公开(公告)号：US07009256B2

公开(公告)日：2006-03-07

申请号：US10945719

申请日：2004-09-20

申请人： Franz Dietz ,  Michael Graf

发明人： Franz Dietz ,  Michael Graf

IPC分类号： H01L23/62

CPC分类号： H01L27/0259 ,  H01L27/1203

摘要： A monolithically integratable semiconductor structure serves for over-voltage protection in an integrated circuit or as a normal diode. The structure includes an insulating layer between a substrate and a semiconductor layer of first conductivity type, and several layers formed in the semiconductor layer. First and second layers of second conductivity type are spaced apart from one another. A third layer of first conductivity type contacts the second layer. A fourth layer of first conductivity type directly contacts and surrounds the second and third layers. A fifth layer of first conductivity type and higher dopant concentration than the semiconductor layer is disposed under the first layer. The first layer surrounds the second, third and fourth layers essentially in a ring-shape. A first electrode contacts the first layer. A second electrode contacts the second and third layers.

摘要翻译： 单片可积分半导体结构用于集成电路或普通二极管中的过电压保护。 该结构包括在基板和第一导电类型的半导体层之间的绝缘层，以及形成在半导体层中的若干层。 第一和第二第二导电类型彼此间隔开。 第一导电类型的第三层接触第二层。 第一导电类型的第四层直接接触并围绕第二和第三层。 第一导电类型的第五层和比半导体层高的掺杂剂浓度设置在第一层之下。 第一层围绕第二层，第三层和第四层，基本上呈环形。 第一电极接触第一层。 第二电极接触第二和第三层。

公开(公告)号：US20050062110A1

公开(公告)日：2005-03-24

申请号：US10945719

申请日：2004-09-20

申请人： Franz Dietz ,  Michael Graf

发明人： Franz Dietz ,  Michael Graf

IPC分类号： H01L23/60 ,  H01L23/62 ,  H01L27/02 ,  H01L27/082 ,  H01L27/12 ,  H01L29/76

CPC分类号： H01L27/0259 ,  H01L27/1203

摘要： A monolithically integratable semiconductor structure serves for over-voltage protection in an integrated circuit or as a normal diode. The structure includes an insulating layer between a substrate and a semiconductor layer of first conductivity type, and several layers formed in the semiconductor layer. First and second layers of second conductivity type are spaced apart from one another. A third layer of first conductivity type contacts the second layer. A fourth layer of first conductivity type directly contacts and surrounds the second and third layers. A fifth layer of first conductivity type and higher dopant concentration than the semiconductor layer is disposed under the first layer. The first layer surrounds the second, third and fourth layers essentially in a ring-shape. A first electrode contacts the first layer. A second electrode contacts the second and third layers.

摘要翻译： 单片可积分半导体结构用于集成电路或普通二极管中的过电压保护。 该结构包括在基板和第一导电类型的半导体层之间的绝缘层，以及形成在半导体层中的若干层。 第一和第二第二导电类型彼此间隔开。 第一导电类型的第三层接触第二层。 第一导电类型的第四层直接接触并围绕第二和第三层。 第一导电类型的第五层和比半导体层高的掺杂剂浓度设置在第一层之下。 第一层围绕第二层，第三层和第四层，基本上呈环形。 第一电极接触第一层。 第二电极接触第二和第三层。

公开(公告)号：US09103031B2

公开(公告)日：2015-08-11

申请号：US12144968

申请日：2008-06-24

申请人： John J. Hautala ,  Michael Graf ,  Yan Shao ,  Brian S. Freer

发明人： John J. Hautala ,  Michael Graf ,  Yan Shao ,  Brian S. Freer

IPC分类号： C23C14/00 ,  C23C14/48 ,  H01J27/02 ,  C23C14/10 ,  C23C14/22 ,  H01J27/00

CPC分类号： C23C14/48 ,  C23C14/10 ,  C23C14/221 ,  H01J27/026 ,  H01J2237/0812

摘要： A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

摘要翻译： 描述了在基板上形成薄膜的方法。 该方法包括在减压环境中提供衬底，以及在减压环境中从加压气体混合物产生气体簇离子束（GCIB）。 设置光束加速电位和光束剂量以实现高达约300埃的薄膜厚度，并且实现薄膜上表面的表面粗糙度小于约20埃。 GCIB根据光束加速电位被加速，并且根据光束剂量将加速的GCIB照射到基底的至少一部分上。 通过这样做，薄膜在衬底的至少一部分上生长以获得厚度和表面粗糙度。

公开(公告)号：US08981322B2

公开(公告)日：2015-03-17

申请号：US12428945

申请日：2009-04-23

申请人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

发明人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

IPC分类号： G21K5/04 ,  H01J37/08 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J37/317 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0825 ,  H01J2237/0827

摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.

摘要翻译： 公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层 底物。 多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组 的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

公开(公告)号：US08097860B2

公开(公告)日：2012-01-17

申请号：US12732818

申请日：2010-03-26

申请人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

发明人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

IPC分类号： H01J37/317 ,  H01J49/10 ,  H01J27/02

CPC分类号： H01J37/08 ,  C23C14/221 ,  C23C16/513 ,  H01J37/305 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/0825 ,  H01J2237/0827

摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.

摘要翻译： 描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。 此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

公开(公告)号：US08089052B2

公开(公告)日：2012-01-03

申请号：US12423066

申请日：2009-04-14

申请人： Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

发明人： Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

IPC分类号： H01J49/10 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/061 ,  H01J2237/0835

摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

摘要翻译： 一种离子注入机系统，包括用于产生离子流或离子束的离子源。 离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。 具有所需特性的离子提取孔覆盖室的电离区域。 在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。 一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。 耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。 一个替代实施例具有两个限定可调节孔的移动板部分。

公开(公告)号：US20100193701A1

公开(公告)日：2010-08-05

申请号：US12428945

申请日：2009-04-23

申请人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

发明人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

IPC分类号： H01J27/00 ,  G21K1/00

CPC分类号： H01J37/08 ,  H01J37/317 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0825 ,  H01J2237/0827

摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.

摘要翻译： 公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层 底物。 多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组 的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

公开(公告)号：US20100193472A1

公开(公告)日：2010-08-05

申请号：US12732818

申请日：2010-03-26

申请人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

发明人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

IPC分类号： H01J37/317 ,  H01J37/02 ,  H01J37/305 ,  C23F1/02 ,  C23C14/48

CPC分类号： H01J37/08 ,  C23C14/221 ,  C23C16/513 ,  H01J37/305 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/0825 ,  H01J2237/0827

摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.

摘要翻译： 描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。 此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

公开(公告)号：US20090266997A1

公开(公告)日：2009-10-29

申请号：US12423066

申请日：2009-04-14

申请人： Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

发明人： Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

IPC分类号： H01J3/14 ,  H01J27/00

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/061 ,  H01J2237/0835

摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

摘要翻译： 一种离子注入机系统，包括用于产生离子流或离子束的离子源。 离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。 具有所需特性的离子提取孔覆盖室的电离区域。 在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。 一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。 耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。 一个替代实施例具有两个限定可调节孔的移动板部分。

公开(公告)号：US20060113489A1

公开(公告)日：2006-06-01

申请号：US11000023

申请日：2004-11-30

申请人： Andrew Ray ,  Michael Graf

发明人： Andrew Ray ,  Michael Graf

IPC分类号： H01J37/08

CPC分类号： H01L21/265 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/30411

摘要： A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

摘要翻译： 一种用于优化离子注入的方法，其中通过离子束在两维中扫描基底。 该方法提供了包括离子束的电流，离子的剂量和数量的衬底中的一种或多种在慢扫描方向上通过光束的工艺配方。 根据工艺配方对梁进行成型，确定梁的尺寸。 基于植入和工艺配方的期望均匀性，选择快速扫描方向上的多个不同扫描速度之一。 基于所需的均匀性，基底的生产时间，期望的最小离子束电流和一个或多个基底条件中的一个或多个来控制工艺配方。 基于植入的剂量来选择慢扫描方向上的多个速度之一。