respectively, during an evaluation phase, and a precharge circuit configured to precharge the first and second logic node and the first and second capture nodes during a precharge phase. The flip-flop also includes a noise immunity circuit, configured to, during the evaluation phase, become active subsequent to the sense circuit capturing the first and second logic values, wherein, when activated, the noise immunity circuit prevents floating voltages on the first and second logic nodes.
摘要:
A system and method for sorting processor chips based on a thermal design point are provided. With the system and method, for each processor chip, a high power workload is run on the processor chip to determine a voltage regulator module (VRM) load line. Thereafter, a thermal design point (TDP) workload is applied to the processor chip and the voltage is varied until a performance of the processor chip falls on the VRM load line. At this point, the power input to the processor chip is measured and used to sort, or bin, the processor chip. The various workloads applied have a constant frequency. From this sorting of processor chips, high speed processors that require less voltage to achieve a desired frequency and low current processors that drain less current while running at a desired frequency may be identified.
摘要:
A system and method for generating random noise for use in testing electronic devices comprises a first random pattern generator circuit for generating first sets of random bit pattern signals; one or more delay devices each receiving a trigger input signal and a random bit pattern signal set for generating in response a respective delay output signal, each delay output signal being delayed in time with respect to a respective trigger signal, a delay time being determined by the bit pattern set received; and, an oscillator circuit device associated with a respective one or more delay devices for receiving a respective delay output signal therefrom and generating a respective oscillating signal, each oscillator signal generated being used to generate artificial random noise for emulating a real noise environment in an electronic device. A second random pattern generator circuit may be provided for generating second sets of random bit pattern signals for receipt by each of the associated oscillator circuit devices in order to frequency adjust in a random manner, each of the oscillator signals.
摘要:
An apparatus for performing ADD and ROTATE as a single instruction within a processor is disclosed. In accordance with a preferred embodiment of the present invention, the apparatus comprises an adder and a rotator. The adder is utilized for adding a first number to a second number in a multiple stages to yield a carry-out and a sum output. During each of these stages, the adder produces a group generate value and a group propagate value. The rotator is utilized for rotating the group propagate value and the group generate value at each of the stages before the yielding of the carry-out and the sum output. As such, both ADD and ROTATE instructions can be completed within a single processor cycle.
摘要:
Multiple reads are made from an array of single-read port memory cells. An array of single-read port memory cells is provided with "steering" devices located between a column of cells and the output drivers for the array. The steering devices are controlled by the read pointers such that the steering signal for a given output configuration is active only when read pointers for that output configuration are active. To complete the function, the read pointers are fed to OR gates, one per row, so that a given pointer will activate the read port of a plurality of consecutive memory cells. The read pointers represent the decoded read address and only one is active at a time.
摘要:
A device for controlling the voltage across an NMOS pull-up transistor including a source node which may be exposed to a variable voltage. The device further includes a gate node which may be exposed to a variable voltage. A control portion regulates the voltage applied to the gate node, wherein a differential in voltage between the source node and the gate node is limited to a desired level.
摘要:
A pull-down circuit for a TTL compatible data output buffer uses NMOS devices. The pull-down circuit comprising two NMOS stages. Namely, a diode configuration stage where the gate and drain electrodes are shorted together during pull-down and a common-source stage. Both PMOS and NMOS devices are used for shorting the gate and drain electrodes.