公开(公告)号：US20100131868A1

公开(公告)日：2010-05-27

申请号：US12323903

申请日：2008-11-26

申请人： Jitendra P. Chawla ,  Zheng Yuan

发明人： Jitendra P. Chawla ,  Zheng Yuan

IPC分类号： G06F3/048

CPC分类号： G06F3/0481 ,  G06F3/044 ,  H04L12/1822

摘要： In one embodiment, an application sharing session may be established between a presenter device and one or more viewer devices, and at least one application window may be generated on the presenter device that is to be shared with the one or more viewer devices. At the presenter device, a determination may be made regarding which one or more predefined areas of the application window are to be limitedly shared. Accordingly, the application window may be shared with the one or more viewer devices, while limiting sharing of the one or more predefined areas of the application window.

摘要翻译： 在一个实施例中，可以在演示器设备和一个或多个观看者设备之间建立应用共享会话，并且可以在要与一个或多个观看者设备共享的演示设备上生成至少一个应用窗口。 在演示装置中，可以确定应用窗口的哪一个或多个预定义区域将被有限地共享。 因此，应用程序窗口可以与一个或多个查看器设备共享，同时限制应用程序窗口的一个或多个预定义区域的共享。

公开(公告)号：US07459405B2

公开(公告)日：2008-12-02

申请号：US11493211

申请日：2006-07-25

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/26

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US07456116B2

公开(公告)日：2008-11-25

申请号：US11018381

申请日：2004-12-20

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

摘要翻译： 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

公开(公告)号：US20070288569A1

公开(公告)日：2007-12-13

申请号：US11753169

申请日：2007-05-24

申请人： Zheng Yuan ,  David Knight ,  Rohit Deep

发明人： Zheng Yuan ,  David Knight ,  Rohit Deep

IPC分类号： G06F15/16

CPC分类号： H04L67/22 ,  H04L67/14 ,  H04L67/148

摘要： In one embodiment, the systems and methods attend a collaboration session; detect content shared during the collaboration session; automatically record the content and a time stamp corresponding to the content; and play at least a portion of the content during the collaboration session.

摘要翻译： 在一个实施例中，系统和方法参与协作会话; 检测协作会话共享的内容; 自动记录与内容对应的内容和时间戳; 并在协作会话期间播放内容的至少一部分。

公开(公告)号：US07208425B2

公开(公告)日：2007-04-24

申请号：US11367866

申请日：2006-03-03

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US20070000897A1

公开(公告)日：2007-01-04

申请号：US11423651

申请日：2006-06-12

申请人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

发明人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

IPC分类号： H01L21/324 ,  H05B3/00

CPC分类号： H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

摘要翻译： 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US20060264062A1

公开(公告)日：2006-11-23

申请号：US11493211

申请日：2006-07-25

申请人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

公开(公告)号：US07130883B2

公开(公告)日：2006-10-31

申请号：US09751424

申请日：2000-12-29

申请人： Min Zhu ,  Jian Shen ,  Steven Li ,  Guanghong Yang ,  Bin Zhao ,  Shi Yan ,  Zheng Yuan

发明人： Min Zhu ,  Jian Shen ,  Steven Li ,  Guanghong Yang ,  Bin Zhao ,  Shi Yan ,  Zheng Yuan

IPC分类号： G06F13/00

CPC分类号： H04L12/1827 ,  H04L67/1095 ,  H04L69/329 ,  H04L69/40

摘要： A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer is connected or any other server in the system. As a result, the system and method of the present invention is easily scalable to support an arbitrary number of participants to a conference by merely adding the appropriate number of server computers to the system. In addition, by replicating the conference information on more than one server computer, the single point of failure limitation is eliminated. In fact, if a server hosting or participating in a conference malfunctions, the failure is detected by other server computers and the client computer is able to reconnect to the conference through a new server computer.

公开(公告)号：US07037859B2

公开(公告)日：2006-05-02

申请号：US10979471

申请日：2004-11-01

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US06793733B2

公开(公告)日：2004-09-21

申请号：US10057280

申请日：2002-01-25

申请人： Karthik Janakiraman ,  Nitin Ingle ,  Zheng Yuan ,  Steven Gianoulakis

发明人： Karthik Janakiraman ,  Nitin Ingle ,  Zheng Yuan ,  Steven Gianoulakis

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.

摘要翻译： 用于半导体制造工艺的气体分配喷头具有面板，该面板具有细长狭槽或通道形式的气体出口。 根据本发明的实施例，使用细长的气体出口端口基本上减少了喷头与晶片紧密隔开的沉积材料的不期望的斑点和条纹的发生。 还公开了一种具有锥形轮廓的面板的喷头，以在近距离的盘对晶片间隔处减小沉积材料的边缘厚度。