公开(公告)号：US20070207571A1

公开(公告)日：2007-09-06

申请号：US11709126

申请日：2007-02-22

申请人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

发明人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133711 ,  G02F1/133734 ,  G02F1/133784 ,  G02F1/13394 ,  G02F1/167 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L27/3272 ,  H01L29/78603 ,  H01L29/78633 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/1896 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

摘要翻译： 一种制造半导体器件的方法包括：在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后，将元件形成层与具有透光性的基板分离。

公开(公告)号：US09419142B2

公开(公告)日：2016-08-16

申请号：US13431073

申请日：2012-03-27

申请人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

发明人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

IPC分类号： H01L29/786 ,  G02F1/167 ,  H01L27/12 ,  H01L31/0392 ,  H01L51/00 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133711 ,  G02F1/133734 ,  G02F1/133784 ,  G02F1/13394 ,  G02F1/167 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L27/3272 ,  H01L29/78603 ,  H01L29/78633 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/1896 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

摘要翻译： 一种制造半导体器件的方法包括：在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后，将元件形成层与具有透光性的基板分离。

公开(公告)号：US08173519B2

公开(公告)日：2012-05-08

申请号：US11709126

申请日：2007-02-22

申请人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

发明人： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133711 ,  G02F1/133734 ,  G02F1/133784 ,  G02F1/13394 ,  G02F1/167 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L27/3272 ,  H01L29/78603 ,  H01L29/78633 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/1896 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

摘要翻译： 一种制造半导体器件的方法包括：在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后，将元件形成层与具有透光性的基板分离。

公开(公告)号：US08823023B2

公开(公告)日：2014-09-02

申请号：US13542693

申请日：2012-07-06

申请人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

发明人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L27/12

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US08222116B2

公开(公告)日：2012-07-17

申请号：US11705828

申请日：2007-02-14

申请人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

发明人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US20070295973A1

公开(公告)日：2007-12-27

申请号：US11705828

申请日：2007-02-14

申请人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

发明人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US09012949B2

公开(公告)日：2015-04-21

申请号：US13543715

申请日：2012-07-06

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Hideto Ohnuma ,  Hajime Kimura ,  Yasuhiro Jinbo

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Hideto Ohnuma ,  Hajime Kimura ,  Yasuhiro Jinbo

IPC分类号： H01L33/36 ,  H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5246 ,  G02F1/133514 ,  G02F1/133603 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/322 ,  H01L27/3246 ,  H01L51/0096 ,  H01L51/524 ,  H01L51/5253 ,  H01L2251/5315

摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.

摘要翻译： 提供了高度可靠的发光模块或发光装置。 提供一种用于制造高度可靠的发光模块的方法。 发光模块在第一基板和第二基板之间包括设置在第一基板上的第一电极，设置在第一电极上的第二电极，其间插入有发光有机化合物的层，牺牲层 使用设置在第二电极上的液体材料形成。

公开(公告)号：US20130009194A1

公开(公告)日：2013-01-10

申请号：US13543715

申请日：2012-07-06

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Hideto Ohnuma ,  Hajime Kimura ,  Yasuhiro Jinbo

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Hideto Ohnuma ,  Hajime Kimura ,  Yasuhiro Jinbo

IPC分类号： H01L33/36 ,  H01L33/52

CPC分类号： H01L51/5246 ,  G02F1/133514 ,  G02F1/133603 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/322 ,  H01L27/3246 ,  H01L51/0096 ,  H01L51/524 ,  H01L51/5253 ,  H01L2251/5315

摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.

公开(公告)号：US09054206B2

公开(公告)日：2015-06-09

申请号：US12222109

申请日：2008-08-01

申请人： Shunpei Yamazaki ,  Sachiaki Teduka ,  Satoshi Toriumi ,  Makoto Foruno ,  Yasuhiro Jinbo ,  Koji Dairiki ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Sachiaki Teduka ,  Satoshi Toriumi ,  Makoto Foruno ,  Yasuhiro Jinbo ,  Koji Dairiki ,  Hideaki Kuwabara

IPC分类号： H01L21/84 ,  H01L29/786 ,  H01L29/04 ,  H01L29/417 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/67 ,  H01L27/12

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67207 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.

公开(公告)号：US09048327B2

公开(公告)日：2015-06-02

申请号：US13355340

申请日：2012-01-20

申请人： Tetsuhiro Tanaka ,  Takashi Ienaga ,  Ryu Komatsu ,  Erika Kato ,  Ryota Tajima ,  Yasuhiro Jinbo

发明人： Tetsuhiro Tanaka ,  Takashi Ienaga ,  Ryu Komatsu ,  Erika Kato ,  Ryota Tajima ,  Yasuhiro Jinbo

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/78678

摘要： An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.

摘要翻译： 本发明的一个实施方案是具有大于或等于70nm且小于或等于100nm的厚度的微晶半导体膜，并且包括从微晶半导体膜的表面部分地突出的晶粒。 晶粒具有取向平面，并且包括尺寸为13nm以上的微晶。 此外，微晶半导体膜的膜密度高于或等于2.25g / cm 3，低于或等于2.35g / cm 3，优选高于或等于2.30g / cm 3，低于或等于2.33g / cm3。