摘要:
An imaging optical system for imaging a pattern of an object plane onto an image plane includes a first imaging optical system for imaging at a first imaging position, the first imaging optical system having a magnification α in a vacuum atmosphere, and a second imaging optical system for imaging at a second imaging position, the second imaging optical system having a magnification β in the vacuum atmosphere, wherein when an environment in which the imaging optical system is placed changes from the vacuum atmosphere to an air atmosphere or vise versa, a direction of the first imaging position that moves along an optical axis is opposite to a direction of the second imaging position that moves along the optical axis.
摘要:
At least one exemplary embodiment is directed to an exposure apparatus which includes a chamber, an evacuating device configured to evacuate the chamber, a sensor configured to measure at least any one of the position and the height of a substrate, and a cover for hermetically sealing at least part of the sensor.
摘要:
At least one exemplary embodiment is directed to an exposure apparatus which includes a chamber, an evacuating device configured to evacuate the chamber, a sensor configured to measure at least any one of the position and the height of a substrate, and a cover for hermetically sealing at least part of the sensor.
摘要:
A method for producing a library includes the steps of calculating a plurality of conditions for a reflection light from a periodic pattern by changing the sectional shape of the periodic pattern, a condition of an incident light which is emitted to the periodic pattern, an optical constant of a material which forms the periodic pattern, relating a plurality of the libraries to the plurality of the reflection light's conditions, and the optical constant corresponding to the plurality of the reflection light's conditions respectively.
摘要:
An alignment apparatus for aligning a reflective reticle includes a light source for emitting alignment light, an optical alignment mark provided on the reticle, and a reference mark provided on a reticle stage that holds the reticle. A detecting unit detects the alignment light reflected from the alignment mark and the reference mark, and the reticle is aligned on the basis of the result of detection by the detection unit.
摘要:
A reticle stage reference mark 3 of material having high reflectivity to alignment illumination light is provided on a reticle 5, and a chuck mark 8 of material having high reflectivity to the alignment illumination light is provided on a wafer chuck 11. A relative position of the reticle stage reference mark 3 to the chuck mark 8 is detected by using a first position detection optical system 1 and a first illumination optical system 2, and relative alignment is performed between the reticle 5 and a wafer 10.
摘要:
An exposure apparatus performs AGA measurement by using a predetermined sample shot group formed on a wafer, and decides an alignment parameter. The exposure apparatus executes wafer alignment processing and exposure processing by using the alignment parameter. The exposure apparatus notifies a central processing unit of AGA measurement results and the alignment parameter. An overlay inspection apparatus measures an actual exposure position on the exposed wafer, and notifies the central processing unit of the measurement result. The central processing unit optimizes alignment processing on the basis of the AGA measurement results, alignment parameter, and actually measured exposure position.
摘要:
An exposure apparatus performs AGA measurement by using a predetermined sample shot group formed on a wafer, and decides an alignment parameter. The exposure apparatus executes wafer alignment processing and exposure processing by using the alignment parameter. The exposure apparatus notifies a central processing unit (4) of AGA measurement results and the alignment parameter. An overlay inspection apparatus measures an actual exposure position on the exposed wafer, and notifies the central processing unit of the measurement result. The central processing unit (4) optimizes alignment processing on the basis of the AGA measurement results, alignment parameter, and actually measured exposure position.
摘要:
A method for calculating an offset of an exposure dose and a focus position in an exposure apparatus that exposes a substrate via an original includes the steps of obtaining information of a shape of a pattern formed on the substrate using the exposure apparatus, calculating a shift amount between a critical dimension contained in the information of the shape of the pattern and a reference value of the critical dimension, and calculating an offset of the focus position based on the information of the shape of the pattern, and calculating the offset of the exposure dose based on the shift amount and the offset of the focus position.
摘要:
An imprint apparatus, comprising a first holder for holding a mold having an imprint pattern; a second holder for holding a workpiece to which the imprint pattern is transferred; a first illumination system for irradiating a mark for determining a position of the mold and a mark for determining a position of the workpiece with light; a first and second optical systems for imaging the marks for the mold and workpiece at a first and second observation points respectively; an imaging optical system; a first and second image pick-up devices for observing the marks for the mold and workpiece respectively; and at least one of a first drive mechanism for moving the first image pick-up device while following movement of the first observation point and a second drive mechanism for moving the second image pick-up device while following movement of the second observation point.