公开(公告)号：US06427703B1

公开(公告)日：2002-08-06

申请号：US09510117

申请日：2000-02-22

Applicant: Sasson Somekh

Inventor： Sasson Somekh

IPC: B08B700

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/02 ,  H01J37/3174 ,  H01J2237/022 ,  H01J2237/182 ,  Y10S134/902

Abstract: A cleaning system for use with a micro-column array, electron beam lithography system is described. The cleaning system includes an oxidizer source and an oxidizer distribution mechanism that introduces an oxidizer into the imaging chamber of the lithography system. The oxidizer is pumped into the chamber at a flow rate and pressure that maintains a required sub-atmospheric pressure within the imaging chamber. The oxidizer acts to oxidize carbon contamination that may be present in the imaging chamber or on the surfaces of components within the chamber, such as the imaging mask. A volatile oxidized carbon gas is produced by the oxidization of the carbon contaminants. The oxidized carbon gas is pumped out of the imaging chamber to thereby remove the carbon contamination from the chamber.

Abstract translation: 描述了一种用于微柱阵列，电子束光刻系统的清洁系统。 清洁系统包括氧化剂源和氧化剂分配机构，其将氧化剂引入到光刻系统的成像室中。 将氧化剂以保持成像室内所需的低于大气压的流量和压力泵入腔室。 氧化剂用于氧化可能存在于成像腔室中或室内部件表面上的碳污染物，例如成像掩模。 通过碳污染物的氧化产生挥发性氧化碳气体。 将氧化的碳气从成像室泵出，从而从室中除去碳污染物。

公开(公告)号：US06394109B1

公开(公告)日：2002-05-28

申请号：US09290282

申请日：1999-04-13

Applicant: Sasson Somekh

Inventor： Sasson Somekh

IPC: B08B700

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/02 ,  H01J37/3174 ,  H01J2237/022 ,  H01J2237/182 ,  Y10S134/902

Abstract: A cleaning system for use with a charged particle beam lithography system is described. The cleaning system includes an oxidizer source and an oxidizer distribution mechanism that introduces an oxidizer into the imaging chamber of the lithography system. The oxidizer is pumped into the chamber at a flow rate and pressure that maintains a required sub-atmospheric pressure within the imaging chamber. The oxidizer acts to oxidize carbon contamination that may be present in the imaging chamber or on the surfaces of components within the chamber, such as the imaging mask. A volatile oxidized carbon gas is produced by the oxidization of the carbon contaminants. The oxidized carbon gas is pumped out of the imaging chamber to thereby remove the carbon contamination from the chamber.

Abstract translation: 描述了一种用于带电粒子束光刻系统的清洁系统。 清洁系统包括氧化剂源和氧化剂分配机构，其将氧化剂引入到光刻系统的成像室中。 将氧化剂以保持成像室内所需的低于大气压的流量和压力泵入腔室。 氧化剂用于氧化可能存在于成像腔室中或室内部件表面上的碳污染物，例如成像掩模。 通过碳污染物的氧化产生挥发性氧化碳气体。 将氧化的碳气从成像室泵出，从而从室中除去碳污染物。

公开(公告)号：US5849136A

公开(公告)日：1998-12-15

申请号：US754833

申请日：1996-11-22

Applicant: Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

Inventor： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/00

CPC classification number: H01J37/32082 ,  H01J37/32183

Abstract: A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

Abstract translation: 能够显着地高于13.56MHz的等离子体处理装置可以产生被动电极的自偏置电压降低，以使得不会损害在高速和高密度集成电路中越来越普遍的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

公开(公告)号：US5804507A

公开(公告)日：1998-09-08

申请号：US549001

申请日：1995-10-27

Applicant: Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee ,  Sasson Somekh ,  Robert D. Tolles

Inventor： Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee ,  Sasson Somekh ,  Robert D. Tolles

IPC: B24B37/04 ,  B24B57/02 ,  H01L21/00

CPC classification number: B24B57/02 ,  B24B37/04

Abstract: An apparatus for polishing semiconductor wafers and other workpieces that includes a polishing pads mounted on respective platens at multiple polishing stations. Multiple wafer heads, at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a carousel, which provides circumferential positioning of the heads relative to the polishing pads, and the wafer heads oscillate radially as supported by the carousel to sweep linearly across the respective pads in radial directions with respect to the rotatable carousel. Each polishing station includes a pad conditioner to recondition the polishing pad so that it retains a high polishing rate. Washing stations may be disposed between polishing stations and between the polishing stations and a transfer and washing station to wash the wafer as the carousel moves. A transfer and washing station is disposed similarly to the polishing pads. The carousel simultaneously positions one of the heads over the transfer and washing station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers and washing of wafers and wafer heads can be performed concurrently with wafer polishing. A robot positioned to the side of the polishing apparatus automatically moves cassettes filled with wafers into a holding tub, and transfers individual wafers vertically held in the cassettes between the holding tub and the transfer and washing station. The multiple polishing pads can be used to sequentially polish a wafer held in a wafer head in a step of multiple steps. The steps may be equivalent, may provide polishes of different finish, or may be directed to polishing different levels.

Abstract translation: 一种用于抛光半导体晶片和其它工件的装置，其包括安装在多个抛光站的相应压板上的抛光垫。 与抛光台的数量相比，至少一个数量的多个晶片头可以装载单独的晶片。 晶片头从旋转盘悬挂，其提供头相对于抛光垫的圆周定位，并且晶片头在圆盘传送带支撑下径向摆动，以相对于可旋转圆盘传送器在径向上线性地扫过相应的垫。 每个抛光台包括用于修整抛光垫的垫调节器，使得其保持高抛光速率。 洗涤站可以设置在抛光站之间和抛光站之间，以及传送和洗涤站，以便随着传送带移动而洗涤晶片。 传送和洗涤站的布置类似于抛光垫。 圆盘传送带同时将其中一个头放置在传送和洗涤台上，而其余的头位于用于晶片抛光的抛光站之上，从而可以与晶片抛光同时进行晶片的加载和卸载以及晶片和晶片头的清洗。 位于抛光装置一侧的机器人将自动地将装载有晶片的盒子移动到保持桶中，并且将保持在保持桶和转移和洗涤站之间的盒中的垂直保持的各个晶片传送。 多个抛光垫可以用于在多个步骤的步骤中顺序抛光保持在晶片头中的晶片。 这些步骤可以是等效的，可以提供不同涂饰的抛光剂，或者可以指向抛光不同的水平。

公开(公告)号：US5618382A

公开(公告)日：1997-04-08

申请号：US83750

申请日：1993-06-25

Applicant: Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

Inventor： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46 ,  H05H1/00

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H05H1/46 ,  Y10S148/051

Abstract: A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

Abstract translation: 等离子体处理装置的电容器操作明显高于13.56MHz可以产生被动电极的自偏压降低，以使得不会损坏在高速和高密度集成电路中越来越普遍的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

公开(公告)号：US4951601A

公开(公告)日：1990-08-28

申请号：US371700

申请日：1989-06-23

Applicant: Dan Maydan ,  Sasson Somekh ,  David N. Wang ,  David Cheng ,  Masato Toshima ,  Isaac Harari ,  Peter D. Hoppe

Inventor： Dan Maydan ,  Sasson Somekh ,  David N. Wang ,  David Cheng ,  Masato Toshima ,  Isaac Harari ,  Peter D. Hoppe

IPC: H01L21/00 ,  H01L21/677

CPC classification number: H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67742 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139

Abstract: An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R-.theta. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.

Abstract translation: 公开了一种集成的模块化多室真空处理系统。 该系统包括一个加载锁定，可以包括一个外部盒式电梯和一个内部装载锁定晶片升降机，并且还包括围绕负载锁的周边的站，用于将一个，两个或几个真空处理室连接到负载锁定室。 机器人安装在装载锁中，并且利用同轴驱动系统，该系统通过双四杆连杆机构连接到末端执行器，用于将选定的Rθ运动传递给叶片，以在外部升降机，内部升降机 和各个处理室。 该系统独特地适用于实现各种类型的IC处理，包括蚀刻，沉积，溅射和快速热退火室，从而为使用不同工艺的多步骤顺序处理提供了机会。

公开(公告)号：US4668365A

公开(公告)日：1987-05-26

申请号：US664657

申请日：1984-10-25

Applicant: Robert Foster ,  David N. Wang ,  Sasson Somekh ,  Dan Maydan

Inventor： Robert Foster ,  David N. Wang ,  Sasson Somekh ,  Dan Maydan

IPC: C23C16/50 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/31 ,  C23C14/00

CPC classification number: H01J37/32623 ,  C23C16/045 ,  C23C16/4558 ,  C23C16/509 ,  C23C16/517 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/3327

Abstract: A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.

Abstract translation: 等离子体CVD反应器和相关工艺使用磁场增强来提供高质量，非常高的沉积速率的金属，电介质和保形半导体膜。 该设计和工艺设计用于自动化，高整体，在线小尺寸VLSI集成电路制造，并适用于多步原位处理。

公开(公告)号：US4618262A

公开(公告)日：1986-10-21

申请号：US600189

申请日：1984-04-13

Applicant: Dan Maydan ,  Sasson Somekh ,  Edward M. Kaczorowski

Inventor： Dan Maydan ,  Sasson Somekh ,  Edward M. Kaczorowski

IPC: H01L21/302 ,  G01B11/06 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/66 ,  G01B11/02 ,  G01B9/02

CPC classification number: G01B11/0675

Abstract: A laser interferometer system and associated method for etching endpoint detection, and for monitoring etching or growth to a selected depth. The process implemented by the system involves scanning the laser beam across scribe lines on a wafer which is undergoing fabrication (growth or etching) and monitoring the resulting interference pattern. Alternatively, the process implemented by this system involves moving the laser beam across the scribe line to detect the position of the scribe line; locking the laser beam on the scribe line; and monitoring the resulting interference pattern.

Abstract translation: 激光干涉仪系统和相关方法，用于蚀刻端点检测，以及用于监测蚀刻或生长至选定深度。 该系统实现的过程包括扫描正在进行制造（生长或蚀刻）的晶片上的划线上的激光束并监测所得到的干涉图案。 或者，由该系统实现的过程包括将激光束移动穿过划线以检测划线的位置; 将激光束锁定在划线上; 并监测产生的干扰模式。

公开(公告)号：US4049944A

公开(公告)日：1977-09-20

申请号：US606373

申请日：1975-08-20

Applicant: Hugh L. Garvin ,  Amnon Yariv ,  Sasson Somekh

Inventor： Hugh L. Garvin ,  Amnon Yariv ,  Sasson Somekh

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/265 ,  B23K9/00

CPC classification number: G03F7/203 ,  H01L21/0275 ,  H01L21/2654

Abstract: Disclosed is a process for fabricating small geometry electronic devices, including a variety of integrated optical devices. The process includes the steps of holographically exposing a resist masking layer to a plurality of optical interference patterns in order to develop a masking pattern on the surface of a semiconductive body. Thereafter, regions of the body exposed by openings in the masking pattern are ion beam machined to thereby establish very small dimension undulations in these regions. These closely spaced undulations have a variety of uses in optical devices as will be described. The present invention is not limited to the geometry control of semiconductive structures, and may also be used in the geometry control of metallization patterns which have a variety of applications, or the geometry control of any ion beam sensitive material.

Abstract translation: 公开了一种用于制造小型几何电子器件的方法，包括各种集成的光学器件。 该方法包括以下步骤：将抗蚀剂掩模层全息曝光于多个光学干涉图案，以便在半导体本体的表面上形成掩模图案。 此后，通过掩模图案中的开口暴露的体的区域被加工成离子束，从而在这些区域中形成非常小的尺寸起伏。 这些紧密间隔的起伏在光学装置中具有各种用途，如将要描述的。 本发明不限于半导体结构的几何形状控制，也可用于具有各种应用或任何离子束敏感材料的几何形状控制的金属化图案的几何形状控制。

公开(公告)号：US20100035526A1

公开(公告)日：2010-02-11

申请号：US12581049

申请日：2009-10-16

Applicant: Robert D. Tolles ,  Norman Shendon ,  Sasson Somekh ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee

Inventor： Robert D. Tolles ,  Norman Shendon ,  Sasson Somekh ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee

IPC: B24B1/00 ,  B24B7/04 ,  B24B41/06 ,  B24B53/02

CPC classification number: H01L21/67057 ,  B08B1/007 ,  B24B27/0023 ,  B24B37/30 ,  B24B37/345 ,  B24B41/005 ,  B24B53/017 ,  B24B57/02 ,  H01L21/30625 ,  H01L21/67051

Abstract: A chemical-mechanical polishing apparatus including a table top, a transfer station mounted on the table top, a plurality of polishing stations mounted on the table top, a plurality of washing stations, and a plurality of carrier heads supported by a support member rotatable about an axis. Each washing station is located between a first polishing station and either a second polishing station or the transfer station, and the transfer station and the plurality of polishing stations are arranged at approximately equal angular intervals about the axis.

Abstract translation: 一种化学机械抛光装置，包括台面，安装在桌面上的转印站，安装在桌面上的多个抛光站，多个洗涤站以及由可围绕 一个轴。 每个洗涤站位于第一抛光站和第二抛光站或转移站之间，并且传送站和多个抛光站以围绕轴线的大致相等的角度间隔布置。