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    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    51.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20110003407A1

    公开(公告)日：2011-01-06

    申请号：US12882449

    申请日：2010-09-15

    申请人： Chang Yeon Kim ,  Yeo Jin Yoon

    发明人： Chang Yeon Kim ,  Yeo Jin Yoon

    IPC分类号： H01L33/00

    CPC分类号： H01L33/24 ,  H01L33/14

    摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

    摘要翻译： 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

    LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING
    52.
    发明申请
    LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING 有权
    具有电流扩展电极的发光二极管

    公开(公告)号：US20100044744A1

    公开(公告)日：2010-02-25

    申请号：US12442267

    申请日：2006-09-25

    申请人： Dae Won Kim ,  Yeo Jin Yoon

    发明人： Dae Won Kim ,  Yeo Jin Yoon

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20

    摘要： Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.

    摘要翻译： 公开了一种具有用于改善电流扩展的电极延伸的发光二极管。 发光二极管包括形成在基板上的下半导体层，上半导体层和有源层。 上半导体层位于下半导体层之上，使得下半导体层的边缘区域被暴露，并且具有从与基板的角部相邻的边缘区域中的顺时针或逆时针方向的位置与对角线方向平行缩进的凹口 以暴露下半导体层。 凹痕的远端彼此间隔开。 同时，在与半导体层的第一角对应的下半导体层的露出区上形成下电极，在半导体层上的透明电极层上形成上电极。 在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。 在透明电极层上形成从上部电极延伸的上延伸部。 下延伸和上延伸改善电流扩散，特别是在具有大面积的发光二极管中。

    LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    53.
    发明申请
    LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20100012969A1

    公开(公告)日：2010-01-21

    申请号：US12518846

    申请日：2007-12-12

    申请人： Yeo Jin Yoon ,  Chang Yeon Kim

    发明人： Yeo Jin Yoon ,  Chang Yeon Kim

    IPC分类号： H01L33/00 ,  H01L21/302 ,  H01L21/28

    CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

    摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer

    摘要翻译： 提供了制造垂直发光二极管的方法。 该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述多个沟槽中以与所述高掺杂的第一导电半导体层欧姆接触

    Light emitting diode
    55.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08896011B2

    公开(公告)日：2014-11-25

    申请号：US12050873

    申请日：2008-03-18

    申请人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

    发明人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62

    CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

    摘要翻译： 根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。

    Ac light emitting device having photonic crystal structure and method of fabricating the same
    57.
    发明授权
    Ac light emitting device having photonic crystal structure and method of fabricating the same 有权
    具有光子晶体结构的Ac发光器件及其制造方法

    公开(公告)号：US08716727B2

    公开(公告)日：2014-05-06

    申请号：US12065063

    申请日：2006-09-06

    申请人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    发明人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0753 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

    摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

    摘要翻译： 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外，在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。 此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

    Light emitting diode for AC operation
    60.
    发明授权
    Light emitting diode for AC operation 有权
    用于交流操作的发光二极管

    公开(公告)号：US08232565B2

    公开(公告)日：2012-07-31

    申请号：US12607644

    申请日：2009-10-28

    申请人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

    发明人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

    IPC分类号： H01L33/00

    CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48 ,  H05B33/0821

    摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

    摘要翻译： 本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。 每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子 波发光单元。 此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元 串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。