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    SEMICONDUCTOR LASER
    53.
    发明申请
    SEMICONDUCTOR LASER 有权
    半导体激光器

    公开(公告)号：US20130195136A1

    公开(公告)日：2013-08-01

    申请号：US13565008

    申请日：2012-08-02

    申请人： Shigeyuki Takagi ,  Hidehiko Yabuhara ,  Akira Maekawa ,  Takayoshi Fujii ,  Yasutomo Shiomi

    发明人： Shigeyuki Takagi ,  Hidehiko Yabuhara ,  Akira Maekawa ,  Takayoshi Fujii ,  Yasutomo Shiomi

    IPC分类号： H01S5/20

    CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S1/00 ,  H01S5/12 ,  H01S5/2022 ,  H01S5/2031 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/3425 ,  H01S5/34333 ,  H01S2301/166 ,  H01S2301/176

    摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

    摘要翻译： 半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域 通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率 低于构成活性层的所有层的折射率。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    54.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光装置及制造半导体发光装置的方法

    公开(公告)号：US20120012874A1

    公开(公告)日：2012-01-19

    申请号：US13180889

    申请日：2011-07-12

    申请人： Tomoko MORIOKA ,  Takayoshi Fujii ,  Toshitake Kitagawa ,  Kazufumi Shiozawa ,  Taisuke Sato ,  Hidefumi Yasuda ,  Yuko Kato

    发明人： Tomoko MORIOKA ,  Takayoshi Fujii ,  Toshitake Kitagawa ,  Kazufumi Shiozawa ,  Taisuke Sato ,  Hidefumi Yasuda ,  Yuko Kato

    IPC分类号： H01L33/60 ,  H01L33/20

    CPC分类号： H01L33/20 ,  H01L33/38

    摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

    摘要翻译： 根据一个实施例，半导体发光器件包括衬底，第一半导体层，发光层，第二半导体层和透光性电极。 基板包括沿着第一主表面的周边设置的第一区域和设置在从第一区域观察的第一主表面的中心侧的第二区域。 第一半导体层设置在基板的第一主表面上。 发光层设置在第一半导体层上。 第二半导体层设置在发光层上。 半透明电极设置在第二半导体层上。 第二区域的反射率高于第一区域的反射率。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    55.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20110215370A1

    公开(公告)日：2011-09-08

    申请号：US12873753

    申请日：2010-09-01

    申请人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

    发明人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

    IPC分类号： H01L33/26

    CPC分类号： H01L33/20 ,  H01L33/46

    摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

    摘要翻译： 根据一个实施例，提供了具有高光提取效率的半导体发光器件。 半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。 并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

    Piezoelectric driven type vibratory feeder
    56.
    发明授权
    Piezoelectric driven type vibratory feeder 失效
    压电式振动给料机

    公开(公告)号：US06753640B2

    公开(公告)日：2004-06-22

    申请号：US10115239

    申请日：2002-04-04

    申请人： Kazumichi Kato ,  Takayoshi Fujii ,  Nobuhiro Saito ,  Yuushi Sato ,  Tetsuyuki Kimura ,  Yasushi Muragishi

    发明人： Kazumichi Kato ,  Takayoshi Fujii ,  Nobuhiro Saito ,  Yuushi Sato ,  Tetsuyuki Kimura ,  Yasushi Muragishi

    IPC分类号： H01L4108

    CPC分类号： B65G27/26 ,  B65G27/08 ,  B65G27/24

    摘要： A piezoelectric driven type vibratory feeder having a working mass member that vibrates stably over an entire area of the working mass member is disclosed. The piezoelectric driven type vibratory feeder includes a base, a plurality of first plate springs, with a lower end portion of each of the plurality of first plate springs being secured to the base. A working mass member connected to an upper end portion of each of the plurality of first plate springs and supported at the base to enable the working mass member to vibrate. The piezoelectric feeder also includes a plurality of second plate springs, a piezoelectric device bonded to at least one surface of each of the plurality of second plate springs. An alternating voltage is applied to each piezoelectric device whereby each second plate spring undergoes bending vibration and causes the working mass member to vibrate so that an object is transported on the working mass member.

    摘要翻译： 公开了一种压电驱动式振动给料器，其具有在工作质量部件的整个区域上稳定地振动的工作质量部件。 所述压电驱动型振动给料机包括基座，多个第一板簧，所述多个第一板簧中的每一个的下端部固定在所述基座上。 连接到所述多个第一板簧中的每一个的上端部并且被支撑在所述基座处以使所述工作质量构件振动的工作质量构件。 压电馈电器还包括多个第二板簧，压电装置接合到多个第二板簧中的每一个的至少一个表面上。 对每个压电装置施加交流电压，由此每个第二板簧遭受弯曲振动，并使工作质量构件振动，使得物体在工作质量构件上传送。

    Pyrometallurgical smelting method of copper
    57.
    发明授权
    Pyrometallurgical smelting method of copper 失效
    铜的冶金冶炼方法

    公开(公告)号：US5912401A

    公开(公告)日：1999-06-15

    申请号：US863661

    申请日：1997-05-27

    申请人： Takayoshi Fujii ,  Susumu Akagi ,  Yutaka Yasuda ,  Yoshiaki Suzuki

    发明人： Takayoshi Fujii ,  Susumu Akagi ,  Yutaka Yasuda ,  Yoshiaki Suzuki

    IPC分类号： C22B15/00 ,  C22B15/02

    CPC分类号： C22B15/0047 ,  C22B15/0032

    摘要： In a pyrometallurgical smelting method of copper, the copper-ore and auxiliary fuel, such as carbonaceous material, is blown through an ore-concentrate burner into a reaction shaft. In an improved pyrometallurgical smelting of copper, the carbonaceous material is used to reduce the Fe.sub.3 O.sub.4 contained in the slag. The present invention provides an improved method for reducing the Fe.sub.3 O.sub.4 even in a case at a decreased amount of auxiliary fuel is to be decreased. The carbonaceous material is blown into a lower portion of the reaction shaft where the oxygen partial pressure is low.

    摘要翻译： 在铜的火法冶炼方法中，将铜矿石和辅助燃料（例如碳质材料）通过精矿燃烧器吹入反应轴。 在铜的改进的火法冶炼中，碳质材料用于还原炉渣中所含的Fe 3 O 4。 本发明提供了减少Fe 3 O 4的改进方法，即使在减少辅助燃料量的情况下也是如此。 碳质材料被吹入氧分压低的反应轴的下部。

    Method for pyrometallurgical smelting of copper
    58.
    发明授权
    Method for pyrometallurgical smelting of copper 失效
    铜冶金冶炼方法

    公开(公告)号：US5662730A

    公开(公告)日：1997-09-02

    申请号：US567839

    申请日：1995-12-06

    申请人： Susumu Akagi ,  Takayoshi Fujii ,  Masatoshi Maeda ,  Yoshiaki Suzuki

    发明人： Susumu Akagi ,  Takayoshi Fujii ,  Masatoshi Maeda ,  Yoshiaki Suzuki

    IPC分类号： C22B15/00

    CPC分类号： C22B15/0047

    摘要： In a flash smelting method of copper, a carbonaceous material, whose grain size is under 100 um and is in a proportion of 65% or more, and whose grain size is from 44 to 100 .mu.m and is in a proportion of 25% or more, and which has 80% or more of a fixed carbon content, is charged into a reaction shaft of a flash smelting furnace. It is possible to prevent the excessive formation and excessive reduction of Fe.sub.3 O.sub.4 in the slag. Copper loss, erosion of refractories and boiler trouble can be prevented.

    摘要翻译： 以闪光熔炼铜的方式，其粒径为100μm以下，比例为65％以上，粒径为44〜100μm，比例为25％的碳质材料， 更多，并且具有80％或更多的固定碳含量被装入闪蒸熔炉的反应轴中。 可以防止炉渣中Fe3O4的过度形成和过度的还原。 可以防止铜损，耐火材料的腐蚀和锅炉故障。