公开(公告)号：US08241948B2

公开(公告)日：2012-08-14

申请号：US12792816

申请日：2010-06-03

申请人： Gen Fujii

发明人： Gen Fujii

IPC分类号： H01L21/00

CPC分类号： H01L21/288 ,  C23C18/1216 ,  C23C18/14 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1893 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908

摘要： The manufacturing method of the present invention includes steps of selectively forming a photocatalyst material or a material including an amino group by discharging a composition including the photocatalyst material or the material including an amino group; immersing the photocatalyst material or the material including an amino group in a solution including a plating catalyst material so as to adsorb or deposit the plating catalyst material onto the photocatalyst material or the material including an amino group; and immersing the plating catalyst material in a plating solution including a metal material so as to form a metal film on a surface of the photocatalyst material or the material including an amino group adsorbing or depositing the plating catalyst material, thereby manufacturing a semiconductor device. The pH of the solution including the plating catalyst material is adjusted in a range of 3 to 6.

摘要翻译： 本发明的制造方法包括通过排出包含光催化剂材料的组合物或包含氨基的材料来选择性地形成光催化剂材料或包含氨基的材料的步骤; 将光催化剂材料或包含氨基的材料浸入包括镀催化剂材料的溶液中以将镀催化剂材料吸附或沉积到光催化剂材料或包含氨基的材料上; 以及将镀催化剂材料浸渍在包含金属材料的镀液中，以在光催化剂材料的表面上形成金属膜，或者包含吸附或沉积镀催化剂材料的氨基的材料，从而制造半导体器件。 包括电镀催化剂材料的溶液的pH调节在3至6的范围内。

公开(公告)号：US08173519B2

公开(公告)日：2012-05-08

申请号：US11709126

申请日：2007-02-22

申请人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

发明人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133711 ,  G02F1/133734 ,  G02F1/133784 ,  G02F1/13394 ,  G02F1/167 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L27/3272 ,  H01L29/78603 ,  H01L29/78633 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/1896 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

摘要翻译： 一种制造半导体器件的方法包括：在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后，将元件形成层与具有透光性的基板分离。

公开(公告)号：US08098361B2

公开(公告)日：2012-01-17

申请号：US12258866

申请日：2008-10-27

申请人： Erika Takahashi ,  Gen Fujii ,  Shuji Fukai ,  Takeshi Nishi

发明人： Erika Takahashi ,  Gen Fujii ,  Shuji Fukai ,  Takeshi Nishi

IPC分类号： G02F1/1333

CPC分类号： G02F1/13394 ,  G02F1/13392 ,  G02F2202/28

摘要： To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.

摘要翻译： 为了在液晶显示装置中更准确地控制间隔物的定位，以防止由于在显示区域中的不正确定位而引起的显示缺陷。 提供具有更高图像质量和可靠性的液晶显示装置，并且提供一种以高产量制造液晶显示装置的方法。 在液晶显示装置中，为了降低相对于其中分散有球形间隔物的液体的润湿性，对排出球形间隔物的区域进行拒水处理。 液体（液滴）不会在液体排斥区域上扩散，并且在将球形间隔物朝向液体的中心移动的同时被干燥。 因此，可以通过在干燥液体的同时移动球形间隔物来校正由于液体中的失控而引起的放电后不正确的定位。

公开(公告)号：US08053780B2

公开(公告)日：2011-11-08

申请号：US10577057

申请日：2004-11-05

申请人： Yohei Kanno ,  Gen Fujii

发明人： Yohei Kanno ,  Gen Fujii

IPC分类号： H01L31/036 ,  G02F1/1333

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78696

摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.

摘要翻译： 在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。 这导致过程数量和材料数量的增加。 根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺， 因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

公开(公告)号：US08053171B2

公开(公告)日：2011-11-08

申请号：US11025921

申请日：2005-01-03

申请人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

发明人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

IPC分类号： H01L21/00

CPC分类号： G02B5/201 ,  G03F7/0007 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3281 ,  H01L27/3295 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.

摘要翻译： 本发明通过简单的步骤提供了具有包括绝缘膜，半导体膜，导电膜等的膜图案的基板的制造方法，以及低成本，高生产率的半导体器件的制造方法， 产量。 根据本发明，在形成在基材上具有低润湿性的第一保护膜之后，在第一掩模图案的外边缘上施加或排出具有高润湿性的材料，从而形成膜图案和具有膜图案的基板 形成。

公开(公告)号：US07859187B2

公开(公告)日：2010-12-28

申请号：US10576495

申请日：2004-11-05

申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Gen Fujii ,  Hideaki Kuwabara ,  Yuko Tachimura

发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Gen Fujii ,  Hideaki Kuwabara ,  Yuko Tachimura

IPC分类号： H01J1/62 ,  H01J9/24

CPC分类号： H01L27/12 ,  H01L27/1292 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78696

摘要： It is an object of the invention to provide a display device which can be manufactured by a simplified manufacturing process by which the efficiency in the use of material is improved. It is a further object of the invention to provide a manufacturing method of the display device. It is another object of the invention to provide a fabrication technology for improving adhesion of a pattern. In view of the above problems, according to the present invention, a pattern is formed by a droplet discharge method. Particularly in the invention, base pretreatment is performed before/after a pattern is formed by a droplet discharge method. As a result of such base pretreatment, adhesion of a pattern can improved, and the pattern may be made finer.

摘要翻译： 本发明的目的是提供一种显示装置，其可以通过简化的制造工艺制造，通过该制造工艺提高了材料使用的效率。 本发明的另一个目的是提供一种显示装置的制造方法。 本发明的另一个目的是提供一种用于改进图案粘附的制造技术。 鉴于上述问题，根据本发明，通过液滴喷射法形成图案。 特别是在本发明中，在通过液滴喷射法形成图案之前/之后进行基础预处理。 作为这种基底预处理的结果，可以提高图案的粘附性，并且可以使图案更细。

公开(公告)号：US07795616B2

公开(公告)日：2010-09-14

申请号：US10576420

申请日：2004-11-05

申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Gen Fujii ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Gen Fujii ,  Hideaki Kuwabara

IPC分类号： H01L31/00

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13415 ,  G02F2001/136295 ,  H01L27/1292

摘要： As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern.

摘要翻译： 由于重复膜形成和蚀刻，衬底越来越大，制造时间增加; 蚀刻剂等的废物处理成本增加; 材料效率显着降低。 在本发明中形成了用于改善基板和通过液滴喷射方法形成的材料层之间的粘附性的基膜。 此外，根据本发明的液晶显示装置的制造方法包括至少一个步骤，用于形成在不使用光掩模的情况下制造液晶显示装置所需的以下图案：以布线为代表的材料层的图案（或 电极）图案，绝缘层图案; 或用于形成另一图案的掩模图案。

公开(公告)号：US07510905B2

公开(公告)日：2009-03-31

申请号：US11043451

申请日：2005-01-27

申请人： Gen Fujii ,  Hiroko Shiroguchi

发明人： Gen Fujii ,  Hiroko Shiroguchi

IPC分类号： H01L21/44

CPC分类号： H01L29/42384 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765

摘要： When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.

摘要翻译： 当通过半导体器件的常规制造步骤形成接触孔时，需要在基板的几乎整个表面上形成抗蚀剂，以便施加在除了要形成接触孔的区域之外的膜上 ，导致吞吐量大幅降低。 根据本发明的接触孔的形成方法和半导体装置的制造方法，EL显示装置和液晶显示装置，在半导体层，导电层或导电层上选择性地形成岛状有机膜 绝缘层，并且在岛状有机膜周围形成绝缘膜以形成接触孔。 因此，不需要使用抗蚀剂的常规图案，可以实现高生产率和低成本。

公开(公告)号：US07449372B2

公开(公告)日：2008-11-11

申请号：US11295471

申请日：2005-12-07

申请人： Gen Fujii ,  Masafumi Morisue ,  Hironobu Shoji ,  Junya Maruyama ,  Kouji Dairiki ,  Tomoyuki Aoki

发明人： Gen Fujii ,  Masafumi Morisue ,  Hironobu Shoji ,  Junya Maruyama ,  Kouji Dairiki ,  Tomoyuki Aoki

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  H01L23/48 ,  H01L23/5227 ,  H01L24/11 ,  H01L27/0629 ,  H01L27/1266 ,  H01L27/1292 ,  H01L27/13 ,  H01L28/10 ,  H01L29/78621 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/00014 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.

摘要翻译： 具有导电层的基板的制造方法具有以下步骤：在基板上形成无机绝缘层; 在无机绝缘层上形成具有所需形状的有机树脂层; 在无机绝缘层的第一暴露部分上相对于含有导电颗粒的组合物形成低润湿性层; 去除有机树脂层; 并用含有导电颗粒的组合物涂覆无机绝缘层的第二暴露部分并进行烘烤，由此形成导电层。

公开(公告)号：US20080099878A1

公开(公告)日：2008-05-01

申请号：US11884016

申请日：2006-02-07

申请人： Mikio Yukawa ,  Gen Fujii ,  Hironobu Shoji

发明人： Mikio Yukawa ,  Gen Fujii ,  Hironobu Shoji

IPC分类号： H01L29/66 ,  H01L21/44

CPC分类号： G11C13/0014 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/283

摘要： It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.

摘要翻译： 本发明的目的是提供一种高性能和高可靠性的半导体器件，并且以高成本提供低成本制造半导体器件的技术。 半导体器件通过以下步骤制造：形成第一导电层，在第一导电层上形成第一液体排斥层，在第一拒液层上排出含有掩模层的材料的组合物以形成掩模层， 使用掩模层处理第一液体排斥层，形成第二疏液层，在第一导电层和第二导电层上形成绝缘层，并在绝缘层上形成第二导电层。