公开(公告)号：US11250966B2

公开(公告)日：2022-02-15

申请号：US16569676

申请日：2019-09-13

Applicant: Infineon Technologies AG

Inventor： Markus Bina ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: G21G1/06 ,  H01L21/261 ,  C30B31/20 ,  G21G4/02

Abstract: An apparatus for processing a plurality of semiconductor wafers, the apparatus including a spallation chamber, a neutron producing material mounted in the spallation chamber, a neutron moderator, and an irradiation chamber coupled to the spallation chamber, wherein the neutron moderator is disposed between the spallation chamber and the irradiation chamber, wherein the irradiation chamber is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that a first surface of one semiconductor wafer faces a second surface of another semiconductor wafer.

公开(公告)号：US11195695B2

公开(公告)日：2021-12-07

申请号：US16112178

申请日：2018-08-24

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Brugger ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Peter Zupan

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/302 ,  H01J37/304 ,  H01L21/04 ,  H01L29/08 ,  H01L29/16

Abstract: An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

公开(公告)号：US20210013310A1

公开(公告)日：2021-01-14

申请号：US16926695

申请日：2020-07-11

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Romain Esteve ,  Moriz Jelinek ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L29/16 ,  H01L29/06

Abstract: First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.

公开(公告)号：US10529838B2

公开(公告)日：2020-01-07

申请号：US15831247

申请日：2017-12-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Moriz Jelinek ,  Johannes Laven ,  Helmut Oefner ,  Werner Schustereder

IPC: H01L29/739 ,  H01L29/36 ,  H01L29/10 ,  H01L21/324 ,  H01L21/263 ,  H01L21/66

Abstract: A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between the emitter or source terminal and the collector or drain terminal.

公开(公告)号：US20190295848A1

公开(公告)日：2019-09-26

申请号：US16441534

申请日：2019-06-14

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/3213 ,  H01L29/739 ,  H01L29/66 ,  H01L29/40 ,  H01L29/78 ,  H01L21/311

Abstract: A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

公开(公告)号：US10128328B2

公开(公告)日：2018-11-13

申请号：US15793530

申请日：2017-10-25

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Hans Weber ,  Hans-Joachim Schulze ,  Johannes Georg Laven ,  Werner Schustereder

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/36 ,  H01L29/167 ,  H01L29/32 ,  H01L21/225 ,  H01L29/10 ,  H01L29/08 ,  H01L29/872 ,  H01L21/66 ,  H01L21/78 ,  H01L21/265 ,  H01L21/30 ,  H01L29/78 ,  H01L29/739 ,  H01L21/324

Abstract: Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface portion. Information is obtained about a cumulative dopant concentration of dopants, including the hydrogen-related donors, in the surface portion. Based on the information about the cumulative dopant concentration and a dissociation rate of the hydrogen-related donors, a main temperature profile is determined for dissociating a defined portion of the hydrogen-related donors. The semiconductor substrate is subjected to a main heat treatment applying the main temperature profile to obtain, in the surface portion, a final total dopant concentration deviating from a target dopant concentration by not more than 15%.

公开(公告)号：US20180240672A1

公开(公告)日：2018-08-23

申请号：US15961525

申请日：2018-04-24

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L29/10 ,  H01L29/36 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/861

CPC classification number: H01L21/26586 ,  H01L21/26513 ,  H01L21/26593 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6609 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/8613

Abstract: A semiconductor device includes a device doping region of an electrical device arrangement disposed in a semiconductor substrate. A portion of the device doping region has a vertical dimension of more than 500 nm and a doping concentration of greater than 1*1015 dopant atoms per cm3. The doping concentration of the portion of the device doping region varies by less than 20% from a maximum doping concentration in the device doping region.

公开(公告)号：US09972704B2

公开(公告)日：2018-05-15

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L21/263 ,  H01L21/324 ,  H01L29/10 ,  H01L29/36 ,  H01L21/66

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

公开(公告)号：US09960044B2

公开(公告)日：2018-05-01

申请号：US15297914

申请日：2016-10-19

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L29/36 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L21/26586 ,  H01L21/26513 ,  H01L21/26593 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6609 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/8613

Abstract: A method for forming a semiconductor device includes implanting doping ions into a semiconductor substrate. A deviation between a main direction of a doping ion beam implanting the doping ions and a main crystal direction of the semiconductor substrate is less than ±0.5° during the implanting of the doping ions into the semiconductor substrate. The method further includes controlling a temperature of the semiconductor substrate during the implantation of the doping ions so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the doping ions. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. The lower target temperature limit is equal to a target temperature minus 30° C., and the target temperature is higher than 80° C.

公开(公告)号：US20180061644A1

公开(公告)日：2018-03-01

申请号：US15687874

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/28158 ,  H01J2237/30472 ,  H01J2237/3151 ,  H01L21/2652 ,  H01L21/28114 ,  H01L21/31116 ,  H01L21/32136 ,  H01L29/045 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.