公开(公告)号：US20180358067A1

公开(公告)日：2018-12-13

申请号：US15802827

申请日：2017-11-03

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

公开(公告)号：US10079337B2

公开(公告)日：2018-09-18

申请号：US15403764

申请日：2017-01-11

Applicant: International Business Machines Corporation

Inventor： Matthias G. Gottwald ,  Guohan Hu

IPC: H01L27/00 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/08

Abstract: A double magnetic tunnel junction (DMTJ) device includes a fixed reference layer of a first magnetic material having a perpendicular magnetic anisotropy with a magnetic moment that is fixed. The device also includes a free layer of a second magnetic material having a perpendicular magnetic anisotropy with a magnetic moment that is changeable based on a current. A dynamic reference layer of a third magnetic material has an in-plane magnetic anisotropy and a changeable magnetic moment. The free layer is disposed between the fixed reference layer and the dynamic reference layer.

公开(公告)号：US20170338404A1

公开(公告)日：2017-11-23

申请号：US15157834

申请日：2016-05-18

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Jung-Hyuk Lee ,  Jeong-Heon Park

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L43/10

Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer and a magnetic free layer, and forming a metal oxide cap layer on the MTJ structure, wherein forming the metal oxide cap layer comprises depositing a metal layer on the magnetic free layer, performing an oxidation of the deposited metal layer to form an oxidized metal layer, and depositing a metal oxide layer on the oxidized metal layer.

公开(公告)号：US20170294575A1

公开(公告)日：2017-10-12

申请号：US15094052

申请日：2016-04-08

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Junghyuk Lee ,  Jeong-Heon Park

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

Abstract: Techniques relate to forming a semiconductor device. A magnetic pinned layer is formed adjacent to a tunnel barrier layer. A magnetic free layer is formed adjacent to the tunnel barrier layer, such that the tunnel barrier layer is sandwiched between the magnetic pinned layer and the magnetic free layer. The magnetic free layer includes a first magnetic layer, a second magnetic layer disposed on top of the first magnetic layer, and a third magnetic layer disposed on top of the second magnetic layer. The second magnetic layer of the magnetic free layer includes an additional material, and the additional material is a selection of at least one of Be, Mg, Al, Ca, B, C, Si, V, Cr, Ti, and Mn.

公开(公告)号：US09773971B2

公开(公告)日：2017-09-26

申请号：US15254107

申请日：2016-09-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01F10/32 ,  H01F41/32 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

公开(公告)号：US20160343936A1

公开(公告)日：2016-11-24

申请号：US15229811

申请日：2016-08-05

Applicant: International Business Machines Corporation ,  Industrial Technology Research Institute

Inventor： Guohan Hu ,  Cheng-Wei Chien

IPC: H01L43/08 ,  G11C19/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

公开(公告)号：US09472754B2

公开(公告)日：2016-10-18

申请号：US15062725

申请日：2016-03-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L29/96 ,  H01L43/12 ,  H01L27/105 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/1052 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

Abstract: Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

Abstract translation: 实施例涉及包括由垂直磁各向异性（PMA）参考层和界面参考层形成的参考层的磁性隧道结（MTJ）存储单元。 MTJ还包括位于界面参考层和自由层之间的自由层和隧道屏障。 隧道势垒被配置为使得电子能够穿过界面参考层和自由层之间的隧道势垒。 在隧道势垒的隧道阻挡栅格结构和界面参考层的界面参考层晶格结构之间提供了第一原位对准。 在隧道势垒的隧道势垒晶格结构和自由层的自由层晶格结构之间提供第二原位对准。 PMA参考层晶格结构不与界面参考层晶格结构对齐。

公开(公告)号：US20160190437A1

公开(公告)日：2016-06-30

申请号：US15062725

申请日：2016-03-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01L27/1052 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

Abstract: Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

Abstract translation: 实施例涉及包括由垂直磁各向异性（PMA）参考层和界面参考层形成的参考层的磁性隧道结（MTJ）存储单元。 MTJ还包括位于界面参考层和自由层之间的自由层和隧道屏障。 隧道势垒被配置为使得电子能够穿过界面参考层和自由层之间的隧道势垒。 在隧道势垒的隧道阻挡栅格结构和界面参考层的界面参考层晶格结构之间提供了第一原位对准。 在隧道势垒的隧道势垒晶格结构和自由层的自由层晶格结构之间提供第二原位对准。 PMA参考层晶格结构不与界面参考层晶格结构对齐。

公开(公告)号：US20160163966A1

公开(公告)日：2016-06-09

申请号：US14561690

申请日：2014-12-05

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Luqiao Liu ,  Jonathan Z. Sun ,  Daniel C. Worledge

IPC: H01L43/10 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-containing layers oriented in a stack, wherein adjacent Co-containing layers in the stack are separated by an Ir-containing layer such that the adjacent Co-containing layers in the stack are anti-parallel coupled by the Ir-containing layer therebetween; and a free magnetic layer separated from the reference magnetic layer by a barrier layer. A method of writing data to a magnetic random access memory device having at least one of the present magnetic memory cells is also provided.

Abstract translation: 提供具有基于Co和Ir的反铁磁参考层的磁存储器件。 在一个方面，磁存储器件包括具有定向在堆叠中的多个含Co层的参考磁性层，其中堆叠中相邻的含Co层被含Ir层分开，使得相邻的含Co层在 堆叠通过其间的含Ir层反平行耦合; 以及通过阻挡层与参考磁性层分离的自由磁性层。 还提供了将数据写入具有至少一个本磁存储单元的磁随机存取存储器件的方法。

公开(公告)号：US09087543B2

公开(公告)日：2015-07-21

申请号：US13911609

申请日：2013-06-06

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel Worledge

IPC: G11C11/16 ,  G11B5/84 ,  G11B5/62 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11B5/8404 ,  G11B5/62 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/12

Abstract: A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer.

Abstract translation: 为具有垂直磁各向异性的结构提供了一种机制。 设置底部氧化物层，并且磁性层邻近底部氧化物层设置。 磁性层包含铁，并垂直于磁性层的平面被磁化。 顶部氧化物层邻近磁性层设置。