公开(公告)号：US5287238A

公开(公告)日：1994-02-15

申请号：US973106

申请日：1992-11-06

申请人： Peter M. Baumgart ,  Bernard Dieny ,  Bruce A. Gurney ,  Jean-Pierre Nozieres ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

发明人： Peter M. Baumgart ,  Bernard Dieny ,  Bruce A. Gurney ,  Jean-Pierre Nozieres ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

IPC分类号： G11B5/39 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetoresistive read sensor based on the spin valve effect and having a multilayered, dual spin valve structure is described. The sensor read element includes first, second and third layers of ferromagnetic material separated from each other by layers of non-magnetic metallic material. The first and third layers of ferromagnetic material, i.e., the outer layers of the structure, have their magnetization orientation fixed, while the second, intermediate ferromagnetic layer is magnetically soft and has its magnetization oriented perpendicular to that of both the outer ferromagnetic layers in the absence of an applied magnetic field. In one preferred embodiment, the two outer ferromagnetic layers have their magnetizations fixed parallel to each other by exchange coupling with adjacent antiferromagnetic layers.

摘要翻译： 描述了基于自旋阀效应并具有多层双自旋阀结构的磁阻读取传感器。 传感器读取元件包括由非磁性金属材料层彼此分离的铁磁材料的第一层，第二层和第三层。 铁磁材料的第一层和第三层，即结构的外层，其磁化取向固定，而第二中间铁磁层是磁性软的并且其磁化方向垂直于外部铁磁层的磁化方向 不存在施加的磁场。 在一个优选实施例中，两个外部铁磁层通过与相邻的反铁磁层交换耦合而使它们的磁化彼此平行地固定。

公开(公告)号：US20130250671A1

公开(公告)日：2013-09-26

申请号：US13876390

申请日：2011-09-29

申请人： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

发明人： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

摘要： A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

摘要翻译： 一种热辅助磁写入装置，包括被称为“参考层”的第一磁性层，被称为呈现可变磁化方向的“存储层”的第二磁性层，位于参考层和存储层之间的间隔件，以及 第一反铁磁层与存储层接触，第一反铁磁层能够捕获存储层的磁化方向。 磁性装置还包括由铁磁材料制成的稳定层，稳定层与第一反铁磁层接触。

公开(公告)号：US08513944B2

公开(公告)日：2013-08-20

申请号：US12903519

申请日：2010-10-13

申请人： Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Lavinia Elena Nistor

发明人： Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Lavinia Elena Nistor

IPC分类号： G01R33/07 ,  G01R33/02

CPC分类号： H01L43/06 ,  B82Y25/00 ,  G01R33/098 ,  G11C11/18 ,  H01F10/3218 ,  H01F10/3236 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/14

摘要： A three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. Layer M is continuous, has a thickness of 1 to 5 nm and the magnetization thereof is parallel to the layer plane in the absence of layers O and O′. There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetizing field of layer M or orienting the magnetization of layer M in a manner substantially perpendicular to the layer plane.

摘要翻译： 三层磁性元件在衬底上包括其上安装有金属磁性层M的第一氧化物，氢化物或氮化物层O，其具有第二氧化物，氢化物或氮化物层O'或非铁磁性层 金属层M'。 层M是连续的，具有1至5nm的厚度，并且其磁化在不存在层O和O'的情况下平行于层平面。 对于等于或大于环境温度的温度范围，界面O / M和M / O'上的垂直于层平面的界面磁各向异性能够降低层M的有效去磁场或使磁化 层M以基本上垂直于层平面的方式。

公开(公告)号：US20130188421A1

公开(公告)日：2013-07-25

申请号：US13820215

申请日：2011-08-31

申请人： Bernard Dieny

发明人： Bernard Dieny

IPC分类号： G11C11/16

CPC分类号： G11C11/161 ,  B82Y25/00 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A magnetic device includes a reference layer, the magnetization direction of which is fixed, and a storage layer, the magnetization direction of which is variable. In a write mode, the magnetization direction of the storage layer is changed so as to store a “1” or a “0” in the storage layer. In a reading mode, the resistance of the magnetic device is measured so as to know what is stored in the storage layer. The magnetic device also includes a control layer, the magnetization direction of which is variable. The magnetization direction of the control layer is controlled so as to increase the effectiveness of the spin-transfer torque in the event writing to the storage layer is desired, and to decrease the effectiveness of the spin-transfer torque in the event reading the information contained in the storage layer, without modifying the information, is desired.

摘要翻译： 磁性装置包括其磁化方向固定的参考层和其磁化方向可变的存储层。 在写入模式中，存储层的磁化方向被改变以在存储层中存储“1”或“0”。 在读取模式中，测量磁性装置的电阻以便知道存储层中存储的内容。 磁性装置还包括其磁化方向可变的控制层。 控制层的磁化方向被控制，以便在需要向存储层写入的情况下提高自旋转移转矩的有效性，并且在读取包含的信息的情况下降低自旋转移转矩的有效性 在存储层中，不需要修改信息。

公开(公告)号：US20130169371A1

公开(公告)日：2013-07-04

申请号：US13702413

申请日：2011-06-09

申请人： Claire Baraduc ,  Bernard Dieny ,  Christophe Thirion ,  Nicolas De Mestier Du Bourg

发明人： Claire Baraduc ,  Bernard Dieny ,  Christophe Thirion ,  Nicolas De Mestier Du Bourg

IPC分类号： H03B28/00 ,  H01F10/32

CPC分类号： H03B28/00 ,  B82Y25/00 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H03B15/006

摘要： A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency.

摘要翻译： 一种包括具有至少两个磁性层的磁性堆叠的自旋转移振荡器，所述两个磁性层中的至少一个是具有可变方向磁化的振荡层，以及电流供给装置，其被配置为使电子流的电流垂直于 磁栈的平面。 磁性堆叠包括在振荡层的表面的电平上产生电流的不均匀性的装置，并且选择由供电装置提供的电流的强度，使得振荡层的磁化具有一致的磁性结构，磁性 配置整体振荡在同一基频。

公开(公告)号：US08329049B2

公开(公告)日：2012-12-11

申请号：US12375272

申请日：2007-06-26

申请人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

发明人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

IPC分类号： B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  B05D3/00

CPC分类号： B81C99/0085

摘要： The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate (1) adapted to receive the nanostructure to form a nanorelief (2) on the substrate, the nanorelief having flanks (4) extending from a bottom (1a) of the substrate and a top face (3) extending from said flanks, and then depositing on the substrate pre-structured in this way a single layer or multilayer coating intended to form the nanostructure; and further comprising: adding to the prestructured substrate or to the coating a separation layer adapted to enable separation of the coating and the substrate by external action of mechanical, thermomechanical or vibratory type; and exerting this external action on the substrate and/or the coating to recover selectively a top portion of the coating by separating it from the top face of the nanorelief so that this top portion constitutes some or all of the nanostructure.

摘要翻译： 本发明涉及一种制造纳米结构的方法，包括以下步骤：预先构建适于接纳纳米结构以在基底上形成纳米疏液（2）的基底（1），所述纳米凹槽具有从底部延伸的侧面（4） （1a）和从所述侧面延伸的顶面（3），然后沉积在预先构造成用于形成纳米结构的单层或多层涂层的基板上; 并且还包括：向所述预结构化基底或所述涂层添加适于通过机械，热机械或振动型的外部作用使所述涂层和所述基底分离的分离层; 并且在衬底和/或涂层上施加这种外部作用以通过将其从纳米溢液的顶面分离而选择性地回收涂层的顶部，使得该顶部构成一部分或全部纳米结构。

公开(公告)号：US08063709B2

公开(公告)日：2011-11-22

申请号：US12525651

申请日：2007-02-21

申请人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

发明人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

IPC分类号： H03B17/00

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H03B15/006

摘要： The invention relates to a method of operating a spin-transfer torque structure to generate voltage oscillations, said structure comprising a first layer of magnetic material having a fixed magnetization vector, a spacer of non magnetic material and a second layer of magnetic material having a free magnetization vector. The method includes the application of a current (jop) through said structure and a magnetic field (Hext) in the plane of the second layer. It makes use of a region of bistability and hysteretic behaviour to trigger and stop the voltage oscillations.

摘要翻译： 本发明涉及一种操作自旋转移转矩结构以产生电压振荡的方法，所述结构包括具有固定的磁化矢量的第一层磁性材料，非磁性材料的间隔物和具有自由基的第二磁性材料层 磁化矢量。 该方法包括通过所述结构施加电流（jop）和在第二层的平面中施加磁场（Hext）。 它利用双稳态和滞后行为的区域来触发和停止电压振荡。

公开(公告)号：US20110013448A1

公开(公告)日：2011-01-20

申请号：US12502467

申请日：2009-07-14

申请人： Jean-Pierre Nozières ,  Bernard Dieny

发明人： Jean-Pierre Nozières ,  Bernard Dieny

IPC分类号： G11C11/15

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction, comprising a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption.

摘要翻译： 一种磁性隧道结，包括具有固定磁化方向的参考层，具有通过使写入电流通过所述磁性隧道结而相对于参考层的磁化方向可调整的磁化方向的第一存储层，以及绝缘层 设置在所述参考层和第一存储层之间; 其特征在于，所述磁性隧道结还包括偏振装置，用于使写入电流的自旋极化，所述写入电流的自旋垂直于参考层的磁化方向; 并且其中所述第一存储层具有高于0.02的阻尼常数。 可以制造通过组装磁性隧道结的阵列而形成的磁存储器件，从而降低功耗。

公开(公告)号：US07821818B2

公开(公告)日：2010-10-26

申请号：US12083398

申请日：2006-10-13

申请人： Bernard Dieny ,  Anatoly Vedyaev ,  Jérôme Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

发明人： Bernard Dieny ,  Anatoly Vedyaev ,  Jérôme Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08

摘要： The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.

摘要翻译： 磁性装置包括磁性装置，该磁性装置包括磁阻隧道结（100），其自身包括：具有沿固定方向的磁化的参考磁性层（120） 存储磁性层（110），其具有在可变的方向上的磁化; 以及用作隧道势垒的中间层（130），其基本上是半导体或电绝缘的，并且将参考磁性层（120）与存储磁性层（110）分离。 中间层（130）的电位分布在所述层（130）的厚度上是不对称的，以便产生作为施加电压的函数的不对称的电流响应。 该器件适用于磁性随机存取存储器。

公开(公告)号：US07626221B2

公开(公告)日：2009-12-01

申请号：US11062926

申请日：2005-02-23

申请人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

发明人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/1659 ,  G11C11/1675

摘要： The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

摘要翻译： 存储器在半导体衬底上包括以行和列布置的每个单元矩阵，并且每个被设计为存储信息位。 列的每个单元包括磁性隧道结，其具有分别连接到线路导体的线路端子和列端子，并且通过晶体管连接到与所述列相关联的第一列导体和第一相邻列。 晶体管的栅极连接到栅极导体。 所述列的每个隧道结的列端子通过附加晶体管连接到与所述列相关联的第二列导体和第二相邻列。 附加晶体管的栅极连接到附加栅极导体。 与单元相关联的两个晶体管可以具有公共电极。