公开(公告)号：US20230286107A1

公开(公告)日：2023-09-14

申请号：US17691101

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Patrick A. Higashi ,  Hassan G. Iravani ,  Harry Q. Lee ,  Haosheng Wu ,  Eric T. Wu ,  Ningzhuo Cui ,  Jeonghoon Oh ,  Christopher Lai ,  Jun Qian

IPC: B24B49/10 ,  B24B37/26

CPC classification number: B24B49/105 ,  B24B37/26

Abstract: A body is brought into contact with a polishing pad of a polishing system, a polishing liquid is supplied to the polishing pad, relative motion between the body and the polishing pad is generated while the body contacts the polishing pad, a signal from an in-situ eddy current monitoring system during the relative motion while the body contacts the polishing pad, generating, and mechanical vibrations in the polishing system are detected based on a signal from the in-situ eddy current monitoring system.

公开(公告)号：US11199605B2

公开(公告)日：2021-12-14

申请号：US15867372

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC: G01R35/00 ,  C09G1/00 ,  B24B37/04 ,  B24B37/005 ,  C09G1/02 ,  H01L21/67 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321

Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US20210379723A1

公开(公告)日：2021-12-09

申请号：US17280163

申请日：2018-09-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Kun Xu ,  David Maxwell Gage ,  Harry Q. Lee ,  Denis Anatolyevich Ivanov ,  Hassan G. Iravani ,  Doyle E. Bennett ,  Kiran Lall Shrestha

IPC: B24B37/013 ,  H01L21/66

Abstract: A method of compensating for a contribution of conductivity of the semiconductor wafer to a measured trace by an in-situ electromagnetic induction monitoring system includes storing or generating a modified reference trace. The modified reference trace represents measurements of a bare doped reference semiconductor wafer by an in-situ electromagnetic induction monitoring system as modified by a neutral network. The substrate is monitored with an in-situ electromagnetic induction monitoring system to generate a measured trace that depends on a thickness of the conductive layer, and at least a portion of the measured trace is applied to a neural network to generate a modified measured trace. An adjusted trace is generated, including subtracting the modified reference trace from the modified measured trace.

公开(公告)号：US20210379721A1

公开(公告)日：2021-12-09

申请号：US17341245

申请日：2021-06-07

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Harry Q. Lee ,  Benjamin Cherian ,  David Maxwell Gage

IPC: B24B37/005 ,  H01L21/321

Abstract: During polishing of a stack of adjacent conductive layers on a substrate, an in-situ eddy current monitoring system measures sequence of characterizing values. A polishing rate is repeatedly calculated from the sequence of characterizing values repeatedly, one or more adjustments for one or more polishing parameters are repeatedly calculated based on a current polishing rate using a first control algorithm for an initial time period, a change in the polishing rate that meets at least one first predetermined criterion that indicates exposure of the underlying conductive layer is detected, and one or more adjustments for one or more polishing parameters are calculated based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.

公开(公告)号：US20180203090A1

公开(公告)日：2018-07-19

申请号：US15867543

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC: G01R35/00 ,  C09G1/02 ,  B24B37/005 ,  B24B37/04

CPC classification number: G01R35/005 ,  B24B37/005 ,  B24B37/042 ,  C09G1/00 ,  C09G1/02

Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US20180111251A1

公开(公告)日：2018-04-26

申请号：US15726148

申请日：2017-10-05

Applicant: Applied Materials, Inc.

Inventor： Hassan G. Iravani ,  Kun Xu ,  Denis Ivanov ,  Shih-Haur Shen ,  Boguslaw A. Swedek

IPC: B24B49/04 ,  B24B49/10 ,  H01L21/66 ,  G01N27/02

CPC classification number: B24B49/045 ,  B24B49/105 ,  G01N27/025 ,  H01L22/14 ,  H01L22/26

Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

公开(公告)号：US09205527B2

公开(公告)日：2015-12-08

申请号：US13791694

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Tzu-Yu Liu ,  Ingemar Carlsson ,  Hassan G. Iravani ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Doyle E. Bennett

IPC: B24B37/013 ,  B24B37/04 ,  B24B7/22

CPC classification number: B24B37/013 ,  B24B7/228 ,  B24B37/048

Abstract: A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.

Abstract translation: 一种化学机械抛光衬底的方法包括在抛光工位上抛光衬底上的层，在抛光站处用抛光工位进行抛光监测层，原位监测系统监测细长区域，并产生一个 计算所述细长区域的主轴与所述衬底的边缘的切线之间的角度，基于所述角度修改所测量的信号以产生修改的信号，以及至少一个检测抛光终点或修改 基于修改信号的抛光参数。

公开(公告)号：US20150224623A1

公开(公告)日：2015-08-13

申请号：US14179297

申请日：2014-02-12

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Doyle E. Bennett ,  Shih-Haur Shen ,  Hassan G. Iravani ,  Wen-Chiang Tu ,  Tzu-Yu Liu

IPC: B24B49/10 ,  B24B49/02 ,  B24B49/14 ,  B24B37/013

CPC classification number: B24B49/105 ,  B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/14

Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρT of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ρT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.

Abstract translation: 其中，描述了在抛光过程中控制抛光的方法。 该方法包括在时间t从原位监测系统接收经历抛光的基底的导电层的厚度（t）的测量; 在时间t接收与导电层相关的测量温度T（t）; 在测量温度T（t）下计算导电层的电阻率r r; 使用计算的电阻率r来调整厚度的测量值以产生调整的测量厚度; 以及基于所调整的测量厚度检测抛光终点或抛光参数的调整。

公开(公告)号：US20150118766A1

公开(公告)日：2015-04-30

申请号：US14066571

申请日：2013-10-29

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC: H01L21/66 ,  B24B37/013 ,  B24B49/10 ,  H01L21/321

CPC classification number: B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L21/67092 ,  H01L21/67248 ,  H01L22/14 ,  H01L22/26

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

Abstract translation: 控制抛光的方法包括：在第一抛光台处抛光衬底，用第一涡流监测系统监测衬底以产生第一信号，确定第一信号的结束值，以便在第一抛光站抛光衬底 抛光站，确定第一抛光站的第一温度，在第二抛光站抛光衬底，用第二涡流监测系统监测衬底以产生第二信号，确定第二信号的起始值以开始 在所述第二研磨站处抛光所述基板，基于所述结束值，所述起始值和所述第一温度确定所述第二抛光站的增益，以及基于所述第二信号和所述增益来计算第三信号。