Abstract:
The absorption properties of both an adhesive layer and an ablation layer are employed to facilitate debonding of a device wafer and a glass handler without damaging the device wafer. The penetration depths of the adhesive and ablation layers are selected such that no more than a negligible amount of the ablation fluence reaches the surface of the device wafer.
Abstract:
A magnetic device according to one embodiment includes a source of flux and a magnetic yoke coupled to the source of flux. The source of flux includes a thin film coil having multiple turns. The magnetic yoke has a pole with two or more gaps, wherein the coil turns have a non-uniform placement in the magnetic yoke for creating a higher magnetic field at one of the gaps than another of the gaps during writing. A magnetic device according to another embodiment includes a source of flux. A geometry of the magnetic pole near or at one of the gaps is different than a geometry of the magnetic pole near or at another of the gaps to help equalize fields formed at the gaps when the source of flux is generating flux.
Abstract:
A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
Abstract:
A semiconductor article which includes a semiconductor base portion including a semiconductor material; a back end of the line (BEOL) wiring portion on the semiconductor base portion and comprising a plurality of wiring layers having metallic wiring and insulating material, said BEOL wiring portion excluding a semiconductor material; and a guard ring in the BEOL wiring portion and surrounding a structure in the semiconductor chip, the guard ring having a zig-zag configuration.
Abstract:
A planar closed-magnetic-loop inductor and a method of fabricating the inductor are described. The inductor includes a first material comprising a cross-sectional shape including at least four segments, at least one of the at least four segments including a first edge and a second edge on opposite sides of an axial line through the at least one of the at least four segments. The first edge and the second edge are not parallel.
Abstract:
Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material. The method further includes lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the viaformed in the substrate. The method further includes filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via.
Abstract:
A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
Abstract:
A method for forming a thin film inductor having yokes, one or more of which is laminated, and one or more conductors passing between the yokes. The laminated yoke or yokes help reduce eddy currents and/or hysteresis losses.
Abstract:
A method comprises performing a pattern recognition process to determine a geometry of a superconducting quantum device comprising one or more Josephson junctions, determining, based on the geometry determined by the pattern recognition process, a laser beam illumination pattern for laser annealing the one or more Josephson junctions of the superconducting quantum device, and configuring a laser microscope to generate the laser beam illumination pattern.
Abstract:
Batteries include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode. The cathode structure includes a cathode substrate, a cathode formed on the cathode substrate, and a cathode conductive liner that is in contact with the cathode. The conductive overcoat is formed over the anode structure and the cathode structure to seal a cavity formed by the anode structure and the cathode structure. At least one of the anode substrate and the cathode substrate is pierced by through vias that are in contact with the respective anode conductive liner or cathode conductive liner.