Abstract:
An imprint apparatus molds resin dispensed on a shot region of a substrate with a mold and forms a pattern of resin on the shot region. The apparatus includes a mold stage configured to hold the mold, a substrate stage configured to hold the substrate, a drive mechanism configured to change a relative positional relationship between the mold stage and the substrate stage in an X-Y plane that defines a coordinate of the shot region and a Z-axis direction perpendicular to the X-Y plane, and a controller. The controller is configured to control the drive mechanism so that the mold and the shot region perform relative vibration, in the X-Y plane, with respect to a relative position where the mold and the shot region align, and a distance between the mold and the shot region decreases in the Z-axis direction in parallel with the vibration, and the resin is molded by the mold.
Abstract:
An imprint apparatus, comprising a first holder for holding a mold having an imprint pattern; a second holder for holding a workpiece to which the imprint pattern is transferred; a first illumination system for irradiating a mark for determining a position of the mold and a mark for determining a position of the workpiece with light; a first and second optical systems for imaging the marks for the mold and workpiece at a first and second observation points respectively; an imaging optical system; a first and second image pick-up devices for observing the marks for the mold and workpiece respectively; and at least one of a first drive mechanism for moving the first image pick-up device while following movement of the first observation point and a second drive mechanism for moving the second image pick-up device while following movement of the second observation point.
Abstract:
An imaging optical system for imaging a pattern of an object plane onto an image plane includes a first imaging optical system for imaging at a first imaging position, the first imaging optical system having a magnification α in a vacuum atmosphere, and a second imaging optical system for imaging at a second imaging position, the second imaging optical system having a magnification β in the vacuum atmosphere, wherein when an environment in which the imaging optical system is placed changes from the vacuum atmosphere to an air atmosphere or vise versa, a direction of the first imaging position that moves along an optical axis is opposite to a direction of the second imaging position that moves along the optical axis.
Abstract:
A shape measuring method for measuring a shape of a surface of an object. The method includes a first measuring step for measuring the surface of the object by detecting light from the object, and a second measuring step for measuring the surface of the object by relatively scanning a probe and the object. A scanning speed changes on the basis of the result of the first measurement step.
Abstract:
A pattern forming method for forming a pattern includes: preparing a mold 104 provided with a first surface including a pattern area 1000, a second surface located opposite from the first surface, and an alignment mark 2070 provided at a position at which the alignment mark 2070 is away from the second surface and is close to the first surface; contacting the pattern area 1000 of the mold 104 with the coating material disposed on a substrate 5000; obtaining information about positions of the mold 104 and the substrate 5000 by using the alignment mark 2070 and a mark 5300 provided to the substrate 5000 in a state in which the coating material is disposed on the substrate 5000 at a portion where the alignment mark 2070 and the substrate 5000 are opposite to each other; and effecting alignment of the substrate 5000 with the mold 104 with high accuracy on the basis of the information.
Abstract:
A position detection method for detecting the position of marks includes the following steps: a step for detecting first information relating to the position of the mark by detecting light from the mark under first measurement conditions; a step for detecting second information relating to the position of the mark by detecting light from the mark under second measurement conditions which differ from the first measurement conditions; and a step for detecting the position of the mark based on the first and second information, thereby providing a high-precision position detecting method and device serving as an alignment or overlaying detection device in an exposure apparatuses used in manufacturing semiconductor devices, wherein position detection precision is not lost even in the event that the alignment marks are not symmetrical or there are irregularities in the non-symmetry of multiple alignment marks within the same wafer.
Abstract:
An apparatus measures a surface position of an object. The apparatus includes an array of members, each of which comprises a probe for an atomic force from the object and is configured to move in accordance with the atomic force, an optical system configured to project a measurement light onto each of the array of members and to receive the measurement light reflected off each of the array of members, and a detector configured to detect the measurement light directed through the optical system with respect to each of the array of members.
Abstract:
A position detection method for detecting the position of marks comprises the following steps: a step for detecting first information relating to the position of the mark by detecting light from the mark under first measurement conditions; a step for detecting second information relating to the position of the mark by detecting light from the mark under second measurement conditions which differ from the first measurement conditions; and a step for detecting the position of the mark based on the first and second information, thereby providing a high-precision position detecting method and device serving as an alignment or overlaying detection device in an exposure apparatuses used in manufacturing semiconductor devices, wherein position detection precision is not lost even in the event that the alignment marks are not symmetrical or there are irregularities in the non-symmetry of multiple alignment marks within the same wafer.
Abstract:
A measurement method for measuring a distortion of a projection optical system that projects a pattern, used by an exposure apparatus that exposes the reticle pattern onto an object to be exposed, the measurement method includes the steps of a first exposing step for exposing a mark pattern onto the object to be exposed, the mark pattern having a mark on or near an optical axis of the projection optical system and a mark beside the optical axis, and being arranged at a position of the reticle, a second exposing step for only exposing a mark on or near the optical axis of the projection optical system in the mark pattern, measuring step for measuring a shape of the mark formed on the object to be exposed via the first and second exposing steps, and calculating step for calculating the distortion of the projection optical system from the shape of the mark measured by the measuring step.
Abstract:
Disclosed is an interferometer that enables high-speed and high-precision measurement of a surface shape of an article and a method of producing such interferometer. Also disclosed is a method of measuring a surface shape of an article by use of such interferometer. The interferometer includes an optical system having an optical element being effective to make, into an aspherical wave, a wavefront of light to be projected on the article to be inspected, and also being arranged to be replaceable by another optical element.