Apparatus and method for inspecting sample surface
    51.
    发明授权
    Apparatus and method for inspecting sample surface 有权
    用于检查样品表面的装置和方法

    公开(公告)号:US07952071B2

    公开(公告)日:2011-05-31

    申请号:US12162071

    申请日:2007-01-24

    IPC分类号: G01N23/00

    摘要: Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

    摘要翻译: 提供了在半导体器件的制造工艺中使用的缺陷检查装置中,现有技术不能提供高精度的缺陷检查装置和检查(或评价)方法。 提供一种用投影型电子束检查装置检查样品表面的方法,包括以下步骤:通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射,从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

    APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE
    52.
    发明申请
    APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE 有权
    检测样品表面的装置和方法

    公开(公告)号:US20090026368A1

    公开(公告)日:2009-01-29

    申请号:US12162071

    申请日:2007-01-24

    IPC分类号: G01N23/00

    摘要: Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

    摘要翻译: 提供了在半导体器件的制造工艺中使用的缺陷检查装置中,现有技术不能提供高精度的缺陷检查装置和检查(或评价)方法。 提供一种用投影型电子束检查装置检查样品表面的方法,包括以下步骤:通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射,从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

    Electron beam apparatus and device manufacturing method using same
    58.
    发明授权
    Electron beam apparatus and device manufacturing method using same 有权
    电子束装置及其制造方法

    公开(公告)号:US06909092B2

    公开(公告)日:2005-06-21

    申请号:US10437889

    申请日:2003-05-15

    摘要: A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.

    摘要翻译: 提供了一种缺陷检查装置,用于产生较小失真的测试图像,以可靠地观察用于检测缺陷的样品表面。 缺陷检测装置包括用于照射样品的一次电子束源,用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜,用于检测二次电子的检测器,以及用于处理的图像处理单元 来自检测器的信号。 此外,可以提供第二电子源用于发射照射到样品的电子束,其中在用来自第一电子源的一次电子束照射之前,可以用来自第二电子源的电子束照射样品,用于观察 例子。 还提供了一种装置制造方法,用于使用缺陷检测装置以高吞吐量检查处理装置。

    Method and apparatus for repairing shape, and method for manufacturing semiconductor device using those
    59.
    发明申请
    Method and apparatus for repairing shape, and method for manufacturing semiconductor device using those 审中-公开
    用于修复形状的方法和装置,以及使用这些方法制造半导体器件的方法

    公开(公告)号:US20070192057A1

    公开(公告)日:2007-08-16

    申请号:US11783793

    申请日:2007-04-12

    IPC分类号: G01B15/00

    摘要: The invention relates to a method for enabling repair of a defect in a substrate, particularly the invention provides a method and apparatus for enabling repair of a pattern shape in a semiconductor device, which has not been able to be practiced because of lack of a suitable method, and further provides a method for manufacturing the semiconductor device using those. A method for repairing the pattern shape of a substrate having an imperfect pattern is used, which includes (a) a step for inspecting the substrate and thus detecting the imperfect pattern, and (b) a step for repairing the pattern shape by performing etching or deposition to the detected imperfect-pattern using radiation rays. Moreover, apparatus for repairing a pattern shape of a via-hole in a wafer having an imperfect via-hole is used, which has a defect inspection section for detecting the imperfect via-hole, and an etching section for etching the imperfect via-hole using a fast atom beam.

    摘要翻译: 本发明涉及能够修复基板中的缺陷的方法,特别是本发明提供一种能够修复半导体器件中的图案形状的方法和装置,其由于缺乏合适的方式而无法实践 方法,并且还提供了使用这些方法制造半导体器件的方法。 使用修复具有不完美图案的基板的图案形状的方法,其包括(a)检查基板并因此检测不完美图案的步骤,以及(b)通过进行蚀刻来修复图案形状的步骤 使用辐射线沉积到检测到的不完美图案。 此外,使用在具有不良通孔的晶片中修复通孔的图案形状的装置,其具有用于检测不良通孔的缺陷检查部和用于蚀刻不完美通孔的蚀刻部 使用快速原子束。