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    Method for drying a semiconductor wafer
    51.
    发明授权
    Method for drying a semiconductor wafer 有权
    干燥半导体晶片的方法

    公开(公告)号：US06289605B1

    公开(公告)日：2001-09-18

    申请号：US09506391

    申请日：2000-02-18

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: F26B300

    CPC classification number: H01L21/02063

    Abstract: The present invention provides a drying method for removing a residual solution from a semiconductor wafer. The semiconductor wafer is placed into a chamber, and then the air pressure of the chamber is lowered from atmospheric pressure to a lower pressure. Next, an inert gas with a predetermined pressure is injected into the chamber to exchange with the dissolved oxygen in the residual solution. The pressure in the chamber is reduced to 0.5˜100 torr so as to lower the boiling point of the solution and to remove the displaced oxygen. Finally, a heating process is performed to completely evaporate the residual solution on the semiconductor wafer.

    Abstract translation: 本发明提供了从半导体晶片去除残留溶液的干燥方法。 将半导体晶片放入室中，然后将室的空气压力从大气压降至较低的压力。 接下来，将具有预定压力的惰性气体注入到室中以与残留溶液中的溶解氧交换。 将室内的压力降低至0.5〜100乇，以降低溶液的沸点并除去置换的氧气。 最后，进行加热处理以完全蒸发半导体晶片上的残余溶液。

    Method of fabricating a semiconductor device
    52.
    发明授权
    Method of fabricating a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08802569B2

    公开(公告)日：2014-08-12

    申请号：US13418589

    申请日：2012-03-13

    Applicant: Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

    Inventor： Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

    IPC: H01L21/302 ,  C23F1/00

    CPC classification number: H01L21/0332 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76837

    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成多个电路器件。 该方法包括在衬底上形成有机层。 有机层形成在多个电路装置上。 该方法包括抛光有机层以使有机层的表面平坦化。 有机层在抛光之前不需要进行热处理。 有机材料在抛光期间是未交联的。 该方法包括在有机层的平坦化表面上沉积LT-膜。 沉积在小于约150摄氏度的温度下进行。 也可以不使用旋涂法进行沉积。 该方法包括在LT膜上形成图案化的光致抗蚀剂层。

    COATING MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY
    53.
    发明申请
    COATING MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY 有权
    涂料的材料和方法

    公开(公告)号：US20140186773A1

    公开(公告)日：2014-07-03

    申请号：US13732944

    申请日：2013-01-02

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/20 ,  H01L21/02

    CPC classification number: G03F7/20 ,  H01L21/02109 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0276

    Abstract: Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.

    Abstract translation: 提供了一种方法，包括提供衬底并在衬底上形成底部抗反射涂层（BARC）。 BARC包括覆盖第二部分的第一部分，其具有与第一部分不同的组成。 不同的组合物可以提供BARC在显影剂中的不同溶解性质。 在BARC的第一部分上形成光致抗蚀剂层。 然后照射和显影光致抗蚀剂层。 显影剂包括使用显影剂去除光致抗蚀剂层的区域和BARC的第一和第二部分的区域。

    SURFACE-MODIFIED MIDDLE LAYERS
    54.
    发明申请
    SURFACE-MODIFIED MIDDLE LAYERS 有权
    表面改性中间层

    公开(公告)号：US20140011139A1

    公开(公告)日：2014-01-09

    申请号：US13543582

    申请日：2012-07-06

    Applicant: Fang Lin ,  Ching-Yu Chang

    Inventor： Fang Lin ,  Ching-Yu Chang

    IPC: C09D135/02 ,  G03F7/20

    CPC classification number: G03F7/09 ,  G03F7/0046

    Abstract: Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.

    Abstract translation: 描述制造半导体器件的方法和材料。 该方法包括提供衬底，在衬底上形成包含含氟材料的表面改性中间层（SM-ML），在SM-ML上形成光致抗蚀剂层，将光致抗蚀剂层暴露于曝光能量;以及 显影光致抗蚀剂层。

    METHOD AND COMPOSITION OF A DUAL SENSITIVE RESIST
    55.
    发明申请
    METHOD AND COMPOSITION OF A DUAL SENSITIVE RESIST 有权
    双敏感的方法和组合

    公开(公告)号：US20130266899A1

    公开(公告)日：2013-10-10

    申请号：US13442687

    申请日：2012-04-09

    Applicant: Chen-Hau Wu ,  Ching-Yu Chang

    Inventor： Chen-Hau Wu ,  Ching-Yu Chang

    IPC: G03F7/027 ,  G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0392

    Abstract: The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy.

    Abstract translation: 本公开提供敏感材料。 敏感材料包括响应于与酸的反应而将可溶于碱溶液的聚合物; 响应于辐射能分解形成底座的多个光源发生器（PBG）; 以及响应于热能产生酸的热敏组分。

    Conformal etch material and process
    57.
    发明授权
    Conformal etch material and process 有权
    保形蚀刻材料和工艺

    公开(公告)号：US08349739B2

    公开(公告)日：2013-01-08

    申请号：US12546812

    申请日：2009-08-25

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/302

    CPC classification number: H01L21/31111 ,  H01L21/30604 ,  H01L21/32134

    Abstract: The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

    Abstract translation: 本公开提供了蚀刻基板的方法。 该方法包括在基板上形成抗蚀剂图案; 将蚀刻化学流体施加到所述基底，其中所述蚀刻化学流体包括扩散控制材料; 去除蚀刻化学液体; 并去除抗蚀剂图案。

    Method and photoresist with zipper mechanism
    58.
    发明授权
    Method and photoresist with zipper mechanism 有权
    方法和光刻胶拉链机制

    公开(公告)号：US08323870B2

    公开(公告)日：2012-12-04

    申请号：US12916759

    申请日：2010-11-01

    Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

    Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC classification number: G03F7/0382 ,  G03F7/0392 ,  G03F7/325

    Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.

    Abstract translation: 本公开提供了在光刻图案化工艺中使用的抗蚀剂。 抗蚀剂包括具有多个拉链分子的聚合材料，每个拉链分子包括第一拉链部分和第二拉链部分，其中第一和第二拉链部分各自包括成对地结合在一起的多个拉链分支并且可切割成热能之一 ，辐射能和化学反应。

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