Abstract:
Methods are used to develop and evaluate new processes for cleaning and texturing substrates and layers used in HJCS solar cells. In some embodiments, methods are used to develop and evaluate new processes for the deposition of resistive metal oxide interface layers that are formed between the TCO layers and the a-Si:H layers. The resistive metal oxide interface layers form good ohmic contact to the a-Si:H layers. In some embodiments, methods are used to develop and evaluate new processes for the deposition of amorphous TCO layers. The amorphous TCO layers allow improved control over the layer thickness and morphology. In some embodiments, methods are used to develop and evaluate new processes for the deposition of anti-reflection coating materials. The anti-reflection coating materials are selected to decrease the reflectivity of the solar cell and maintain the high conductivity of the TCO materials.
Abstract:
A method for making low emissivity panels, including forming a base layer to promote a seed layer for a conductive silver layer. The base layer can be an amorphous layer or a nanocrystalline layer, which can facilitate zinc oxide seed layer growth, together with smoother surface and improved thermal stability. The base layer can include doped tin oxide, for example, tin oxide doped with Al, Ga, In, Mg, Ca, Sr, Sb, Bi, Ti, V, Y, Zr, Nb, Hf, Ta, or any combination thereof. The doped tin oxide base layer can influence the growth of (002) crystallographic orientation in zinc oxide, which in turn serves as a seed layer template for silver (111).
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A titanium-yttrium oxide layer is deposited above the transparent substrate, or above the transparent substrate and the reflective layer, which may enhance optical performance.
Abstract:
A method for making low emissivity panels, including control the ion characteristics, such as ion energy, ion density and ion to neutral ratio, in a sputter deposition process of a layer deposited on a thin conductive silver layer. The ion control can prevent or minimize degrading the quality of the conductive silver layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved.
Abstract:
A method for forming boron oxide films formed using reactive sputtering. The boron oxide films are candidates as an anti-reflection coating. Boron oxide films with a refractive index of about 1.38 can be formed. The boron oxide films can be formed using power densities between 2 W/cm2 and 11 W/cm2 applied to the target. The oxygen in the reactive sputtering atmosphere can be between 40 volume % and 90 volume %.
Abstract translation:一种用反应溅射形成氧化硼膜的方法。 氧化硼膜是抗反射涂层的候选物。 可以形成折射率为约1.38的氧化硼膜。 可以使用施加到目标的2W / cm 2和11W / cm 2之间的功率密度来形成氧化硼膜。 反应性溅射气氛中的氧可以在40体积%至90体积%之间。
Abstract:
Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
Abstract:
A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include an alloy of a first element having high oxygen affinity with a second element having low oxygen affinity. The first element can include Ta, Nb, Zr, Hf, Mn, Y, Si, and Ti, and the second element can include Ru, Ni, Co, Mo, and W, which can have low oxygen affinity property. The alloy barrier layer can reduce optical absorption in the visible range, can provide color-neutral product, and can improve adhesion to the silver layer.
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A low-e stack is formed above the transparent substrate. Each of the layers of the low-e stack are formed to have a specific thickness to tune the performance characteristics of the low-e panel.
Abstract:
Coated articles are disclosed. The coated articles include a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1. 5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.
Abstract:
Embodiments provided herein describe antireflective coatings and methods for forming antireflective coatings. A substrate is provided. A first antireflective layer is formed over the substrate. The first antireflective layer has a first refractive index. A second antireflective layer is formed on the first antireflective layer. The second antireflective layer has a second refractive index. The first antireflective layer and the second antireflective layer jointly form an antireflective coating. The antireflective coating is graded such that the antireflective coating comprises at least three sub-layers, each of the at least three sub-layers having a unique refractive index.