公开(公告)号：US08048749B2

公开(公告)日：2011-11-01

申请号：US12178356

申请日：2008-07-23

申请人： Tomokazu Yokoi ,  Atsuo Isobe ,  Motomu Kurata ,  Takeshi Shichi ,  Daisuke Ohgarane ,  Takashi Shingu

发明人： Tomokazu Yokoi ,  Atsuo Isobe ,  Motomu Kurata ,  Takeshi Shichi ,  Daisuke Ohgarane ,  Takashi Shingu

IPC分类号： H01L21/336

CPC分类号： H01L29/66765

摘要： A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region).

摘要翻译： 一种制造半导体器件的方法，通过该方法可以以简单的方法制造具有改善的S值的底栅极薄膜晶体管和具有比源极区和漏极区更小的厚度的沟道形成区。 在对应于沟道形成区域的部分的绝缘基板的表面上形成岛状导电膜，并且被绝缘膜覆盖以形成突出部。 在沉积非晶半导体膜以覆盖突出部分之后，用激光照射非晶半导体膜以使其熔化并结晶。 突出部分上的熔融半导体的一部分流入与突出部分的两侧相邻的区域，这导致半导体膜在突出部分（沟道形成区域）上的厚度减小。

公开(公告)号：US07977680B2

公开(公告)日：2011-07-12

申请号：US12170588

申请日：2008-07-10

申请人： Tatsuya Arao ,  Atsuo Isobe ,  Toru Takayama

发明人： Tatsuya Arao ,  Atsuo Isobe ,  Toru Takayama

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L35/24

CPC分类号： G02F1/133305 ,  G02F1/1362 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/66742 ,  H01L29/78603

摘要： In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.

摘要翻译： 在具有金属表面的基板的半导体器件中，形成在具有金属表面的基板上的绝缘膜和形成在绝缘膜上的像素单元; 像素单元包括TFT和与TFT连接的布线，并且存储电容器由具有金属表面的基板（11），绝缘膜（12）和布线（21）构成。 由于绝缘膜更薄，并且随着绝缘膜和布线接触的区域的面积较大，所以存储电容器具有较大的容量。

公开(公告)号：US07923778B2

公开(公告)日：2011-04-12

申请号：US11876429

申请日：2007-10-22

申请人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H02L27/14 ,  H01L27/88

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with beat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供给贱金属膜的节拍，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US20110049588A1

公开(公告)日：2011-03-03

申请号：US12857820

申请日：2010-08-17

申请人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

发明人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14643 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.

摘要翻译： 所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。 所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。 提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。 光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

公开(公告)号：US07867873B2

公开(公告)日：2011-01-11

申请号：US12213037

申请日：2008-06-13

申请人： Satoshi Murakami ,  Hiromichi Godo ,  Atsuo Isobe

发明人： Satoshi Murakami ,  Hiromichi Godo ,  Atsuo Isobe

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： A method of manufacturing a semiconductor substrate is demonstrated, which enables the formation of a single crystal semiconductor layer on a substrate having an insulating surface. The manufacturing method includes the steps of: ion irradiation of a surface of a single-crystal semiconductor substrate to form a damaged region; laser light irradiation of the single-crystal semiconductor substrate; formation of an insulating layer on the surface of the single-crystal semiconductor substrate; bonding the insulating layer with a substrate having an insulating surface; separation of the single-crystal semiconductor substrate at the damaged region, resulting in a thin single-crystal semiconductor layer on the surface of the substrate having the insulating surface; and laser light irradiation of the surface of the single-crystal semiconductor layer which is formed on the substrate having the insulating surface. This method allows the production of a thin layer of a single-crystal semiconductor with uniformed characteristics on an insulating surface.

摘要翻译： 证明了制造半导体衬底的方法，其能够在具有绝缘表面的衬底上形成单晶半导体层。 该制造方法包括以下步骤：离子照射单晶半导体衬底的表面以形成受损区域; 单晶半导体衬底的激光照射; 在单晶半导体衬底的表面上形成绝缘层; 将绝缘层与具有绝缘表面的基板接合; 在损伤区域分离单晶半导体衬底，在具有绝缘表面的衬底的表面上形成薄的单晶半导体层; 以及在具有绝缘表面的基板上形成的单晶半导体层的表面的激光照射。 该方法允许在绝缘表面上制造具有均匀特性的单晶半导体薄层。

公开(公告)号：US20100230754A1

公开(公告)日：2010-09-16

申请号：US12721298

申请日：2010-03-10

申请人： Atsuo Isobe ,  Hiromichi Godo ,  Satoshi Shinohara

发明人： Atsuo Isobe ,  Hiromichi Godo ,  Satoshi Shinohara

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1218 ,  H01L29/66772

摘要： An object is to provide a semiconductor device which solves a problem that can occur when a substrate having an insulating surface is used. The semiconductor device includes a base substrate having an insulating surface; a conductive layer over the insulating surface; an insulating layer over the conductive layer; a semiconductor layer having a channel formation region, a first impurity region, a second impurity region, and a third impurity region provided between the channel formation region and the second impurity region over the insulating layer; a gate insulating layer configured to cover the semiconductor layer; a gate electrode over the gate insulating layer; a first electrode electrically connected to the first impurity region; and a second electrode electrically connected to the second impurity region. The conductive layer is held at a given potential.

摘要翻译： 本发明的目的是提供一种半导体器件，其解决了当使用具有绝缘表面的衬底时可能发生的问题。 半导体器件包括具有绝缘表面的基底衬底; 绝缘表面上的导电层; 导电层上的绝缘层; 绝缘层上设置有沟道形成区域和第二杂质区域之间的具有沟道形成区域，第一杂质区域，第二杂质区域和第三杂质区域的半导体层; 构造成覆盖半导体层的栅极绝缘层; 栅绝缘层上的栅电极; 电连接到第一杂质区的第一电极; 以及与第二杂质区电连接的第二电极。 导电层保持在给定的电位。

公开(公告)号：US07718547B2

公开(公告)日：2010-05-18

申请号：US12334589

申请日：2008-12-15

申请人： Atsuo Isobe ,  Satoshi Murakami ,  Tamae Takano ,  Shunpei Yamazaki

发明人： Atsuo Isobe ,  Satoshi Murakami ,  Tamae Takano ,  Shunpei Yamazaki

IPC分类号： H01L21/31

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L27/1248 ,  H01L29/42384

摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.

摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上形成第一绝缘膜，在第一绝缘膜上形成半导体膜，通过对半导体膜进行等离子体处理来对半导体膜进行氧化或氮化 使用高频波，电子密度为1×10 11 cm -3以上且1×10 13 cm -3以下且电子温度为0.5eV以上1.5eV以下的条件，形成第2绝缘膜 覆盖半导体膜，在第二绝缘膜上形成栅电极，形成第三绝缘膜以覆盖栅电极，并在第三绝缘膜上形成导电膜。

公开(公告)号：US07635883B2

公开(公告)日：2009-12-22

申请号：US11514973

申请日：2006-09-05

申请人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

发明人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC分类号： H01L31/062

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

摘要翻译： 一种制造半导体器件的方法，具有在具有绝缘表面的衬底上形成非晶半导体的步骤; 图案化非晶半导体以形成多个第一岛状半导体; 在相对扫描基板的同时，在多个第一岛状半导体上照射线性聚集的激光束，从而使多个第一岛状半导体结晶; 图案化已经结晶以形成多个第二岛状半导体的多个第一岛状半导体; 使用多个第二岛状半导体形成多个晶体管; 并且使用预定数量的晶体管形成单位电路，其中用于预定数量的晶体管的第二岛状半导体由彼此不同的第一岛状半导体形成。

公开(公告)号：US07504663B2

公开(公告)日：2009-03-17

申请号：US11136705

申请日：2005-05-25

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

IPC分类号： H01L29/786 ,  H01L29/788

CPC分类号： H01L27/127 ,  H01L24/32 ,  H01L24/73 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1214 ,  H01L27/13 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014

摘要： The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.

摘要翻译： 本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。 本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。 此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。 根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

公开(公告)号：US20090004822A1

公开(公告)日：2009-01-01

申请号：US12213037

申请日：2008-06-13

申请人： Satoshi Murakami ,  Hiromichi Godo ,  Atsuo Isobe

发明人： Satoshi Murakami ,  Hiromichi Godo ,  Atsuo Isobe

IPC分类号： H01L21/265 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： A method of manufacturing a semiconductor substrate is demonstrated, which enables the formation of a single crystal semiconductor layer on a substrate having an insulating surface. The manufacturing method includes the steps of: ion irradiation of a surface of a single-crystal semiconductor substrate to form a damaged region; laser light irradiation of the single-crystal semiconductor substrate; formation of an insulating layer on the surface of the single-crystal semiconductor substrate; bonding the insulating layer with a substrate having an insulating surface; separation of the single-crystal semiconductor substrate at the damaged region, resulting in a thin single-crystal semiconductor layer on the surface of the substrate having the insulating surface; and laser light irradiation of the surface of the single-crystal semiconductor layer which is formed on the substrate having the insulating surface. This method allows the production of a thin layer of a single-crystal semiconductor with uniformed characteristics on an insulating surface.

摘要翻译： 证明了制造半导体衬底的方法，其能够在具有绝缘表面的衬底上形成单晶半导体层。 该制造方法包括以下步骤：离子照射单晶半导体衬底的表面以形成受损区域; 单晶半导体衬底的激光照射; 在单晶半导体衬底的表面上形成绝缘层; 将绝缘层与具有绝缘表面的基板接合; 在损伤区域分离单晶半导体衬底，在具有绝缘表面的衬底的表面上形成薄的单晶半导体层; 以及在具有绝缘表面的基板上形成的单晶半导体层的表面的激光照射。 该方法允许在绝缘表面上制造具有均匀特性的单晶半导体薄层。