公开(公告)号：US20110049640A1

公开(公告)日：2011-03-03

申请号：US12854264

申请日：2010-08-11

申请人： Frank Feustel ,  Kai Frohberg ,  Thomas Werner

发明人： Frank Feustel ,  Kai Frohberg ,  Thomas Werner

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L21/302

CPC分类号： H01L21/823807 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/7843

摘要： In a replacement gate approach for forming high-k metal gate electrodes in semiconductor devices, a tapered configuration of the gate openings may be accomplished by using a tensile stressed dielectric material provided laterally adjacent to the gate electrode structure. Consequently, superior deposition conditions may be achieved while the tensile stress component may be efficiently used for the strain engineering in one type of transistor. Furthermore, an additional compressively stressed dielectric material may be applied after providing the replacement gate electrode structures.

摘要翻译： 在用于在半导体器件中形成高k金属栅电极的替代栅极方法中，栅极开口的锥形配置可以通过使用横向邻近栅电极结构设置的拉应力电介质材料来实现。 因此，可以实现优异的沉积条件，同时可以有效地将拉伸应力分量用于一种类型的晶体管中的应变工程。 此外，可以在提供替换栅电极结构之后施加附加的压缩应力介电材料。

公开(公告)号：US20100301486A1

公开(公告)日：2010-12-02

申请号：US12785726

申请日：2010-05-24

申请人： Kai Frohberg ,  Frank Feustel ,  Thomas Werner

发明人： Kai Frohberg ,  Frank Feustel ,  Thomas Werner

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844 ,  H01L2221/1063

摘要： Contact elements of sophisticated semiconductor devices may be formed by lithographical patterning, providing a spacer element for defining the final critical width in combination with increasing a width of the contact opening prior to depositing the spacer material. The width may be increased, for instance by ion sputtering, thereby resulting in superior process conditions during the deposition of a contact metal. As a result, the probability of generating contact failures for contact elements having critical dimensions of approximately 50 nm and less may be significantly reduced.

摘要翻译： 可以通过光刻图案形成复杂半导体器件的接触元件，提供用于在沉积间隔物材料之前结合增加接触开口的宽度来限定最终临界宽度的间隔元件。 可以例如通过离子溅射来增加宽度，从而在沉积接触金属期间产生优异的工艺条件。 结果，可以显着地减少关键尺寸为约50nm及更小的接触元件产生接触故障的可能性。

公开(公告)号：US07833874B2

公开(公告)日：2010-11-16

申请号：US11534726

申请日：2006-09-25

申请人： Kai Frohberg ,  Patrick Press ,  Thomas Werner

发明人： Kai Frohberg ,  Patrick Press ,  Thomas Werner

IPC分类号： H01L21/76

CPC分类号： H01L21/84 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/1203

摘要： By forming a non-oxidizable liner in an isolation trench and selectively modifying the liner within the isolation trench, the stress characteristics of the isolation trench may be adjusted. In one embodiment, a high compressive stress may be obtained by treating the liner with an ion bombardment and subsequently exposing the device to an oxidizing ambient at elevated temperatures, thereby incorporating silicon dioxide into the non-oxidizable material. Hence, an increased compressive stress may be generated within the non-oxidizable layer.

摘要翻译： 通过在隔离沟槽中形成不可氧化的衬垫并且选择性地修改隔离沟槽内的衬垫，可以调节隔离沟槽的应力特性。 在一个实施例中，可以通过用离子轰击处理衬垫并随后在升高的温度下将器件暴露于氧化环境，从而将二氧化硅掺入到不可氧化的材料中，可获得高的压缩应力。 因此，可以在非可氧化层内产生增加的压应力。

公开(公告)号：US20100197133A1

公开(公告)日：2010-08-05

申请号：US12693030

申请日：2010-01-25

申请人： Thomas Werner ,  Kai Frohberg ,  Frank Feustel

发明人： Thomas Werner ,  Kai Frohberg ,  Frank Feustel

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L21/76811 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76816 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a “via first/trench last” approach for forming metal lines and vias in a metallization system of a semiconductor device, a combination of two hard masks may be used, wherein the desired lateral size of the via openings may be defined on the basis of spacer elements, thereby resulting in significantly less demanding lithography conditions compared to conventional approaches.

摘要翻译： 在用于在半导体器件的金属化系统中形成金属线和通孔的“通过第一/沟槽最后”方法中，可以使用两个硬掩模的组合，其中通孔的所需横向尺寸可以基于 的间隔元件，从而与常规方法相比导致显着较低要求的光刻条件。

公开(公告)号：US20090243116A1

公开(公告)日：2009-10-01

申请号：US12355112

申请日：2009-01-16

申请人： Frank Feustel ,  Thomas Werner ,  Michael Grillberger ,  Kai Frohberg

发明人： Frank Feustel ,  Thomas Werner ,  Michael Grillberger ,  Kai Frohberg

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76877 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76835 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a protection layer prior to the application of the planarization layer during a dual damascene strategy for first patterning vias and then trenches, enhanced etch fidelity may be accomplished. In other aspects disclosed herein, via openings and trenches may be patterned in separate steps, which may be accomplished by different etch behaviors of respective dielectric materials and/or the provision of an appropriate etch stop layer, while filling the via opening and the trench with a barrier material and a highly conductive metal may be achieved in a common fill sequence. Hence, the via opening may be formed on the basis of a reduced aspect ratio, while nevertheless providing a highly efficient overall process sequence.

摘要翻译： 通过在用于首先图形化通孔和沟槽的双镶嵌策略期间施加平坦化层之前形成保护层，可以实现增强的蚀刻保真度。 在本文公开的其他方面，通孔开口和沟槽可以在单独的步骤中被图案化，其可以通过各个介电材料的不同蚀刻行为和/或提供适当的蚀刻停止层来实现，同时将通孔开口和沟槽填充 可以在共同的填充序列中实现阻挡材料和高导电性金属。 因此，可以基于减小的纵横比来形成通孔开口，同时提供高效的总体工艺顺序。

公开(公告)号：US07500382B2

公开(公告)日：2009-03-10

申请号：US10551812

申请日：2004-04-01

申请人： Thomas Werner

发明人： Thomas Werner

IPC分类号： G01M3/20 ,  G01M3/38

CPC分类号： G01M3/228

摘要： A method for the detection of leaks in a heat exchanger having discrete flow paths for working fluid and heat exchange fluid, respectively, the method comprises introduction of a detection fluid within one of said flow paths and allowing air to flow through the other of said flow paths causing the detection fluid to pass in different directions in said one flow path, and detecting any detection fluid which has leaked from one flow path to said other flow path.

摘要翻译： 一种用于检测分别具有用于工作流体和热交换流体的流动路径的热交换器中的泄漏的方法，所述方法包括在所述流动路径之一内引入检测流体，并允许空气流过所述流体中的另一个 使所述检测流体在所述一个流路中沿不同方向通过的路径，以及检测从一个流路泄漏到所述另一个流路的任何检测流体。

公开(公告)号：US20080133613A1

公开(公告)日：2008-06-05

申请号：US11984040

申请日：2007-11-13

申请人： Thomas Werner ,  Claus Vetter ,  Lorenzo Gulli ,  Erik Svensson ,  Tatjana Kostic

发明人： Thomas Werner ,  Claus Vetter ,  Lorenzo Gulli ,  Erik Svensson ,  Tatjana Kostic

IPC分类号： G06F17/30

CPC分类号： G06F9/52

摘要： The present disclosure facilitates the interoperability between different local applications. Related local data objects are referenced via global objects or reference containers within a global data model or a global address space of an integration solution. The present disclosure assumes that the integration solution is per default in a consistent state, e.g., an engineered or initially configured global address space is regarded as consistent, and all software components that operate within this space assume that the information they access is valid and likewise consistent. The local applications are the only components that can interact with the global address space and introduce invalidations, they are continuously monitored for changes. Invalidation and subsequent synchronization or restoration of consistency is performed upon a particular triggering event related to a change in a local application object (such as an insertion or removal of an object or a modification of an attribute thereof) or related to a changing application or adapter status (component shutdown/startup).

摘要翻译： 本公开有利于不同本地应用之间的互操作性。 相关的本地数据对象通过集成解决方案的全局数据模型或全局地址空间中的全局对象或引用容器进行引用。 本公开假定集成解决方案是以一致的状态为默认的，例如，被设计或初始配置的全局地址空间被认为是一致的，并且在该空间内操作的所有软件组件假设他们访问的信息是有效的，同样地 一致 本地应用程序是唯一可与全局地址空间进行交互并引入无效的组件，它们将不断地被监视以进行更改。 在与本地应用对象的变化相关的特定触发事件（例如，对象的插入或移除或其属性的修改）或与改变的应用或适配器有关的特定触发事件上执行无效和随后的同步或恢复 状态（组件关闭/启动）。

公开(公告)号：US20080057705A1

公开(公告)日：2008-03-06

申请号：US11696226

申请日：2007-04-04

申请人： Frank Feustel ,  Kai Frohberg ,  Thomas Werner

发明人： Frank Feustel ,  Kai Frohberg ,  Thomas Werner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76823 ,  H01L21/76825

摘要： By forming a conductive material within an etch mask for an anisotropic etch process for patterning openings, such as vias, in a dielectric layer of a metallization structure, the probability for arcing events may be reduced, since excess charge may be laterally distributed. For example, an additional sacrificial conductive layer may be formed or an anti-reflecting coating (ARC) may be provided in the form of a conductive material in order to obtain the lateral charge distribution.

摘要翻译： 通过在蚀刻掩模内形成用于各向异性蚀刻工艺的导电材料，用于图案化金属化结构的电介质层中的诸如通路的开口，因为过量电荷可能横向分布，所以可以减小电弧事件的概率。 例如，可以形成附加的牺牲导电层，或者可以以导电材料的形式提供抗反射涂层（ARC），以获得横向电荷分布。

公开(公告)号：US20080026492A1

公开(公告)日：2008-01-31

申请号：US11695657

申请日：2007-04-03

申请人： Ralf Richter ,  Frank Feustel ,  Thomas Werner ,  Kai Frohberg

发明人： Ralf Richter ,  Frank Feustel ,  Thomas Werner ,  Kai Frohberg

IPC分类号： H01L21/469 ,  H01L21/66

CPC分类号： H01L21/02074 ,  H01L21/0209 ,  H01L21/02096

摘要： By providing a protective layer in an intermediate manufacturing stage, an increased surface protection with respect to particle contamination and surface corrosion may be achieved. In some illustrative embodiments, the protective layer may be used during an electrical test procedure, in which respective contact portions are contacted through the protective layer, thereby significantly reducing particle contamination during a respective measurement process.

摘要翻译： 通过在中间制造阶段提供保护层，可以实现相对于颗粒污染和表面腐蚀的增加的表面保护。 在一些说明性实施例中，保护层可以在电测试过程中使用，其中相应的接触部分通过保护层接触，从而在相应的测量过程中显着地减少颗粒污染。

公开(公告)号：US20070276970A1

公开(公告)日：2007-11-29

申请号：US10593095

申请日：2004-03-17

申请人： Thomas Werner ,  Claus Vetter ,  Erik Svensson ,  Thomas Koch

发明人： Thomas Werner ,  Claus Vetter ,  Erik Svensson ,  Thomas Koch

IPC分类号： G06F17/30

CPC分类号： H04L41/0869 ,  H04L41/00

摘要： Attribute consistency works on the comparison of a reference value against the online value of the attributes, which are retrieved from the corresponding system. In order to know which attributes need to be considered for consistency, a list of relevant attributes of each entity type in each application is stored together with the reference value of the entity. This attribute list is used by the consistency service. Therefore several attribute values of one entity in one system can be included in a combined “hash” value. At start-up or in the engineering phase, this reference value is computed out of the defined attribute list. At the time of a consistency check, the values of the attributes are read and a “hash” value is calculated with the same algorithm as the reference value. If those two values differ, an inconsistency occurred. The inventive method allows validating consistency of attributes of an entity in one of the participating applications. Any inconsistency can be propagated to all other participating applications which then may trigger functionality accordingly.

摘要翻译： 属性一致性用于比较参考值与属性的在线值，从相应的系统检索。 为了知道哪些属性需要考虑一致性，每个应用程序中每个实体类型的相关属性的列表与实体的参考值一起存储。 该属性列表由一致性服务使用。 因此，一个系统中的一个实体的几个属性值可以被包括在组合的“散列”值中。 在启动或工程阶段，该参考值是从定义的属性列表中计算的。 在一致性检查时，读取属性的值，并使用与参考值相同的算法计算“哈希”值。 如果这两个值不同，则发生不一致。 本发明的方法允许验证一个参与应用中的实体的属性的一致性。 任何不一致都可以传播到所有其他参与的应用程序，然后可以相应地触发功能。