公开(公告)号：US11791383B2

公开(公告)日：2023-10-17

申请号：US17387504

申请日：2021-07-28

Applicant: Infineon Technologies AG

Inventor： Saurabh Roy ,  Thomas Aichinger ,  Hans-Joachim Schulze

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/51

CPC classification number: H01L29/1608 ,  H01L29/516 ,  H01L29/66053 ,  H01L29/78391

Abstract: A semiconductor device includes a SiC substrate and a plurality of transistor cells formed in the SiC substrate and electrically connected in parallel to form a transistor. Each transistor cell includes a gate structure including a gate electrode and a gate dielectric stack separating the gate electrode from the SiC substrate. The gate dielectric stack includes a ferroelectric insulator. The transistor has a specified operating temperature range, and the ferroelectric insulator is doped with a doping material such that the Curie temperature of the ferroelectric insulator is in a range above the specified operating temperature range of the transistor. A corresponding method of producing the semiconductor device is also described.

公开(公告)号：US11626477B2

公开(公告)日：2023-04-11

申请号：US17375034

申请日：2021-07-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.

公开(公告)号：US20220059659A1

公开(公告)日：2022-02-24

申请号：US17519161

申请日：2021-11-04

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Romain Esteve ,  Ravi Keshav Joshi ,  Shiqin Niu

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

Abstract: A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

公开(公告)号：US11195921B2

公开(公告)日：2021-12-07

申请号：US16412131

申请日：2019-05-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Romain Esteve ,  Ravi Keshav Joshi ,  Shiqin Niu

IPC: H01L29/76 ,  H01L29/16 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes a gate electrode and a gate dielectric. The gate electrode extends from a first surface of a silicon carbide body into the silicon carbide body. The gate dielectric is between the gate electrode and the silicon carbide body. The gate electrode includes a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

公开(公告)号：US20210118986A1

公开(公告)日：2021-04-22

申请号：US17111551

申请日：2020-12-04

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Romain Esteve ,  Florian Grasse ,  Caspar Leendertz ,  Shiqin Niu ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.

公开(公告)号：US20200176580A1

公开(公告)日：2020-06-04

申请号：US16693909

申请日：2019-11-25

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Iris Moder ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Carsten von Koblinski

IPC: H01L29/49 ,  H01L29/16 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/78 ,  H01L21/02 ,  H01L21/04 ,  H01L29/66

Abstract: A silicon carbide device includes a silicon carbide substrate having a body region and a source region of a transistor cell. Further, the silicon carbide device includes a titanium carbide gate electrode of the transistor cell.

公开(公告)号：US20190341447A1

公开(公告)日：2019-11-07

申请号：US16404284

申请日：2019-05-06

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L21/04 ,  H01L29/66 ,  H01L29/16

Abstract: A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.

公开(公告)号：US10393697B2

公开(公告)日：2019-08-27

申请号：US14930295

申请日：2015-11-02

Applicant: Infineon Technologies AG

Inventor： Sabine Gruber ,  Thomas Aichinger ,  Stefan Krivec ,  Thomas Ostermann

IPC: G01N27/447 ,  G01N27/453 ,  G01N27/27 ,  G01N27/414

Abstract: An apparatus for analyzing ion kinetics in a dielectric probe structure includes an ion reservoir abutting the dielectric probe structure and configured to supply mobile ions to the dielectric probe structure, a capacitor structure configured to generate an electric field in the dielectric probe structure along a vertical direction, and an electrode structure configured to generate an electrophoretic force on mobile ions in the dielectric probe structure along a lateral direction. A method for analyzing ion kinetics in the dielectric probe structure of the apparatus is also provided.

公开(公告)号：US20190245075A1

公开(公告)日：2019-08-08

申请号：US16385817

申请日：2019-04-16

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Dethard Peters ,  Ralf Siemieniec

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/16 ,  H01L29/04 ,  H01L29/739 ,  H01L29/423 ,  H01L27/02 ,  H01L27/06

CPC classification number: H01L29/7804 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/861

Abstract: A semiconductor device includes a plurality of gate trenches formed in a first surface of a semiconductor body and extending lengthwise parallel to one another, transistor cells and diode regions formed in a mesa of the semiconductor body between neighboring ones of the gate trenches, and a drift region in the semiconductor body beneath the gate trenches. Each transistor cell includes a source zone and a body region. Each diode region includes a contact portion and a lower doped shielding portion. The source zone forms a first p-n junction with the body region, and the body region forms a second p-n junction with the drift region. The contact region extends to the first surface, and the shielding portion forms a third p-n junction with the drift region. The shielding portion extends under bottoms of the neighboring ones of the gate trenches.

公开(公告)号：US09960243B2

公开(公告)日：2018-05-01

申请号：US15358316

申请日：2016-11-22

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner

IPC: H01L29/51 ,  H01L29/423 ,  H01L29/739 ,  H01L29/16 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/02 ,  H01L21/04 ,  H01L23/00

CPC classification number: H01L29/4236 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/049 ,  H01L21/823462 ,  H01L24/48 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/45099

Abstract: A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. A gate dielectric separates the gate electrode from the semiconductor body. First sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure.