公开(公告)号：US09860466B2

公开(公告)日：2018-01-02

申请号：US15153543

申请日：2016-05-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: G01N21/00 ,  H04N5/3722 ,  G01N21/956

CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

公开(公告)号：US09818887B2

公开(公告)日：2017-11-14

申请号：US15182200

申请日：2016-06-14

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

公开(公告)号：US20170295334A1

公开(公告)日：2017-10-12

申请号：US15337604

申请日：2016-10-28

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H04N5/378 ,  G01N21/95 ,  H01L27/148 ,  H04N5/372 ,  G06T7/00

CPC classification number: H04N5/378 ,  G01N21/9501 ,  G06T7/0008 ,  G06T2207/30148 ,  H01L27/14812 ,  H01L27/14825 ,  H04N5/361 ,  H04N5/372

Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

公开(公告)号：US20170048467A1

公开(公告)日：2017-02-16

申请号：US15210056

申请日：2016-07-14

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  Devis Contarato ,  John Fielden ,  Daniel I. Kavaldjiev ,  Guoheng Zhao ,  Jehn-Huar Chern ,  Guowu Zheng ,  Donald W. Pettibone ,  Stephen Biellak

IPC: H04N5/335 ,  G01N21/95 ,  G06T7/00

CPC classification number: H04N5/335 ,  G01N21/9501 ,  G01N2021/95676 ,  H04N5/2256 ,  H04N5/347 ,  H04N5/3745 ,  H04N5/3765 ,  H04N5/378

Abstract: An inspection system and methods in which analog image data values (charges) captured by an image sensor are binned (combined) before or while being transmitted as output signals on the image sensor's output sensing nodes (floating diffusions), and in which an ADC is controlled to sequentially generate multiple corresponding digital image data values between each reset of the output sensing nodes. According to an output binning method, the image sensor is driven to sequentially transfer multiple charges onto the output sensing nodes between each reset, and the ADC is controlled to convert the incrementally increasing output signal after each charge is transferred onto the output sensing node. According to a multi-sampling method, multiple charges are vertically or horizontally binned (summed/combined) before being transferred onto the output sensing node, and the ADC samples each corresponding output signal multiple times. The output binning and multi-sampling methods may be combined.

Abstract translation: 一种检查系统和方法，其中由图像传感器捕获的模拟图像数据值（电荷）在作为图像传感器的输出感测节点（浮动扩散）之间的输出信号被发送之前或同时被分组（组合），并且其中ADC是 被控制以在输出感测节点的每个复位之间顺序地生成多个对应的数字图像数据值。 根据输出合并方法，驱动图像传感器以在每个复位之间顺序地将多个电荷传送到输出感测节点上，并且在每个电荷被传送到输出感测节点之后，控制ADC转换递增增加的输出信号。 根据多采样方法，在转移到输出感测节点之前，将多个电荷垂直或水平分类（相加/组合），并且ADC对每个对应的输出信号进行多次采样。 可以组合输出合并和多采样方法。

公开(公告)号：US20160334342A1

公开(公告)日：2016-11-17

申请号：US15153543

申请日：2016-05-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: G01N21/95

CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

Abstract translation: 通过对像素的电阻控制栅极的中心区域施加更多的负的控制电压，并对栅极的端部施加更多的正的控制电压来实现线性传感器中的像素孔径尺寸调整。 这些控制电压使得电阻控制栅极产生将在像素的感光区域的选定部分中产生的光电子驱动到用于后续测量的电荷累积区域中的电场，并驱动在像素的光敏区域的其他部分中产生的光电子 从电荷累积区域进行随后的丢弃或同时读出。 系统利用光学器件将从不同角度或不同位置接收的光引导到每个像素的光敏区域的相应不同部分。 选择性地启动多个孔径控制电极以收集/测量从窄范围或宽范围的角度或位置接收的光，从而实现快速的图像数据调整。

公开(公告)号：US09496425B2

公开(公告)日：2016-11-15

申请号：US13792166

申请日：2013-03-10

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract translation: 用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

公开(公告)号：US09478402B2

公开(公告)日：2016-10-25

申请号：US14198175

申请日：2014-03-05

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

IPC: H01L31/11 ,  H01L31/167 ,  H01J40/06 ,  H01L31/103 ,  H01J43/08

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：US08748828B2

公开(公告)日：2014-06-10

申请号：US13622155

申请日：2012-09-18

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Guowu Zheng ,  Yung-Ho Chuang ,  Venkatraman Iyer

IPC: G01T1/20

CPC classification number: H01L27/14636 ,  G01N21/9501 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14806 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/19105 ,  H04N5/3355 ,  H04N5/369 ,  H05K13/00 ,  Y10T29/49117

Abstract: The present invention includes an interposer disposed on a surface of a substrate, a light sensing array sensor disposed on the interposer, the light sensing array sensor being back-thinned and configured for back illumination, the light sensing array sensor including columns of pixels, one or more amplification circuitry elements configured to amplify an output of the light sensing array sensor, the amplification circuits being operatively connected to the interposer, one or more analog-to-digital conversion circuitry elements configured to convert an output of the light sensing array sensor to a digital signal, the ADC circuitry elements being operatively connected to the interposer, one or more driver circuitry elements configured to drive a clock or control signal of the array sensor, the interposer configured to electrically couple at least two of the light sensing array sensor, the amplification circuits, the conversion circuits, the driver circuits, or one or more additional circuits.

Abstract translation: 本发明包括设置在基板的表面上的插入器，设置在插入件上的光感测阵列传感器，光感测阵列传感器被背面薄化并被配置为用于背光照明，光感测阵列传感器包括像素列，一 或多个放大电路元件，被配置为放大光感测阵列传感器的输出，放大电路可操作地连接到插入器，一个或多个模拟 - 数字转换电路元件，被配置为将光感测阵列传感器的输出转换成 数字信号，所述ADC电路元件可操作地连接到所述插入器，配置成驱动所述阵列传感器的时钟或控制信号的一个或多个驱动器电路元件，所述插入器被配置为电耦合所述光感测阵列传感器中的至少两个， 放大电路，转换电路，驱动器电路或一个或多个附加电路 电话

公开(公告)号：US20140043463A1

公开(公告)日：2014-02-13

申请号：US14058061

申请日：2013-10-18

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Chuang

IPC: H04N7/18

CPC classification number: H04N7/18 ,  G01N21/9501 ,  G01N2021/8887 ,  G01N2021/95676 ,  H04N5/3694 ,  H04N5/372

Abstract: An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage.

Abstract translation: 用于检查晶片/掩模/掩模版的表面的检查系统可以包括模块阵列。 模块化阵列可以包括多个时间延迟积分（TDI）传感器模块，每个TDI传感器模块具有TDI传感器和用于驱动和处理TDI传感器的多个局部电路。 至少一个局部电路可以控制与TDI传感器相关的时钟。 可以使用至少一个光管来将源照明分配给多个TDI传感器模块。 多个TDI传感器模块可以被定位成捕获相同的检查区域或不同的检查区域。 多个TDI传感器模块可以相同或提供不同的集成阶段。 可以设置模块的间隔，以便在一次通过中提供100％的检查区域覆盖，或者为了完全覆盖而需要两次或更多次通过的分数覆盖。