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81 条记录 (耗时 0.027 秒)

    Information recording/reproducing device
    51.
    发明授权
    Information recording/reproducing device 有权
    信息记录/再现装置

    公开(公告)号：US08305797B2

    公开(公告)日：2012-11-06

    申请号：US13044384

    申请日：2011-03-09

    申请人： Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    发明人： Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    IPC分类号： G11C11/00

    CPC分类号： H01L45/1233 ,  G11B9/04 ,  G11C13/0011 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/146

    摘要： According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.

    摘要翻译： 根据一个实施例，信息记录/再现装置包括记录层和驱动器部分。 记录层具有包含第一化合物的第一层。 第一化合物包括含有第一金属元素和第二氧化物的第一氧化物的混合晶体。 第二氧化物具有与第一氧化物相同的晶体结构，并且含有与第一金属元素不同的第二金属元素。 驱动器部分被配置为在记录层中产生状态变化，以通过施加电压至记录层和将电流流向记录层中的至少一个来记录信息。 基于晶体结构，第一和第二金属元素离子半径较小的元素的组成比不小于由第一和第二金属元素的离子形成的晶格的渗透阈值。

    Positioning system mounted on probe memory device and positioning method thereof
    56.
    发明授权
    Positioning system mounted on probe memory device and positioning method thereof 失效
    安装在探针存储装置上的定位系统及其定位方法

    公开(公告)号：US07852739B2

    公开(公告)日：2010-12-14

    申请号：US12051101

    申请日：2008-03-19

    申请人： Akihiro Koga ,  Shinji Takakura ,  Hiroaki Nakamura ,  Kohichi Kubo ,  Takahiro Hirai ,  Junichi Akiyama

    发明人： Akihiro Koga ,  Shinji Takakura ,  Hiroaki Nakamura ,  Kohichi Kubo ,  Takahiro Hirai ,  Junichi Akiyama

    IPC分类号： G11B7/00

    CPC分类号： G11B9/1481 ,  B82Y10/00 ,  G11B5/743 ,  G11B9/1454

    摘要： A probe memory device carries out positioning with the use of a servo pattern provided in a servo area on a recording medium, and the recording medium and a probe head section are reciprocatingly moved (scan-moved) by vibration at a specific frequency in a one-axis direction. At this time, based on information from the servo area, relative position information between the recording medium and the probe head section is acquired, the relative position information is processed at a control section, and then, feedback control is carried out for carrying out position correction relative to an actuator.

    摘要翻译： 探针存储装置通过使用设置在记录介质上的伺服区域中的伺服图案来执行定位，并且记录介质和探针头部分通过一个特定频率的振动以一个方式往复移动（扫描移动） 方向。 此时，基于来自伺服区域的信息，获取记录介质和探头头部之间的相对位置信息，在控制部处理相对位置信息，然后进行反馈控制以进行位置 相对于致动器的校正。

    Nonvolatile latch circuit and nonvolatile flip-flop circuit
    59.
    发明授权
    Nonvolatile latch circuit and nonvolatile flip-flop circuit 有权
    非易失性锁存电路和非易失性触发器电路

    公开(公告)号：US07733145B2

    公开(公告)日：2010-06-08

    申请号：US11848864

    申请日：2007-08-31

    申请人： Keiko Abe ,  Takahiro Hirai ,  Shiho Nakamura ,  Hirofumi Morise ,  Mototsugu Hamada

    发明人： Keiko Abe ,  Takahiro Hirai ,  Shiho Nakamura ,  Hirofumi Morise ,  Mototsugu Hamada

    IPC分类号： H03K3/00 ,  H03K3/45

    CPC分类号： G11C11/16 ,  G11C14/0081

    摘要： A nonvolatile latch circuit includes: a first gate part controlling to load or intercept an input signal based on a gate signal; a first logic gate functioning as an inverter or a gate outputting a constant voltage in response to the first control signal; a second logic gate functioning as an inverter or a gate outputting the constant voltage in response to the first control signal; a second gate part controlling to load or intercept the output of the second logic gate based on an inverted signal of the gate signal and sends the output of the second logic gate to an first input terminal of the first logic gate; and first and second injection type MTJ elements provided between the driving power supply and the first and second logic gates and changing in resistance depending upon a current flow direction.

    摘要翻译： 非易失性锁存电路包括：第一栅极部分，其基于栅极信号控制输入信号的加载或截取; 用作反相器的第一逻辑门或响应于第一控制信号输出恒定电压的栅极; 用作反相器的第二逻辑门或响应于第一控制信号输出恒定电压的栅极; 第二栅极部分，用于基于所述栅极信号的反相信号来加载或截取所述第二逻辑门的​​输出，并将所述第二逻辑门的​​输出发送到所述第一逻辑门的第一输入端; 以及设置在驱动电源和第一和第二逻辑门之间的第一和第二注入型MTJ元件，并根据电流流动方向改变电阻。