公开(公告)号：US08603426B1

公开(公告)日：2013-12-10

申请号：US13730432

申请日：2012-12-28

申请人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zürcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

发明人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zürcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C01B21/068

CPC分类号： C01B6/00 ,  C01B6/003 ,  C01B6/34

摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US08236916B1

公开(公告)日：2012-08-07

申请号：US12343200

申请日：2008-12-23

申请人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

发明人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C08G77/00 ,  C07F7/02 ,  C07F7/21

CPC分类号： C07F7/0896 ,  C08G77/60 ,  C08L83/16

摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H-[(AHR)n(c-AmHpm-2)q]—H, where each instance of A is independently Si or Ge; R is H, -AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14-a, the formula AkHgR1′h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.

摘要翻译： 公开了聚硅烷，含有它们的油墨及其制备方法。 聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 一方面，该方法通常包括将式AHaR14-a，式AkHgR1'h和/或式c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂组合的步骤 （或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。 通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛， 有或没有使用紫外线照射。

公开(公告)号：US08211396B1

公开(公告)日：2012-07-03

申请号：US10950373

申请日：2004-09-24

申请人： Wenzhuo Guo ,  Fabio Zürcher ,  Joerg Rockenberger ,  Klaus Kunze ,  Vladimir K. Dioumaev ,  Brent Ridley ,  James Montague Cleeves

发明人： Wenzhuo Guo ,  Fabio Zürcher ,  Joerg Rockenberger ,  Klaus Kunze ,  Vladimir K. Dioumaev ,  Brent Ridley ,  James Montague Cleeves

IPC分类号： C01B33/00

CPC分类号： C01B33/00 ,  C01B33/04

摘要： Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.

摘要翻译： 杂环硅烷化合物及其制备方法。 这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂的硅烷膜印刷或旋涂到可以容易地转化成掺杂的非晶硅膜（也可以在一定程度上被氢化）的基底上，或掺杂多晶 半导体薄膜适用于电子设备。 因此，本发明有利地提供了来自“掺杂液体硅”组合物的商业品质和掺杂半导体膜的量。

公开(公告)号：US07981482B1

公开(公告)日：2011-07-19

申请号：US11455976

申请日：2006-06-19

申请人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

发明人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

IPC分类号： C08J7/06

CPC分类号： H01L21/02576 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628

摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”

摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。

公开(公告)号：US07723457B1

公开(公告)日：2010-05-25

申请号：US12347911

申请日：2008-12-31

申请人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

发明人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C08G77/06 ,  C08G77/12 ,  C08G77/04 ,  C07F7/04 ,  C07F7/08

CPC分类号： C07F7/0896 ,  C08G77/60 ,  C08L83/16

摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H-[(AHR)n(c-AmHpm-2)q]—H, where each instance of A is independently Si or Ge; R is H, -AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14-a, the formula AkHgR1′h and/or the formula c-AmHpmR1fm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.

摘要翻译： 公开了聚硅烷，含有它们的油墨及其制备方法。 聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 在一方面，该方法通常包括以下步骤：将式AHaR14-a的硅烷化合物，式AkHgR1'h和/或式c-AmHpmR1fm与式R4xR5yMXz的催化剂 （或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。 通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛， 有或没有使用紫外线照射。

公开(公告)号：US07674926B1

公开(公告)日：2010-03-09

申请号：US10956714

申请日：2004-10-01

申请人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Fabio Zūrcher ,  Joerg Rockenberger ,  James Montague Cleeves

发明人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Fabio Zūrcher ,  Joerg Rockenberger ,  James Montague Cleeves

IPC分类号： C07F5/02 ,  C07F9/02 ,  C07F9/30 ,  C07F7/02

CPC分类号： C07F9/5004

摘要： Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.

摘要翻译： 掺杂基取代的（环）硅烷化合物，含有这些化合物的液相组合物及其制备方法。 这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂硅烷膜印刷或旋涂到基底上，该基底可以容易地转化为适合于电子器件的掺杂的非晶或多晶硅膜。 因此，本发明有利地从掺杂的“液态硅”组合物提供商业品质和掺杂半导体膜的量。

公开(公告)号：US08853677B1

公开(公告)日：2014-10-07

申请号：US13162193

申请日：2011-06-16

申请人： Joerg Rockenberger ,  Yu Chen ,  Fabio Zürcher ,  Scott Haubrich

发明人： Joerg Rockenberger ,  Yu Chen ,  Fabio Zürcher ,  Scott Haubrich

IPC分类号： H01L29/08

CPC分类号： H01L21/28518 ,  C09D11/52 ,  H01L21/288 ,  H01L21/76838 ,  H01L29/456 ,  H01L29/458

摘要： Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.

摘要翻译： 公开了金属油墨组合物，形成这种组合物的方法，以及形成导电层的方法。 油墨组合物包括本体金属，过渡金属源和有机溶剂。 过渡金属源可以是能够形成硅化物的过渡金属，其量为0.01至50at。 过渡金属相对于本体金属的％。 导电结构可以使用这样的油墨组合物，通过在基底上形成含硅层，在含硅层上印刷金属油墨组合物，并固化组合物。 本发明的金属油墨具有高导电性并与硅形成低电阻接触，并减少制造集成电路所需的油墨数量和印刷步骤。

公开(公告)号：US07977240B1

公开(公告)日：2011-07-12

申请号：US12371239

申请日：2009-02-13

申请人： Joerg Rockenberger ,  Yu Chen ,  Fabio Zürcher ,  Scott Haubrich

发明人： Joerg Rockenberger ,  Yu Chen ,  Fabio Zürcher ,  Scott Haubrich

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28518 ,  C09D11/52 ,  H01L21/288 ,  H01L21/76838 ,  H01L29/456 ,  H01L29/458

摘要： Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.

摘要翻译： 公开了金属油墨组合物，形成这种组合物的方法，以及形成导电层的方法。 油墨组合物包括本体金属，过渡金属源和有机溶剂。 过渡金属源可以是能够形成硅化物的过渡金属，其量为0.01至50at。 过渡金属相对于本体金属的％。 导电结构可以使用这样的油墨组合物，通过在基底上形成含硅层，在含硅层上印刷金属油墨组合物，并固化组合物。 本发明的金属油墨具有高导电性并与硅形成低电阻接触，并减少制造集成电路所需的油墨数量和印刷步骤。

公开(公告)号：US20100244133A1

公开(公告)日：2010-09-30

申请号：US12797274

申请日：2010-06-09

申请人： Arvind KAMATH ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

发明人： Arvind KAMATH ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L21/316 ,  H01L21/02211 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/3165 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78621

摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

公开(公告)号：US07294449B1

公开(公告)日：2007-11-13

申请号：US10749876

申请日：2003-12-31

申请人： Christopher Gudeman ,  Joerg Rockenberger ,  Brian Hubert ,  Criswell Choi ,  Alfred Renaldo

发明人： Christopher Gudeman ,  Joerg Rockenberger ,  Brian Hubert ,  Criswell Choi ,  Alfred Renaldo

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/0047 ,  C23C18/06 ,  C23C18/14 ,  H05K3/02 ,  H05K2201/0257 ,  H05K2203/0514 ,  H05K2203/121

摘要： Materials, compounds and compositions for radiation patternable functional thin films, methods of synthesizing such materials and compounds, and methods for forming an electronically functional thin film and structures including such a film. The compounds and compositions generally include (a) nanoparticles of an electronically functional material or substance and (b) ligands containing a (photo)reactive group. The method generally includes the steps of (1) irradiating the compound and/or composition, and (2) curing the irradiated compound and/or composition, generally to form an electronically functional film. The functional thin film includes a sintered mixture of nanoparticles. The thin film exhibits improved morphology and/or resolution relative to an otherwise identical structure made by an identical process, but without the (photo)functional group on the ligand, and/or relative to an otherwise identical material patterned by a conventional graphics art-based printing process. The present process also exhibits improved throughput relative to conventional photolithographic processing, by eliminating a metal deposition step. The present invention advantageously provides functional thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling elimination of a number of conventional photolithographic processing steps (e.g., functional material sputtering, PECVD, etc.).

摘要翻译： 用于辐射可图形功能薄膜的材料，化合物和组合物，合成这种材料和化合物的方法，以及形成电子功能薄膜的方法和包括这种膜的结构。 化合物和组合物通常包括（a）电子功能材料或物质的纳米颗粒和（b）含有（光）反应性基团的配体。 该方法通常包括以下步骤：（1）照射化合物和/或组合物，和（2）固化照射的化合物和/或组合物，通常形成电子功能膜。 功能性薄膜包括纳米颗粒的烧结混合物。 相对于通过相同方法制备的其它相同的结构，但是没有配体上的（光）官能团，和/或相对于通过常规图形艺术图案化的其它相同材料，薄膜表现出改善的形态和/或分辨率。 基于打印过程。 通过消除金属沉积步骤，本方法还显示相对于常规光刻处理的改善的生产量。 本发明有利地提供具有适合用于电子应用（例如显示装置或RF ID标签）的质量的功能薄膜结构，同时能够消除许多常规光刻处理步骤（例如，功能材料溅射，PECVD等） 。