利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

87 条记录 (耗时 0.063 秒)

    Patterned substrate for light emitting diode and light emitting diode employing the same
    5.
    发明授权
    Patterned substrate for light emitting diode and light emitting diode employing the same 有权
    用于发光二极管的图案衬底和采用其的发光二极管

    公开(公告)号：US08614458B2

    公开(公告)日：2013-12-24

    申请号：US12090050

    申请日：2006-11-28

    申请人： Yeo Jin Yoon ,  Won Cheol Seo

    发明人： Yeo Jin Yoon ,  Won Cheol Seo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/005 ,  H01L33/22

    摘要： Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

    摘要翻译： 本文公开了用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。

    Light emitting diode and method for manufacturing the same
    8.
    发明授权
    Light emitting diode and method for manufacturing the same 有权
    发光二极管及其制造方法

    公开(公告)号：US08049229B2

    公开(公告)日：2011-11-01

    申请号：US12173383

    申请日：2008-07-15

    申请人： Yeo Jin Yoon

    发明人： Yeo Jin Yoon

    IPC分类号： H01L33/06

    CPC分类号： H01L33/385 ,  H01L24/14 ,  H01L27/15 ,  H01L33/44 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/05599

    摘要： A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.

    摘要翻译： 发光二极管包括与有源层并联电连接的电流泄漏通道，以更好地保护发光二极管免受静电。 发光二极管包括衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，有源层上的p型半导体层，p型p型半导体层， 型半导体层和由n型半导体层形成的n电极，通过蚀刻暴露于p型半导体层的一部分。

    AC light emitting diode having improved transparent electrode structure
    9.
    发明授权
    AC light emitting diode having improved transparent electrode structure 有权
    交流发光二极管具有改善的透明电极结构

    公开(公告)号：US07994523B2

    公开(公告)日：2011-08-09

    申请号：US12088999

    申请日：2006-11-28

    申请人： Jae Ho Lee ,  Yeo Jin Yoon

    发明人： Jae Ho Lee ,  Yeo Jin Yoon

    IPC分类号： H01L33/00

    CPC分类号： H01L27/153 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48

    摘要： Disclosed is an AC light emitting diode having an improved transparent electrode structure. The light emitting diode comprises a plurality of light emitting cells formed on a single substrate, each of the light emitting cells having a first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. A transparent electrode structure is positioned on each of the light emitting cells. The transparent electrode structure includes at least two portions separated from each other, or a center portion and branches laterally extending from both sides of the center portion. Meanwhile, wires electrically connect adjacent two of the light emitting cells. Accordingly, a plurality of light emitting cells are electrically connected, whereby a light emitting diode can be provided which can be driven under AC power source. Also, an improved transparent electrode structure is employed, so that the current density can be prevented from being locally increased.

    摘要翻译： 公开了具有改进的透明电极结构的AC发光二极管。 发光二极管包括形成在单个基板上的多个发光单元，每个发光单元具有第一导电型半导体层，位于第一导电型半导体层的一个区域上的第二导电型半导体层，以及 插入在第一和第二导电类型半导体层之间的有源层。 透明电极结构位于每个发光单元上。 透明电极结构包括彼此分离的至少两个部分或中心部分，并且从中心部分的两侧侧向延伸。 同时，电线电连接相邻的两个发光单元。 因此，多个发光单体电连接，从而可以提供可在交流电源下驱动的发光二极管。 此外，采用改进的透明电极结构，从而可以防止电流密度局部增加。

    Light emitting device and method of manufacturing the same
    10.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US07977691B2

    公开(公告)日：2011-07-12

    申请号：US12630370

    申请日：2009-12-03

    申请人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

    发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

    IPC分类号： H01L27/15

    CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

    摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

    摘要翻译： 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。