摘要:
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
摘要:
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
摘要:
A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1
摘要:
Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1
摘要:
A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要:
A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要:
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
摘要:
The present invention provides a catalyst substance that is stable and performs well in the synthesis of ammonia, one of the most important chemical substances for fertilizer ingredients and the like. The catalyst substance exhibits catalytic activity under mild synthesis conditions not requiring high pressure, and is also advantageous from a resource perspective. Further provided is a method for producing the same. This catalyst comprises a supported metal catalyst that is supported on a mayenite type compound including conduction electrons of 1015 cm−3 or more and serving as a support for the ammonia synthesis catalyst. The mayenite type compound used as the support may take any form, including that of powder, a porous material, a sintered body, a thin-film, or a single crystal. Use of this catalyst makes it possible to increase the electron donating ability toward a transition metal.
摘要:
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
摘要:
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.